WO2017109835A1 - Procédé de fabrication de cellule solaire - Google Patents

Procédé de fabrication de cellule solaire Download PDF

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Publication number
WO2017109835A1
WO2017109835A1 PCT/JP2015/085706 JP2015085706W WO2017109835A1 WO 2017109835 A1 WO2017109835 A1 WO 2017109835A1 JP 2015085706 W JP2015085706 W JP 2015085706W WO 2017109835 A1 WO2017109835 A1 WO 2017109835A1
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WO
WIPO (PCT)
Prior art keywords
type
type side
diffusion layer
paste
forming
Prior art date
Application number
PCT/JP2015/085706
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English (en)
Japanese (ja)
Inventor
隼人 幸畑
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2015/085706 priority Critical patent/WO2017109835A1/fr
Priority to JP2017557536A priority patent/JP6509376B2/ja
Priority to TW105139420A priority patent/TWI622182B/zh
Publication of WO2017109835A1 publication Critical patent/WO2017109835A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a method for manufacturing a solar cell that converts light energy into electric power.
  • Patent Document 1 In order to convert light energy into electric power with high efficiency, a double-sided light-receiving solar cell having an n-type silicon wafer is proposed in Patent Document 1.
  • the emitter In a solar cell having an n-type silicon wafer, the emitter is a p-type diffusion layer.
  • the concentration of impurities in the p-type diffusion layer is 5 ⁇ 10 19 (atoms / cm 3 ) or less.
  • the p-type side electrode that is in contact with the p-type diffusion layer is formed of an alloy of silver and aluminum. It's not easy. If the contact between the p-type diffusion layer and the p-type side electrode is insufficient, the conversion efficiency decreases.
  • the present invention has been made in view of the above, and an object of the present invention is to obtain a method for manufacturing a solar cell in which the contact between the p-type diffusion layer having a low impurity concentration and the p-type side electrode is high.
  • the present invention includes a step of forming a p-type diffusion layer on one side of an n-type silicon wafer, and silver on the outside of the p-type diffusion layer.
  • the present invention there is an effect that it is possible to obtain a method for manufacturing a solar cell with high contact between the p-type diffusion layer having a low impurity concentration and the p-type side electrode.
  • FIG. 1 The flowchart which shows the outline of the procedure of the manufacturing method of the solar cell of Embodiment 1.
  • FIG. The figure which shows the relationship between time at the time of performing a baking process, and baking temperature
  • FIG. 1 is a flowchart showing an outline of the procedure of the method for manufacturing the solar cell of the first embodiment.
  • an n-type silicon wafer is prepared (S1).
  • a p-type diffusion layer is formed on one side of the silicon wafer (S2).
  • a doping paste containing n-type component impurities is pasted by printing (S3).
  • the p-type diffusion layer is covered with a protective film.
  • the silicon wafer is heated to diffuse the n-type component impurities contained in the doping paste to the other surface side of the silicon wafer. Thereby, an n-type diffusion layer is formed on the other surface side of the silicon wafer (S4).
  • the p-type diffusion layer is covered with the p-type side passivation film, and the n-type diffusion layer is covered with the n-type side passivation film (S5).
  • a p-type side paste for forming a p-type side electrode is provided on the p-type side passivation film by printing, and an n-type side for forming an n-type side electrode on the n-type side passivation film.
  • a paste is provided by printing (S6).
  • the p-type side paste and the n-type side paste are baked (S7), and the p-type side electrode is formed from the p-type side paste and the n-type side electrode is formed from the n-type side paste.
  • FIG. 2 is a diagram for explaining the manufacturing method of solar cell 20 of Embodiment 1 in more detail. Furthermore, FIG. 2 has shown the cross section of the thing in the middle of manufacture of the solar cell 20 about each of several processes in the manufacturing method of the solar cell 20, or the cross section of the thing after completion
