JPS5314580A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5314580A
JPS5314580A JP8816176A JP8816176A JPS5314580A JP S5314580 A JPS5314580 A JP S5314580A JP 8816176 A JP8816176 A JP 8816176A JP 8816176 A JP8816176 A JP 8816176A JP S5314580 A JPS5314580 A JP S5314580A
Authority
JP
Japan
Prior art keywords
layer
production
semiconductor device
mask
insulation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8816176A
Other languages
Japanese (ja)
Inventor
Yasunobu Osa
Yasuo Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8816176A priority Critical patent/JPS5314580A/en
Publication of JPS5314580A publication Critical patent/JPS5314580A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To release the undulations of a substrate and obtain an interlayer insulation film of MOSFET having a mild sloped surface by growing a poly-crystalline Si layer on a semiconductor substrate, making an insulation layer through selective oxidation of said layer using a mask, then removing the mask and forming wiring extending onto the insulation film with the polycrystalline Si layer as a contact part.
COPYRIGHT: (C)1978,JPO&Japio
JP8816176A 1976-07-26 1976-07-26 Production of semiconductor device Pending JPS5314580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8816176A JPS5314580A (en) 1976-07-26 1976-07-26 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8816176A JPS5314580A (en) 1976-07-26 1976-07-26 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5314580A true JPS5314580A (en) 1978-02-09

Family

ID=13935190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8816176A Pending JPS5314580A (en) 1976-07-26 1976-07-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5314580A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107280A (en) * 1978-02-10 1979-08-22 Nec Corp Semiconductor integrated circuit unit
JPS54128689A (en) * 1978-03-27 1979-10-05 Intel Corp Method of forming contact area between polycrystal sllicon layers
JPS556861A (en) * 1978-06-29 1980-01-18 Seiko Epson Corp Semiconductor integrated circuit device
JPS5534435A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of mos type semiconductor device
JPS5588355A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Manufacturing method of semiconductor device
JPS5626470A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Field-effect transistor manufacturing process
JPS60140736A (en) * 1983-12-27 1985-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS62115846A (en) * 1985-11-15 1987-05-27 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPS63204629A (en) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Formation of electrode
US5043298A (en) * 1989-03-09 1991-08-27 Kabushiki Kaisha Toshiba Process for manufacturing a DRAM cell
JPH09181197A (en) * 1995-12-07 1997-07-11 Lg Semicon Co Ltd Cmos analog semiconductor device and its manufacture

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107280A (en) * 1978-02-10 1979-08-22 Nec Corp Semiconductor integrated circuit unit
JPS54128689A (en) * 1978-03-27 1979-10-05 Intel Corp Method of forming contact area between polycrystal sllicon layers
JPS556861A (en) * 1978-06-29 1980-01-18 Seiko Epson Corp Semiconductor integrated circuit device
JPS5534435A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of mos type semiconductor device
JPS5588355A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Manufacturing method of semiconductor device
JPS5626470A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Field-effect transistor manufacturing process
JPS60140736A (en) * 1983-12-27 1985-07-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH0480535B2 (en) * 1983-12-27 1992-12-18 Matsushita Electric Ind Co Ltd
JPS62115846A (en) * 1985-11-15 1987-05-27 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPS63204629A (en) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Formation of electrode
US5043298A (en) * 1989-03-09 1991-08-27 Kabushiki Kaisha Toshiba Process for manufacturing a DRAM cell
JPH09181197A (en) * 1995-12-07 1997-07-11 Lg Semicon Co Ltd Cmos analog semiconductor device and its manufacture

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