JPS5455181A - Production of semiconductor substrate - Google Patents

Production of semiconductor substrate

Info

Publication number
JPS5455181A
JPS5455181A JP12146577A JP12146577A JPS5455181A JP S5455181 A JPS5455181 A JP S5455181A JP 12146577 A JP12146577 A JP 12146577A JP 12146577 A JP12146577 A JP 12146577A JP S5455181 A JPS5455181 A JP S5455181A
Authority
JP
Japan
Prior art keywords
substrate
sio
layer
semiconductor substrate
base glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12146577A
Other languages
Japanese (ja)
Inventor
Takeo Yamazaki
Tadahiko Mitsuyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12146577A priority Critical patent/JPS5455181A/en
Publication of JPS5455181A publication Critical patent/JPS5455181A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain powerful bonding layers by laminating and growing an insulator layer and a polycrystalline semiconductor layer on a semiconductor substrate formed with isolation grooves and using B2O3-SiO2 base or P2O5-siO2 base glass at the time of bonding said polycrystalline layer on a supporting substrate.
CONSTITUTION: Isolation layers 120 ae etched in the surface of a semiconductor substrate 110 for circuit element formation, and an insulator film 130 and a polycrystalline semiconductor layer 140 are laminated and grown thereon. Next, the layer 140 is polished to flatten the surface, where a spin-on glass film 150 composed of B2O3-SiO2 base glass of 3 to 12mol% in the content of B2O3 or P2O5-SiO2 base glass containing 4 to 9mol% of P2O5 is coated. On the other hand, the same film 150 is beforehand coated also on the surface of a supporting substrate 210 to be bonded to the substrate 110 and these films 150 are superposed and thermo-compression-bonded. Thereafter, the surface of the substrate 110 is polished away down to the position shown by the dotted line A-A, whereby the insulated and isolated substrate having the single crystal islands 110a having been insulated and isolated is obtained
COPYRIGHT: (C)1979,JPO&Japio
JP12146577A 1977-10-12 1977-10-12 Production of semiconductor substrate Pending JPS5455181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12146577A JPS5455181A (en) 1977-10-12 1977-10-12 Production of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12146577A JPS5455181A (en) 1977-10-12 1977-10-12 Production of semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5455181A true JPS5455181A (en) 1979-05-02

Family

ID=14811802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12146577A Pending JPS5455181A (en) 1977-10-12 1977-10-12 Production of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5455181A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337652A (en) * 1986-07-31 1988-02-18 Sumitomo Metal Mining Co Ltd Adhesion method of substrate for semiconductor device
JPS63202035A (en) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS63202034A (en) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp Manufacture of semiconductor device
WO1998044319A1 (en) * 1997-04-03 1998-10-08 Yamatake Corporation Circuit board and detector, and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337652A (en) * 1986-07-31 1988-02-18 Sumitomo Metal Mining Co Ltd Adhesion method of substrate for semiconductor device
JPS63202035A (en) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS63202034A (en) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp Manufacture of semiconductor device
WO1998044319A1 (en) * 1997-04-03 1998-10-08 Yamatake Corporation Circuit board and detector, and method for manufacturing the same
US6353262B1 (en) 1997-04-03 2002-03-05 Yamatake Corporation Circuit substrate, detector, and method of manufacturing the same
US6475821B2 (en) 1997-04-03 2002-11-05 Yamatake Corporation Circuit substrate, detector, and method of manufacturing the same

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