  • an n-type silicon wafer 1 is prepared.
  • irregularities are formed on both surfaces of the silicon wafer 1.
  • the silicon wafer 1 is etched with a solution composed of an alkaline solution and an additive.
  • an alkaline solution is a potassium hydroxide solution or a sodium hydroxide solution.
  • An example of an additive is isopropyl alcohol. Note that in FIG. 2A, the unevenness is not shown for easy explanation.
  • a p-type diffusion layer 2 is formed on one side of the silicon wafer 1.
  • the p-type diffusion layer 2 is formed by any one of the vapor phase diffusion method, the solid phase diffusion method, and the ion implantation method.
  • a pn junction is formed.
  • the impurity concentration in the p-type diffusion layer 2 is 5 ⁇ 10 19 (atoms / cm 3 ) or less.
  • the lower limit of the impurity concentration in the p-type diffusion layer 2 is 1 ⁇ 10 18 (atoms / cm 3 ).
  • An example of the impurity in the p-type diffusion layer 2 is a boron atom.
  • the surface of the silicon wafer 1 where the p-type diffusion layer 2 is not formed that is, the other surface of the silicon wafer 1 contains n-type component impurities.
  • the doping paste 3 is pasted by printing.
  • An example of an n-type component impurity is a phosphorus atom.
  • the p-type diffusion layer 2 is covered with a protective film. Note that in FIG. 2C, a protective film is not shown for easy explanation.
  • the silicon wafer 1 is put into a thermal diffusion furnace, the silicon wafer 1 is heated while introducing an impurity gas into the thermal diffusion furnace, and the n-type component impurities contained in the doping paste 3 are removed from the other surface of the silicon wafer 1.
  • the n-type diffusion layer 4 is formed on the other surface side of the silicon wafer 1.
  • the portion of the n-type diffusion layer 4 that has been in contact with the doping paste 3 is a high-concentration n-type diffusion layer 5 in which the concentration of the impurity of the n-type component is higher than the periphery of the portion.
  • the n-type diffusion layer 4 may be formed by a method other than the method using the doping paste 3.
  • An example of the impurity in the n-type diffusion layer 4 is a phosphorus atom.
  • the p-type diffusion layer 2 is covered with the p-type side passivation film 6 and the n-type diffusion layer 4 is covered with the n-type side passivation film 7.
  • the p-type side passivation film 6 is a film made of aluminum oxide, silicon dioxide, or silicon nitride.
  • a p-type side paste 8 made of silver and aluminum is formed on the side opposite to the side where the p-type diffusion layer 2 is located with reference to the p-type side passivation film 6. Is provided by printing. That is, the p-type side paste 8 composed of silver and aluminum is provided outside the p-type diffusion layer 2.
  • an n-type side paste 9 made of silver is provided by printing on the side opposite to the side where the n-type diffusion layer 4 is located with respect to the n-type side passivation film 7. That is, the n-type side paste 9 made of silver is provided outside the n-type diffusion layer 4.
  • the firing object 10 is fired to form the p-type side electrode 11 from the p-type side paste 8 and the n-type side electrode 12 from the n-type side paste 9 as shown in FIG. To do.
  • the manufacture of the solar cell 20 ends.
  • the temperature is within a range from 550 ° C to 700 ° C.
  • the p-type side paste 8 and the n-type side paste 9 are fired over a period of 20 seconds or more at a temperature within a range of 20 ° C. above and below the reference temperature from either reference.
  • the p-type side paste 8 and the n-type side paste 9 are baked at a constant temperature in the range of 550 ° C. to 700 ° C. for a period of 20 seconds or longer.
  • the constant temperature is a temperature within a band of 20 ° C. above and below the reference from any temperature.
  • the p-type side electrode 11 in contact with the p-type diffusion layer 2 is formed from the p-type side paste 8.
  • the p-type side paste 8 is baked at a constant temperature within a range from 550 ° C. to 700 ° C. over a period of 20 seconds or longer as described above.
  • the period during which the temperature is maintained is 60 seconds or less.
