JPS55103740A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55103740A JPS55103740A JP1015679A JP1015679A JPS55103740A JP S55103740 A JPS55103740 A JP S55103740A JP 1015679 A JP1015679 A JP 1015679A JP 1015679 A JP1015679 A JP 1015679A JP S55103740 A JPS55103740 A JP S55103740A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- aluminum
- semiconductor device
- alloy layer
- ptsi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To obtain a thermally stable semiconductor device, by inserting a different kind of metal between an alloy layer and a wiring metal, in a semiconductor device having an alloy layer composed of a polycrystalline semiconductor coated on a semiconductor substrate and a metal, and a metal wiring layer directly connected to this alloy layer.
CONSTITUTION: Platinum silicide (PtSi) 207 and aluminum 209 formed on polycrystalline silicon 205 are connected by means of titanium 209. Consequently, even if silicon substrate 20 is heated subsequently for the purpose of stabilizing the characteristics, no reaction takes place between PtSi and aluminum and no loss occurs on aluminum.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1015679A JPS55103740A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1015679A JPS55103740A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55103740A true JPS55103740A (en) | 1980-08-08 |
Family
ID=11742407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1015679A Pending JPS55103740A (en) | 1979-01-31 | 1979-01-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55103740A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59149045A (en) * | 1983-02-16 | 1984-08-25 | Nec Corp | Semiconductor device |
JPS60136255A (en) * | 1983-12-23 | 1985-07-19 | Nec Corp | Semiconductor ic device |
JPS6439059A (en) * | 1987-04-20 | 1989-02-09 | Nec Corp | Semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4858793A (en) * | 1971-11-22 | 1973-08-17 | ||
JPS51147290A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Semiconductor device |
JPS52156584A (en) * | 1976-06-22 | 1977-12-27 | Nec Corp | Multilayer wiring type semiconductor device |
JPS5317070A (en) * | 1976-07-30 | 1978-02-16 | Nec Corp | Semiconductor device |
JPS53121490A (en) * | 1977-03-31 | 1978-10-23 | Toshiba Corp | Semiconductor device |
-
1979
- 1979-01-31 JP JP1015679A patent/JPS55103740A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4858793A (en) * | 1971-11-22 | 1973-08-17 | ||
JPS51147290A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Semiconductor device |
JPS52156584A (en) * | 1976-06-22 | 1977-12-27 | Nec Corp | Multilayer wiring type semiconductor device |
JPS5317070A (en) * | 1976-07-30 | 1978-02-16 | Nec Corp | Semiconductor device |
JPS53121490A (en) * | 1977-03-31 | 1978-10-23 | Toshiba Corp | Semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59149045A (en) * | 1983-02-16 | 1984-08-25 | Nec Corp | Semiconductor device |
JPH0425711B2 (en) * | 1983-02-16 | 1992-05-01 | Nippon Electric Co | |
JPS60136255A (en) * | 1983-12-23 | 1985-07-19 | Nec Corp | Semiconductor ic device |
JPS6439059A (en) * | 1987-04-20 | 1989-02-09 | Nec Corp | Semiconductor device |
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