WO1994014201B1 - Electrical interconnect structures - Google Patents
Electrical interconnect structuresInfo
- Publication number
- WO1994014201B1 WO1994014201B1 PCT/US1993/011632 US9311632W WO9414201B1 WO 1994014201 B1 WO1994014201 B1 WO 1994014201B1 US 9311632 W US9311632 W US 9311632W WO 9414201 B1 WO9414201 B1 WO 9414201B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dielectric material
- layer
- electrically conducting
- conducting film
- depositing
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract 4
- 239000000758 substrate Substances 0.000 claims abstract 4
- 239000003989 dielectric material Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
Abstract
Electrical interconnect structures comprised of high temperature superconducting signal layers on a substrate bonded to one another or optionally to a base substructure containing power and ground planes and processes for their preparation are disclosed.
Claims
AMENDED CLAIMS
[received by the International Bureau on 21 June 1994 (21.06.94); original claims 1-11 unchanged; original claims 12-16 cancelled (1 page)]
(b) depositing a layer of dielectric material onto the electrically conducting film;
(d) depositing a second electrically conducting film which can serve as a ground plane or power plane onto the layer of dielectric material;
(3) bonding the exposed patterned signal layer of substructure D to the exposed electrically conducting film of substructure A with a layer of dielectric material having a thickness of at least 2 μm and a dielectric constant of less than about 5; and
(4) producing holes through the top surface (reduced first crystal substrate) of the combined substructures D and A to the power plane, ground plane, and signal layers and depositing metal into the holes to provide vias to said planes and layers to yield the electrical interconnect structure.
9. The process of Claim 8 wherein the thickness of the first single crystal substrate is reduced to a maximum thickness of about 5 μm. 10. The structure and processes of Claim 1, 4, or 8 wherein the dielectric material bonding the substructures to one another is a polymer.
11. The structure and process of Claim 2, 4, or 8 wherein the power plane and the ground plane are expitaxially grown high temperature oxide super¬ conductors, and the single crystal substrates of the signal layers are LaAlθ3, MgO, sapphire or NdGaθ3.
AMENDED SHEET(ARHCLE19)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6514230A JPH08504541A (en) | 1992-12-15 | 1993-12-07 | Electrical interconnection structure |
| KR1019950702436A KR950704819A (en) | 1992-12-15 | 1993-12-07 | ELECTRICAL INTERCONNECT STRUCTURES |
| EP94904394A EP0674808B1 (en) | 1992-12-15 | 1993-12-07 | Electrical interconnect structures |
| DE69309306T DE69309306T2 (en) | 1992-12-15 | 1993-12-07 | Electrical connection structures |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US99227592A | 1992-12-15 | 1992-12-15 | |
| US8046393A | 1993-06-21 | 1993-06-21 | |
| US07/992,275 | 1993-06-21 | ||
| US08/080,463 | 1993-06-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1994014201A1 WO1994014201A1 (en) | 1994-06-23 |
| WO1994014201B1 true WO1994014201B1 (en) | 1994-08-04 |
Family
ID=26763551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1993/011632 WO1994014201A1 (en) | 1992-12-15 | 1993-12-07 | Electrical interconnect structures |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5567330A (en) |
| EP (1) | EP0674808B1 (en) |
| JP (1) | JPH08504541A (en) |
| KR (1) | KR950704819A (en) |
| CA (1) | CA2150913A1 (en) |
| DE (1) | DE69309306T2 (en) |
| TW (1) | TW245839B (en) |
| WO (1) | WO1994014201A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759625A (en) * | 1994-06-03 | 1998-06-02 | E. I. Du Pont De Nemours And Company | Fluoropolymer protectant layer for high temperature superconductor film and photo-definition thereof |