  • the firing object 10 is heated so that the temperature of the firing object 10 exceeds 700 ° C. That is, the firing object 10 is fired to form the n-type side electrode 12 at a temperature higher than the temperature at which the p-type side electrode 11 is formed from the p-type side paste 8. Thereby, the n-type side electrode 12 in contact with the n-type diffusion layer 4 is formed from the n-type side paste 9.
  • the highest temperature when firing the firing object 10 is a temperature for forming the n-type side electrode 12 made of silver, and is 800 ° C., for example.
  • FIG. 3 is a diagram showing the relationship between the time for performing the firing step and the firing temperature.
  • the firing step is a step of firing the firing object 10.
  • the firing temperature is the temperature of the firing object 10 when firing the firing object 10.
  • Step P for forming the p-type side electrode 11 is performed before Step N for forming the n-type side electrode 12.
  • the firing object 10 is fired at a constant temperature within a range from 550 ° C. to 700 ° C. over a period X of 20 seconds or longer.
  • the contact property between the p-type side electrode 11 constituted by silver and aluminum and the p-type diffusion layer 2 can be enhanced.
  • the conventional baking temperature is 750 ° C. to 850 ° C. and relatively high, but the baking temperature in the first embodiment is 550 ° C. to 700 ° C.
  • the temperature is in the range up to.
  • the p-type side paste 8 does not contain aluminum, the contact between the p-type diffusion layer 2 and the p-type side electrode 11 may be insufficient.
  • the p-type side paste 8 containing aluminum is baked at a constant temperature in the range of 550 ° C. to 700 ° C., aluminum reacts with silicon in the p-type diffusion layer 2 to cause aluminum atoms and silicon atoms to react. By bonding, it is considered that the contact property between the p-type diffusion layer 2 and the p-type side electrode 11 is enhanced.
  • the p-type side paste 8 is formed by baking the p-type side paste 8
  • the p-type side paste 8 is rapidly heated using a heater. Therefore, aluminum contained in the p-type side paste 8 and silicon in the p-type diffusion layer 2 are used. Does not react sufficiently, and the bonding force between aluminum atoms and silicon atoms is weak.
  • the p-type side paste 8 is baked over a period X of 20 seconds or more at a constant temperature in the range of 550 ° C. to 700 ° C. Therefore, it is considered that the bonding force between the aluminum atom and the silicon atom is increased, and as a result, the contact property between the p-type diffusion layer 2 and the p-type side electrode 11 is increased.
  • the firing object 10 is arranged so that the n-type side paste 9 is positioned closer to the heater than the p-type side paste 8.
  • FIG. 4 is a cross-sectional view of a firing apparatus 40 for firing the firing object 10.
  • the baking apparatus 40 includes a chamber 41 and a heater 42, and the heater 42 is provided on a wall surface vertically above the chamber 41.
  • the firing object 10 is arranged so that the p-type side paste 8 is positioned vertically below the n-type side paste 9.
  • the influence of the heat from the heater 42 on the p-type side passivation film 6 can be reduced, and as a result, the possibility that the p-type side passivation film 6 is damaged can be reduced.
  • the p-type side paste 8 is baked at a constant temperature in the range of 550 ° C. to 700 ° C. for a period of 20 seconds or longer.
  • the constant temperature is a temperature within a band of 20 ° C. above and below the reference from any temperature.
  • the p-type side paste 8 when the firing object 10 is fired using the heater 42, the p-type side paste 8 is positioned farther from the heater 42 than the n-type side paste 9.
  • the heater 42 when the heater 42 is provided on the vertically upper wall surface inside the chamber 41, the p-type paste 8 is positioned vertically below the n-type paste 9. Thereby, the possibility that the p-type side passivation film 6 is damaged can be reduced.
  • the configuration described in the above embodiment shows an example of the contents of the present invention, and can be combined with another known technique, and can be combined with other configurations without departing from the gist of the present invention. It is also possible to omit or change the part.

