JPWO2017109835A1 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JPWO2017109835A1 JPWO2017109835A1 JP2017557536A JP2017557536A JPWO2017109835A1 JP WO2017109835 A1 JPWO2017109835 A1 JP WO2017109835A1 JP 2017557536 A JP2017557536 A JP 2017557536A JP 2017557536 A JP2017557536 A JP 2017557536A JP WO2017109835 A1 JPWO2017109835 A1 JP WO2017109835A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 238000010304 firing Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
図1は、実施の形態1の太陽電池の製造方法の手順の概略を示すフローチャートである。図1に示す通り、まず、n型のシリコンウェハを用意する(S1)。次に、シリコンウェハの一方の面の側にp型拡散層を形成する(S2)。次に、シリコンウェハの他方の面に、n型拡散層を形成することを目的として、n型の成分の不純物を含むドーピングペーストを印刷によってペーストする(S3)。その後、p型拡散層を保護フィルムによって覆う。次に、シリコンウェハを加熱し、ドーピングペーストに含まれるn型の成分の不純物をシリコンウェハの他方の面の側に拡散させる。それにより、シリコンウェハの他方の面の側にn型拡散層を形成する(S4)。
Claims (3)
- n型のシリコンウェハの一方の面の側にp型拡散層を形成するステップと、
前記p型拡散層の外側に銀とアルミニウムとによって構成されるp型側ペーストを設けるステップと、
550℃から700℃までの範囲内の温度であって、いずれかの温度を基準として前記基準から上下20℃の帯域内の温度で20秒以上の期間にわたって前記p型側ペーストを焼成し、前記p型側ペーストから、前記p型拡散層に接するp型側電極を形成するステップと
を含むことを特徴とする太陽電池の製造方法。 - 前記p型側電極を形成するステップにおいて、前記p型側ペーストをヒータによって焼成する場合、前記p型側ペーストを、前記n型のシリコンウェハの他方の面の側に設けられるn型側ペーストよりも前記ヒータから離して位置させることを特徴とする請求項1に記載の太陽電池の製造方法。
- 前記p型拡散層を形成するステップの後かつ前記p型側電極を形成するステップの前に行うステップであって、前記n型のシリコンウェハの他方の面の側にn型拡散層を形成するステップと、
前記n型拡散層を形成するステップの後かつ前記p型側電極を形成するステップの前に行うステップであって、前記n型拡散層の外側に銀によって構成されるn型側ペーストを設けるステップと、
前記p型側電極を形成するステップの後に行うステップであって、前記n型側ペーストを焼成し、前記n型側ペーストから、前記n型拡散層に接するn型側電極を形成するステップとを更に含み、
前記n型側電極を形成するステップにおける前記n型側ペーストを焼成する温度は、前記p型側電極を形成するステップにおける前記p型側ペーストを焼成する温度よりも高い
ことを特徴とする請求項1又は請求項2に記載の太陽電池の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2015/085706 WO2017109835A1 (ja) | 2015-12-21 | 2015-12-21 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017109835A1 true JPWO2017109835A1 (ja) | 2018-03-29 |
JP6509376B2 JP6509376B2 (ja) | 2019-05-08 |
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JP2017557536A Expired - Fee Related JP6509376B2 (ja) | 2015-12-21 | 2015-12-21 | 太陽電池の製造方法 |
Country Status (3)
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JP (1) | JP6509376B2 (ja) |
TW (1) | TWI622182B (ja) |
WO (1) | WO2017109835A1 (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5556669A (en) * | 1978-10-20 | 1980-04-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
JPH10233518A (ja) * | 1996-12-20 | 1998-09-02 | Mitsubishi Electric Corp | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
JP2004179337A (ja) * | 2002-11-26 | 2004-06-24 | Kyocera Corp | 太陽電池素子の形成方法 |
JP2010223483A (ja) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | 焼成炉及び焼成炉を使用して作製した太陽電池セル |
US20120222741A1 (en) * | 2009-09-18 | 2012-09-06 | L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Solar cell with improved performance |
JP2012248560A (ja) * | 2011-05-25 | 2012-12-13 | Panasonic Corp | 太陽電池の製造方法 |
US20140038392A1 (en) * | 2012-02-26 | 2014-02-06 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
JP2014220346A (ja) * | 2013-05-07 | 2014-11-20 | 株式会社村田製作所 | 太陽電池セルおよびその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4846219B2 (ja) * | 2004-09-24 | 2011-12-28 | シャープ株式会社 | 結晶シリコン太陽電池の製造方法 |
JP5203970B2 (ja) * | 2006-12-25 | 2013-06-05 | ナミックス株式会社 | 結晶系シリコン基板の電極形成用導電性ペースト |
CN101179100A (zh) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | 一种大面积低弯曲超薄型双面照光太阳能电池制作方法 |
KR101139197B1 (ko) * | 2007-11-15 | 2012-04-26 | 히다치 가세고교 가부시끼가이샤 | 태양 전지셀 및 이의 제조 방법 |
CN102057443A (zh) * | 2008-06-04 | 2011-05-11 | Lg化学株式会社 | 用于形成电极的金属膏组合物以及使用该组合物的银-碳复合电极和硅太阳能电池 |
US7615393B1 (en) * | 2008-10-29 | 2009-11-10 | Innovalight, Inc. | Methods of forming multi-doped junctions on a substrate |
FR2959351B1 (fr) * | 2010-04-26 | 2013-11-08 | Photowatt Int | Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium |
-
2015
- 2015-12-21 WO PCT/JP2015/085706 patent/WO2017109835A1/ja active Application Filing
- 2015-12-21 JP JP2017557536A patent/JP6509376B2/ja not_active Expired - Fee Related
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2016
- 2016-11-30 TW TW105139420A patent/TWI622182B/zh not_active IP Right Cessation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5556669A (en) * | 1978-10-20 | 1980-04-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
JPH10233518A (ja) * | 1996-12-20 | 1998-09-02 | Mitsubishi Electric Corp | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
JP2004179337A (ja) * | 2002-11-26 | 2004-06-24 | Kyocera Corp | 太陽電池素子の形成方法 |
JP2010223483A (ja) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | 焼成炉及び焼成炉を使用して作製した太陽電池セル |
US20120222741A1 (en) * | 2009-09-18 | 2012-09-06 | L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Solar cell with improved performance |
JP2012248560A (ja) * | 2011-05-25 | 2012-12-13 | Panasonic Corp | 太陽電池の製造方法 |
US20140038392A1 (en) * | 2012-02-26 | 2014-02-06 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
JP2014220346A (ja) * | 2013-05-07 | 2014-11-20 | 株式会社村田製作所 | 太陽電池セルおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI622182B (zh) | 2018-04-21 |
WO2017109835A1 (ja) | 2017-06-29 |
TW201733144A (zh) | 2017-09-16 |
JP6509376B2 (ja) | 2019-05-08 |
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