JPS5771149A - Electrode structure of semiconductor device - Google Patents

Electrode structure of semiconductor device

Info

Publication number
JPS5771149A
JPS5771149A JP55146958A JP14695880A JPS5771149A JP S5771149 A JPS5771149 A JP S5771149A JP 55146958 A JP55146958 A JP 55146958A JP 14695880 A JP14695880 A JP 14695880A JP S5771149 A JPS5771149 A JP S5771149A
Authority
JP
Japan
Prior art keywords
hole
bump
psg film
type region
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55146958A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55146958A priority Critical patent/JPS5771149A/en
Publication of JPS5771149A publication Critical patent/JPS5771149A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve reliability of a glass sealed element by a method wherein a through hole provided on a PSG film is so arranged that its circumference may be placed around the outside of a contact hole, and adhesion between an electrode material layer and a bump electrode is performed. CONSTITUTION:For example by P<+> type region 8, 9 a P type region 10 and an N<+> type region are diffused on an N type substrate 7, and a Zener-IC is formed. Heat resistant electrodes 14 such as Ti, Cr or the like are attached in each contact hole 13 disposed in an SiO2 film on the substrate 7 and covered with a PSG film 15. When an Ag bump 5 is attached after providing a through hole 16 in the PSG film 15, a circumference of the through hole 16 is placed in the outside of the cntact hole 13. By this constitution if a stress is generated in the bump 5 when a metallic silicide layer 17 is formed in a heat-treatment process, it is absorbed and relieved by a boundary surface between a metal part 14 placed beneath the end of the PSG film 15 and an SiO2 film 12. Consequently fallng-off on the bump 5 due to breakdown of the metallic slicide layer 17 is prevented, and reliability is improved.
JP55146958A 1980-10-22 1980-10-22 Electrode structure of semiconductor device Pending JPS5771149A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55146958A JPS5771149A (en) 1980-10-22 1980-10-22 Electrode structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55146958A JPS5771149A (en) 1980-10-22 1980-10-22 Electrode structure of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5771149A true JPS5771149A (en) 1982-05-01

Family

ID=15419422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55146958A Pending JPS5771149A (en) 1980-10-22 1980-10-22 Electrode structure of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771149A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601871A (en) * 1983-06-20 1985-01-08 Sanken Electric Co Ltd High withstand voltage semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831382A (en) * 1971-08-31 1973-04-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831382A (en) * 1971-08-31 1973-04-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601871A (en) * 1983-06-20 1985-01-08 Sanken Electric Co Ltd High withstand voltage semiconductor device

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