Abstract

Un procédé de fabrication de cellule solaire de la présente invention comprend : une étape de formation d'une couche de diffusion de type p sur un côté de surface d'une tranche de silicium de type n ; une étape de fourniture, sur le côté externe de la couche de diffusion de type p, d'une pâte côté type p constituée d'argent et d'aluminium ; et une étape de cuisson de la pâte côté type p pendant une durée X égale ou supérieure à 20 secondes à une température, qui est dans une plage de 550 à 700 °C, et est dans une zone 20 °C au-dessus et au-dessous d'une température définie en tant que référence, et formation d'une électrode côté type p au moyen de la pâte côté type p, ladite électrode côté type p étant en contact avec la couche de diffusion de type p.
PCT/JP2015/085706 2015-12-21 2015-12-21 Procédé de fabrication de cellule solaire WO2017109835A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2015/085706 WO2017109835A1 (fr) 2015-12-21 2015-12-21 Procédé de fabrication de cellule solaire
JP2017557536A JP6509376B2 (ja) 2015-12-21 2015-12-21 太陽電池の製造方法
TW105139420A TWI622182B (zh) 2015-12-21 2016-11-30 Solar cell manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/085706 WO2017109835A1 (fr) 2015-12-21 2015-12-21 Procédé de fabrication de cellule solaire

Publications (1)

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WO2017109835A1 true WO2017109835A1 (fr) 2017-06-29

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JP (1) JP6509376B2 (fr)
TW (1) TWI622182B (fr)
WO (1) WO2017109835A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556669A (en) * 1978-10-20 1980-04-25 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPH10233518A (ja) * 1996-12-20 1998-09-02 Mitsubishi Electric Corp 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
JP2004179337A (ja) * 2002-11-26 2004-06-24 Kyocera Corp 太陽電池素子の形成方法
JP2006093433A (ja) * 2004-09-24 2006-04-06 Sharp Corp 太陽電池の製造方法
WO2008078375A1 (fr) * 2006-12-25 2008-07-03 Namics Corporation Pâte conductrice permettant de former une électrode à substrat de silicium cristallin
JP2010223483A (ja) * 2009-03-23 2010-10-07 Mitsubishi Electric Corp 焼成炉及び焼成炉を使用して作製した太陽電池セル

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101179100A (zh) * 2007-01-17 2008-05-14 江苏林洋新能源有限公司 一种大面积低弯曲超薄型双面照光太阳能电池制作方法
KR101139197B1 (ko) * 2007-11-15 2012-04-26 히다치 가세고교 가부시끼가이샤 태양 전지셀 및 이의 제조 방법
CN102057443A (zh) * 2008-06-04 2011-05-11 Lg化学株式会社 用于形成电极的金属膏组合物以及使用该组合物的银-碳复合电极和硅太阳能电池
US7615393B1 (en) * 2008-10-29 2009-11-10 Innovalight, Inc. Methods of forming multi-doped junctions on a substrate
CN102834933B (zh) * 2009-09-18 2016-03-30 乔治洛德方法研究和开发液化空气有限公司 性能改善的太阳能电池
FR2959351B1 (fr) * 2010-04-26 2013-11-08 Photowatt Int Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium
JP2012248560A (ja) * 2011-05-25 2012-12-13 Panasonic Corp 太陽電池の製造方法
AU2013222069A1 (en) * 2012-02-26 2014-10-16 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP2014220346A (ja) * 2013-05-07 2014-11-20 株式会社村田製作所 太陽電池セルおよびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556669A (en) * 1978-10-20 1980-04-25 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPH10233518A (ja) * 1996-12-20 1998-09-02 Mitsubishi Electric Corp 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
JP2004179337A (ja) * 2002-11-26 2004-06-24 Kyocera Corp 太陽電池素子の形成方法
JP2006093433A (ja) * 2004-09-24 2006-04-06 Sharp Corp 太陽電池の製造方法
WO2008078375A1 (fr) * 2006-12-25 2008-07-03 Namics Corporation Pâte conductrice permettant de former une électrode à substrat de silicium cristallin
JP2010223483A (ja) * 2009-03-23 2010-10-07 Mitsubishi Electric Corp 焼成炉及び焼成炉を使用して作製した太陽電池セル

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Publication number Publication date
TW201733144A (zh) 2017-09-16
TWI622182B (zh) 2018-04-21
JP6509376B2 (ja) 2019-05-08
JPWO2017109835A1 (ja) 2018-03-29

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