JPS5440085A - Manufacture of mis-type semiconductor device - Google Patents

Manufacture of mis-type semiconductor device

Info

Publication number
JPS5440085A
JPS5440085A JP10654577A JP10654577A JPS5440085A JP S5440085 A JPS5440085 A JP S5440085A JP 10654577 A JP10654577 A JP 10654577A JP 10654577 A JP10654577 A JP 10654577A JP S5440085 A JPS5440085 A JP S5440085A
Authority
JP
Japan
Prior art keywords
mis
manufacture
semiconductor device
type semiconductor
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10654577A
Other languages
Japanese (ja)
Inventor
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10654577A priority Critical patent/JPS5440085A/en
Publication of JPS5440085A publication Critical patent/JPS5440085A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To secure the formation of a uniform thickness insulator film by forming the gate oxide film when the inter-layer insulator film is formed on the first poly-crystal Si wiring layer in the different manufacturing processes, and thus to reduce the floating capacity between the first and second poly-crystal Si wiring layers.
COPYRIGHT: (C)1979,JPO&Japio
JP10654577A 1977-09-05 1977-09-05 Manufacture of mis-type semiconductor device Pending JPS5440085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10654577A JPS5440085A (en) 1977-09-05 1977-09-05 Manufacture of mis-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10654577A JPS5440085A (en) 1977-09-05 1977-09-05 Manufacture of mis-type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5440085A true JPS5440085A (en) 1979-03-28

Family

ID=14436326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10654577A Pending JPS5440085A (en) 1977-09-05 1977-09-05 Manufacture of mis-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5440085A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147287A (en) * 1975-06-13 1976-12-17 Nec Corp Integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147287A (en) * 1975-06-13 1976-12-17 Nec Corp Integrated circuit

Similar Documents

Publication Publication Date Title
JPS53124084A (en) Semiconductor memory device containing floating type poly silicon layer and its manufacture
JPS5696850A (en) Semiconductor device and manufacture thereof
JPS5314580A (en) Production of semiconductor device
JPS5331964A (en) Production of semiconductor substrates
JPS5440085A (en) Manufacture of mis-type semiconductor device
JPS5710926A (en) Manufacture of semiconductor device
JPS57167656A (en) Manufacture of semiconductor device
JPS5339084A (en) Silicon gate mis semiconductor device
JPS5380A (en) Manufacture of semiconductor device
JPS52141580A (en) Manufacture of mos-type semiconductor device
JPS53144686A (en) Production of semiconductor device
JPS5522885A (en) Insulation gate type field effect semiconductor device
JPS5552252A (en) Semiconductor integrated circuit device and manufacturing of them
JPS53124090A (en) Semiconductor device
JPS5211773A (en) Method of manufacturing semiconductor device
JPS52102691A (en) Formation of wiring on insulating layer having steps
JPS5317286A (en) Production of semiconductor device
JPS5372473A (en) Manufacture of mis type semicondctor device
JPS52113688A (en) Production of semiconductor device
JPS5356981A (en) Production of semiconductor device
JPS53129982A (en) Production of mos type semiconductor devices
JPS5363986A (en) Production of semiconductor device
JPS5365676A (en) Manufacture of integrated semiconductor device
JPS5575243A (en) Method of fabricating mis semiconductor device having two-layer polycrystalline silicon wired layer
JPS57126148A (en) Semiconductor integrated circuit