JPS55103740A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55103740A
JPS55103740A JP1015679A JP1015679A JPS55103740A JP S55103740 A JPS55103740 A JP S55103740A JP 1015679 A JP1015679 A JP 1015679A JP 1015679 A JP1015679 A JP 1015679A JP S55103740 A JPS55103740 A JP S55103740A
Authority
JP
Japan
Prior art keywords
metal
aluminum
semiconductor device
alloy layer
ptsi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1015679A
Other languages
Japanese (ja)
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1015679A priority Critical patent/JPS55103740A/en
Publication of JPS55103740A publication Critical patent/JPS55103740A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a thermally stable semiconductor device, by inserting a different kind of metal between an alloy layer and a wiring metal, in a semiconductor device having an alloy layer composed of a polycrystalline semiconductor coated on a semiconductor substrate and a metal, and a metal wiring layer directly connected to this alloy layer.
CONSTITUTION: Platinum silicide (PtSi) 207 and aluminum 209 formed on polycrystalline silicon 205 are connected by means of titanium 209. Consequently, even if silicon substrate 20 is heated subsequently for the purpose of stabilizing the characteristics, no reaction takes place between PtSi and aluminum and no loss occurs on aluminum.
COPYRIGHT: (C)1980,JPO&Japio
JP1015679A 1979-01-31 1979-01-31 Semiconductor device Pending JPS55103740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1015679A JPS55103740A (en) 1979-01-31 1979-01-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1015679A JPS55103740A (en) 1979-01-31 1979-01-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55103740A true JPS55103740A (en) 1980-08-08

Family

ID=11742407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1015679A Pending JPS55103740A (en) 1979-01-31 1979-01-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55103740A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149045A (en) * 1983-02-16 1984-08-25 Nec Corp Semiconductor device
JPS60136255A (en) * 1983-12-23 1985-07-19 Nec Corp Semiconductor ic device
JPS6439059A (en) * 1987-04-20 1989-02-09 Nec Corp Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4858793A (en) * 1971-11-22 1973-08-17
JPS51147290A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor device
JPS52156584A (en) * 1976-06-22 1977-12-27 Nec Corp Multilayer wiring type semiconductor device
JPS5317070A (en) * 1976-07-30 1978-02-16 Nec Corp Semiconductor device
JPS53121490A (en) * 1977-03-31 1978-10-23 Toshiba Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4858793A (en) * 1971-11-22 1973-08-17
JPS51147290A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor device
JPS52156584A (en) * 1976-06-22 1977-12-27 Nec Corp Multilayer wiring type semiconductor device
JPS5317070A (en) * 1976-07-30 1978-02-16 Nec Corp Semiconductor device
JPS53121490A (en) * 1977-03-31 1978-10-23 Toshiba Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149045A (en) * 1983-02-16 1984-08-25 Nec Corp Semiconductor device
JPH0425711B2 (en) * 1983-02-16 1992-05-01 Nippon Electric Co
JPS60136255A (en) * 1983-12-23 1985-07-19 Nec Corp Semiconductor ic device
JPS6439059A (en) * 1987-04-20 1989-02-09 Nec Corp Semiconductor device

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