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JPS6412543A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6412543A
JPS6412543A JP16770987A JP16770987A JPS6412543A JP S6412543 A JPS6412543 A JP S6412543A JP 16770987 A JP16770987 A JP 16770987A JP 16770987 A JP16770987 A JP 16770987A JP S6412543 A JPS6412543 A JP S6412543A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
silicon
substrate
single
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16770987A
Inventor
Tsuneo Tsukagoshi
Junichi Oura
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE:To enlarge single-crystal islands in thickness by a method wherein a laminate substrate is formed of two substrates sandwiching an element isolating insulating film and another insulating film of a different material and one of the substrates constituting the laminate is divided into a plurality of insular semiconductor layers. CONSTITUTION:A surface is mirror-polished of a silicon substrate 10 and of a silicon substrate 12 and, thereon, a thermal oxide film 11 and a silicon nitride film 13 are formed, respectively. The polished surfaces are then bonded for the formation of a laminate substrate. The surface of the silicon substrate 10 now in the laminate is polished and then subjected to etching for division into single-crystal islands 10-1 and 10-2 and a region free of a single crystal. Next, the thermal oxide film 11 is locally removed for the exposure of the silicon nitride film 13. A thermal oxide film 14 is formed in the vicinity of the single crystals. A process follows wherein only the nitride film 13 is removed for the exposure of the surface of the silicon substrate 12, which is followed by the depositing of an epitaxial layer 16 on the silicon substrate 12. During this process, on the other parts of the thermal oxide film 11, a polycrystalline silicon layer 17 is deposited. Abrasion is performed from the surface for the exposure of the single-crystal islands 10-1 and 10-2 and the thermal oxide film 14, thickening the islands.
JP16770987A 1987-07-07 1987-07-07 Manufacture of semiconductor device Pending JPS6412543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16770987A JPS6412543A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16770987A JPS6412543A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6412543A true true JPS6412543A (en) 1989-01-17

Family

ID=15854756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16770987A Pending JPS6412543A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6412543A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948748A (en) * 1985-09-30 1990-08-14 Kabushiki Kaisha Toshiba Manufacture of a substrate structure for a composite semiconductor device using wafer bonding and epitaxial refill
US5162254A (en) * 1989-10-31 1992-11-10 Fujitsu Limited Semiconductor device having a SOI substrate and fabrication method thereof
US5346848A (en) * 1993-06-01 1994-09-13 Motorola, Inc. Method of bonding silicon and III-V semiconductor materials
US5444014A (en) * 1994-12-16 1995-08-22 Electronics And Telecommunications Research Institute Method for fabricating semiconductor device
US5585304A (en) * 1991-06-13 1996-12-17 Agency Industrial Science Method of making semiconductor device with multiple transparent layers
US6107125A (en) * 1997-06-18 2000-08-22 International Business Machines Corporation SOI/bulk hybrid substrate and method of forming the same
JP2007129256A (en) * 2007-01-05 2007-05-24 Toshiba Corp Element formation substrate
JP2007180569A (en) * 2001-12-27 2007-07-12 Toshiba Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948748A (en) * 1985-09-30 1990-08-14 Kabushiki Kaisha Toshiba Manufacture of a substrate structure for a composite semiconductor device using wafer bonding and epitaxial refill
US5162254A (en) * 1989-10-31 1992-11-10 Fujitsu Limited Semiconductor device having a SOI substrate and fabrication method thereof
US5585304A (en) * 1991-06-13 1996-12-17 Agency Industrial Science Method of making semiconductor device with multiple transparent layers
US5346848A (en) * 1993-06-01 1994-09-13 Motorola, Inc. Method of bonding silicon and III-V semiconductor materials
US5444014A (en) * 1994-12-16 1995-08-22 Electronics And Telecommunications Research Institute Method for fabricating semiconductor device
US6107125A (en) * 1997-06-18 2000-08-22 International Business Machines Corporation SOI/bulk hybrid substrate and method of forming the same
JP2007180569A (en) * 2001-12-27 2007-07-12 Toshiba Corp Semiconductor device
JP2007129256A (en) * 2007-01-05 2007-05-24 Toshiba Corp Element formation substrate

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