JPS6481334A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6481334A JPS6481334A JP62237247A JP23724787A JPS6481334A JP S6481334 A JPS6481334 A JP S6481334A JP 62237247 A JP62237247 A JP 62237247A JP 23724787 A JP23724787 A JP 23724787A JP S6481334 A JPS6481334 A JP S6481334A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- type buried
- window
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To form the N-type buried layer of an N-P-N transistor section in a high concentration and the N-type buried layer of a P-N-P transistor section in a low concentration, and to optimize the characteristics of the respective transistors, by removing by etching the surface section of the second N-type buried layer of the vertical P-N-P transistor section and forming the buried layer in the low concentration. CONSTITUTION:N<+> type buried layers 24a, 24b are formed on a P-type semiconductor substrate 21. Then, after an oxide film layer 25 is reformed, a window 26 for forming a P<+> type buried layer is formed in the layer 25, and the surface section of the layer 24b is removed by etching through the window 26. Thus, the high concentration surface section of the layer 24b is removed, and the surface concentration of the layer 24b becomes approx. 1X10<18>cm<-3>. Thereafter, a P<+> type buried layer 27 is formed by ion implanting in the layer 24b through the window 26. Subsequently, after the layer 25 is removed, an N-type epitaxial layer 28 is formed. Then, a P<+> type isolating layer 29 and a P<+> type diffused layer 30 are formed by a thermal diffusing method, and the layers 24a, 24b and the layer 27 are diffused upward.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62237247A JPS6481334A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62237247A JPS6481334A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6481334A true JPS6481334A (en) | 1989-03-27 |
Family
ID=17012580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62237247A Pending JPS6481334A (en) | 1987-09-24 | 1987-09-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6481334A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008028338A (en) * | 2006-07-25 | 2008-02-07 | Mitsumi Electric Co Ltd | Manufacturing method of semiconductor device |
-
1987
- 1987-09-24 JP JP62237247A patent/JPS6481334A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008028338A (en) * | 2006-07-25 | 2008-02-07 | Mitsumi Electric Co Ltd | Manufacturing method of semiconductor device |
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