| JP2871516B2 (en) * | 1995-03-22 | 1999-03-17 | 株式会社移動体通信先端技術研究所 | Oxide superconducting thin film device |
| US5662816A (en) * | 1995-12-04 | 1997-09-02 | Lucent Technologies Inc. | Signal isolating microwave splitters/combiners |
| US6073482A (en) * | 1997-07-21 | 2000-06-13 | Ysi Incorporated | Fluid flow module |
| US5932799A (en) * | 1997-07-21 | 1999-08-03 | Ysi Incorporated | Microfluidic analyzer module |
| US6293012B1 (en) | 1997-07-21 | 2001-09-25 | Ysi Incorporated | Method of making a fluid flow module |
| SE9904263L (en) | 1999-11-23 | 2001-05-24 | Ericsson Telefon Ab L M | Superconducting substrate structure and a method for producing such a structure |
| US20050062131A1 (en) * | 2003-09-24 | 2005-03-24 | Murduck James Matthew | A1/A1Ox/A1 resistor process for integrated circuits |
| KR102266022B1 (en) * | 2014-03-07 | 2021-06-16 | 스미토모 덴키 고교 가부시키가이샤 | Oxide superconducting thin film wire and method for producing same |
| JP6789385B2 (en) * | 2016-09-13 | 2020-11-25 | グーグル エルエルシー | Reduction of loss in stacked quantum devices |
| JP7003719B2 (en) * | 2018-02-16 | 2022-02-04 | 日本電信電話株式会社 | Magnetic materials and elements |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59144190A (en) * | 1983-02-08 | 1984-08-18 | Agency Of Ind Science & Technol | Mounting substrate for superconductive circuit |
| US4474828A (en) * | 1983-03-30 | 1984-10-02 | Sperry Corporation | Method of controlling the supercurrent of a Josephson junction device |
| KR900001273B1 (en) * | 1983-12-23 | 1990-03-05 | 후지쑤 가부시끼가이샤 | Semiconductor integrated circuit device |
| JPS61239649A (en) * | 1985-04-13 | 1986-10-24 | Fujitsu Ltd | High-speed integrated circuit package |
| CA1329952C (en) * | 1987-04-27 | 1994-05-31 | Yoshihiko Imanaka | Multi-layer superconducting circuit substrate and process for manufacturing same |
| EP0301962B1 (en) * | 1987-07-27 | 1994-04-20 | Sumitomo Electric Industries Limited | A superconducting thin film and a method for preparing the same |
| US4980339A (en) * | 1987-07-29 | 1990-12-25 | Matsushita Electric Industrial Co., Ltd. | Superconductor structure |
| US4837609A (en) * | 1987-09-09 | 1989-06-06 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices having superconducting interconnects |
| JPH01157007A (en) * | 1987-12-11 | 1989-06-20 | Sony Corp | Superconductive wire material |
| JPH01158757A (en) * | 1987-12-16 | 1989-06-21 | Hitachi Ltd | Circuit mounting structure |
| JP2598973B2 (en) * | 1988-07-27 | 1997-04-09 | 三洋電機株式会社 | Laminated superconducting element |
| EP0358879A3 (en) * | 1988-09-13 | 1991-02-27 | Hewlett-Packard Company | Method of making high density interconnects |
| US5087605A (en) * | 1989-06-01 | 1992-02-11 | Bell Communications Research, Inc. | Layered lattice-matched superconducting device and method of making |
| JPH0710005B2 (en) * | 1989-08-31 | 1995-02-01 | アメリカン テレフォン アンド テレグラフ カムパニー | Superconductor interconnection device |
| US5159347A (en) * | 1989-11-14 | 1992-10-27 | E-Systems, Inc. | Micromagnetic circuit |
| WO1992020108A1 (en) * | 1991-05-08 | 1992-11-12 | Superconductor Technologies, Inc. | Multichip interconnect module including superconductive materials |
| EP0538077B1 (en) * | 1991-10-18 | 1996-05-22 | Shinko Electric Industries Co. Ltd. | Super conducting quantum interference device |
-
1993
- 1993-12-07 JP JP6514230A patent/JPH08504541A/en active Pending
- 1993-12-07 EP EP94904394A patent/EP0674808B1/en not_active Expired - Lifetime
- 1993-12-07 KR KR1019950702436A patent/KR950704819A/en not_active Application Discontinuation
- 1993-12-07 DE DE69309306T patent/DE69309306T2/en not_active Expired - Fee Related
- 1993-12-07 WO PCT/US1993/011632 patent/WO1994014201A1/en active IP Right Grant
- 1993-12-07 CA CA002150913A patent/CA2150913A1/en not_active Abandoned
- 1993-12-10 TW TW082110498A patent/TW245839B/zh active
-
1994
- 1994-10-17 US US08/324,064 patent/US5567330A/en not_active Expired - Fee Related
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