JPS5649538A - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
JPS5649538A
JPS5649538A JP12413479A JP12413479A JPS5649538A JP S5649538 A JPS5649538 A JP S5649538A JP 12413479 A JP12413479 A JP 12413479A JP 12413479 A JP12413479 A JP 12413479A JP S5649538 A JPS5649538 A JP S5649538A
Authority
JP
Japan
Prior art keywords
layer
substrate
film
sio2
monocrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12413479A
Other languages
Japanese (ja)
Inventor
Hajime Terakado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12413479A priority Critical patent/JPS5649538A/en
Publication of JPS5649538A publication Critical patent/JPS5649538A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Abstract

PURPOSE:To obtain a high voltage resistant semiconductor device without including any crystal defect by a method wherein a semiconductor substrate is of a composite substrate comprising a polycrystal and a monocrystal with an SiO2 film therebetween, the monocrystal layer is separated into the form of islands by a selective oxide reaching to the SiO2 film and the insular area is used as a circuit forming portion. CONSTITUTION:On both sides of an n<-> type monocrystal substrate 1 n type impurities are deposition-diffused to form an n<+> type layer 2 constituting a buried layer in later. An Si layer is formed by vapor phase epitaxy on one of the both sides through an SiO2 film 3 formed at the same time of the deposition diffusion to give a polycrystal Si layer 4 in the presence of the layer 3. Then, thus obtained element is fixed on a sappire substrate 5 with the layer 4 thereof in contact against the surface of the substrate 5. The upper side opposing to the layer 4 is mechanically polished to reduce a thickness of the substrate 1 and an SiO2 film 6 and an Si3N4 film 7 are coated thereon. Thereafter, the film 7 is removed from the predetermined positions to form SiO2 isolation portions 8 reaching to the film 2 of the substrate 1 at the opposite side by selective oxidation, and the substrate 1 separated into the form of islands is used as a circuit forming portion.
JP12413479A 1979-09-28 1979-09-28 Semiconductor device and method of manufacturing the same Pending JPS5649538A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12413479A JPS5649538A (en) 1979-09-28 1979-09-28 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12413479A JPS5649538A (en) 1979-09-28 1979-09-28 Semiconductor device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
JPS5649538A true JPS5649538A (en) 1981-05-06

Family

ID=14877757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12413479A Pending JPS5649538A (en) 1979-09-28 1979-09-28 Semiconductor device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JPS5649538A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01105574A (en) * 1987-10-19 1989-04-24 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01105574A (en) * 1987-10-19 1989-04-24 Fujitsu Ltd Manufacture of semiconductor device

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