TWI622182B - Solar cell manufacturing method - Google Patents
Solar cell manufacturing method Download PDFInfo
- Publication number
- TWI622182B TWI622182B TW105139420A TW105139420A TWI622182B TW I622182 B TWI622182 B TW I622182B TW 105139420 A TW105139420 A TW 105139420A TW 105139420 A TW105139420 A TW 105139420A TW I622182 B TWI622182 B TW I622182B
- Authority
- TW
- Taiwan
- Prior art keywords
- type
- paste
- diffusion layer
- temperature
- fired
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 62
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- 238000010304 firing Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2015/085706 WO2017109835A1 (fr) | 2015-12-21 | 2015-12-21 | Procédé de fabrication de cellule solaire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201733144A TW201733144A (zh) | 2017-09-16 |
| TWI622182B true TWI622182B (zh) | 2018-04-21 |
Family
ID=59089707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105139420A TWI622182B (zh) | 2015-12-21 | 2016-11-30 | Solar cell manufacturing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6509376B2 (fr) |
| TW (1) | TWI622182B (fr) |
| WO (1) | WO2017109835A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179100A (zh) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | 一种大面积低弯曲超薄型双面照光太阳能电池制作方法 |
| TW201030813A (en) * | 2008-10-29 | 2010-08-16 | Innovalight Inc | Methods of forming multi-doped junctions on a substrate |
| CN101861656A (zh) * | 2007-11-15 | 2010-10-13 | 日立化成工业株式会社 | 太阳能电池单体 |
| CN102057443A (zh) * | 2008-06-04 | 2011-05-11 | Lg化学株式会社 | 用于形成电极的金属膏组合物以及使用该组合物的银-碳复合电极和硅太阳能电池 |
| CN102971867A (zh) * | 2010-04-26 | 2013-03-13 | 福特沃特法国电力新能源分布公司 | 在硅晶片上制备n+pp+型或p+nn+型结构的方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5556669A (en) * | 1978-10-20 | 1980-04-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
| JP3722326B2 (ja) * | 1996-12-20 | 2005-11-30 | 三菱電機株式会社 | 太陽電池の製造方法 |
| JP3968001B2 (ja) * | 2002-11-26 | 2007-08-29 | 京セラ株式会社 | 太陽電池素子の形成方法 |
| JP4846219B2 (ja) * | 2004-09-24 | 2011-12-28 | シャープ株式会社 | 結晶シリコン太陽電池の製造方法 |
| JP5203970B2 (ja) * | 2006-12-25 | 2013-06-05 | ナミックス株式会社 | 結晶系シリコン基板の電極形成用導電性ペースト |
| JP2010223483A (ja) * | 2009-03-23 | 2010-10-07 | Mitsubishi Electric Corp | 焼成炉及び焼成炉を使用して作製した太陽電池セル |
| WO2011032272A1 (fr) * | 2009-09-18 | 2011-03-24 | Sixtron Advanced Materials, Inc. | Cellule solaire à performance améliorée |
| JP2012248560A (ja) * | 2011-05-25 | 2012-12-13 | Panasonic Corp | 太陽電池の製造方法 |
| EP2817819A4 (fr) * | 2012-02-26 | 2015-09-02 | Solexel Inc | Systèmes et procédés pour une division par laser et un transfert de couche de dispositif |
| JP2014220346A (ja) * | 2013-05-07 | 2014-11-20 | 株式会社村田製作所 | 太陽電池セルおよびその製造方法 |
-
2015
- 2015-12-21 JP JP2017557536A patent/JP6509376B2/ja not_active Expired - Fee Related
- 2015-12-21 WO PCT/JP2015/085706 patent/WO2017109835A1/fr active Application Filing
-
2016
- 2016-11-30 TW TW105139420A patent/TWI622182B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179100A (zh) * | 2007-01-17 | 2008-05-14 | 江苏林洋新能源有限公司 | 一种大面积低弯曲超薄型双面照光太阳能电池制作方法 |
| CN101861656A (zh) * | 2007-11-15 | 2010-10-13 | 日立化成工业株式会社 | 太阳能电池单体 |
| CN102057443A (zh) * | 2008-06-04 | 2011-05-11 | Lg化学株式会社 | 用于形成电极的金属膏组合物以及使用该组合物的银-碳复合电极和硅太阳能电池 |
| TW201030813A (en) * | 2008-10-29 | 2010-08-16 | Innovalight Inc | Methods of forming multi-doped junctions on a substrate |
| CN102971867A (zh) * | 2010-04-26 | 2013-03-13 | 福特沃特法国电力新能源分布公司 | 在硅晶片上制备n+pp+型或p+nn+型结构的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2017109835A1 (ja) | 2018-03-29 |
| JP6509376B2 (ja) | 2019-05-08 |
| WO2017109835A1 (fr) | 2017-06-29 |
| TW201733144A (zh) | 2017-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |