JPS5541750A - Manufacturing semiconductor device - Google Patents

Manufacturing semiconductor device

Info

Publication number
JPS5541750A
JPS5541750A JP11497878A JP11497878A JPS5541750A JP S5541750 A JPS5541750 A JP S5541750A JP 11497878 A JP11497878 A JP 11497878A JP 11497878 A JP11497878 A JP 11497878A JP S5541750 A JPS5541750 A JP S5541750A
Authority
JP
Japan
Prior art keywords
film
mask
substrate
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11497878A
Other languages
Japanese (ja)
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11497878A priority Critical patent/JPS5541750A/en
Publication of JPS5541750A publication Critical patent/JPS5541750A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To make the surface treatment of a substrate easy to reduce steps and to faciliate the processes by providing a thick selectively oxidized film on a semiconductor substrate by a selective oxidization method.
CONSTITUTION: An Si3N4 film 12 is selectively provided on a P-type Si substrate 1 with an SiO2 film 11 being an underlying film, and a thick SiO2 film 13 is generated from the surface to the inside of the substrate 1 by selective oxidization with the films 12 and 11 being a mask. Then, the films 12 and 11 which have been used as a mask are removed together the surface of the mask 13 simultaneously. The mask 13 is turned into a film 13b which has almost no surface steps. Thereafter, an N+ collector region 3 is embeded in the substrate 1 with the film 13b as a mask, and the region 3 is diffused. Then, an SiO2 film 4 which has been generated at this time is removed and N-type layer is grown all over the surface. A monocrystal layer 5b is grown on the region 3, and a polycrystal layer 5a is grown on the film 13b. Then, the film 5a is oxidized and turned into a film 14 which forms one body with the film 13b. Base, emitter, and collector electrode regions 7W9 are diffused and formed in the region 5b surrounded by the layer 14 and others.
COPYRIGHT: (C)1980,JPO&Japio
JP11497878A 1978-09-18 1978-09-18 Manufacturing semiconductor device Pending JPS5541750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11497878A JPS5541750A (en) 1978-09-18 1978-09-18 Manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11497878A JPS5541750A (en) 1978-09-18 1978-09-18 Manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5541750A true JPS5541750A (en) 1980-03-24

Family

ID=14651321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11497878A Pending JPS5541750A (en) 1978-09-18 1978-09-18 Manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5541750A (en)

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