JPS5541750A - Manufacturing semiconductor device - Google Patents
Manufacturing semiconductor deviceInfo
- Publication number
- JPS5541750A JPS5541750A JP11497878A JP11497878A JPS5541750A JP S5541750 A JPS5541750 A JP S5541750A JP 11497878 A JP11497878 A JP 11497878A JP 11497878 A JP11497878 A JP 11497878A JP S5541750 A JPS5541750 A JP S5541750A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- substrate
- region
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To make the surface treatment of a substrate easy to reduce steps and to faciliate the processes by providing a thick selectively oxidized film on a semiconductor substrate by a selective oxidization method.
CONSTITUTION: An Si3N4 film 12 is selectively provided on a P-type Si substrate 1 with an SiO2 film 11 being an underlying film, and a thick SiO2 film 13 is generated from the surface to the inside of the substrate 1 by selective oxidization with the films 12 and 11 being a mask. Then, the films 12 and 11 which have been used as a mask are removed together the surface of the mask 13 simultaneously. The mask 13 is turned into a film 13b which has almost no surface steps. Thereafter, an N+ collector region 3 is embeded in the substrate 1 with the film 13b as a mask, and the region 3 is diffused. Then, an SiO2 film 4 which has been generated at this time is removed and N-type layer is grown all over the surface. A monocrystal layer 5b is grown on the region 3, and a polycrystal layer 5a is grown on the film 13b. Then, the film 5a is oxidized and turned into a film 14 which forms one body with the film 13b. Base, emitter, and collector electrode regions 7W9 are diffused and formed in the region 5b surrounded by the layer 14 and others.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11497878A JPS5541750A (en) | 1978-09-18 | 1978-09-18 | Manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11497878A JPS5541750A (en) | 1978-09-18 | 1978-09-18 | Manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5541750A true JPS5541750A (en) | 1980-03-24 |
Family
ID=14651321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11497878A Pending JPS5541750A (en) | 1978-09-18 | 1978-09-18 | Manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5541750A (en) |
-
1978
- 1978-09-18 JP JP11497878A patent/JPS5541750A/en active Pending
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