JPS5314580A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5314580A JPS5314580A JP8816176A JP8816176A JPS5314580A JP S5314580 A JPS5314580 A JP S5314580A JP 8816176 A JP8816176 A JP 8816176A JP 8816176 A JP8816176 A JP 8816176A JP S5314580 A JPS5314580 A JP S5314580A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- production
- semiconductor device
- mask
- insulation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To release the undulations of a substrate and obtain an interlayer insulation film of MOSFET having a mild sloped surface by growing a poly-crystalline Si layer on a semiconductor substrate, making an insulation layer through selective oxidation of said layer using a mask, then removing the mask and forming wiring extending onto the insulation film with the polycrystalline Si layer as a contact part.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8816176A JPS5314580A (en) | 1976-07-26 | 1976-07-26 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8816176A JPS5314580A (en) | 1976-07-26 | 1976-07-26 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5314580A true JPS5314580A (en) | 1978-02-09 |
Family
ID=13935190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8816176A Pending JPS5314580A (en) | 1976-07-26 | 1976-07-26 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5314580A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54107280A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Semiconductor integrated circuit unit |
JPS54128689A (en) * | 1978-03-27 | 1979-10-05 | Intel Corp | Method of forming contact area between polycrystal sllicon layers |
JPS556861A (en) * | 1978-06-29 | 1980-01-18 | Seiko Epson Corp | Semiconductor integrated circuit device |
JPS5534435A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of mos type semiconductor device |
JPS5588355A (en) * | 1978-12-27 | 1980-07-04 | Hitachi Ltd | Manufacturing method of semiconductor device |
JPS5626470A (en) * | 1979-08-13 | 1981-03-14 | Hitachi Ltd | Field-effect transistor manufacturing process |
JPS60140736A (en) * | 1983-12-27 | 1985-07-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS62115846A (en) * | 1985-11-15 | 1987-05-27 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPS63204629A (en) * | 1987-02-19 | 1988-08-24 | Sanyo Electric Co Ltd | Formation of electrode |
US5043298A (en) * | 1989-03-09 | 1991-08-27 | Kabushiki Kaisha Toshiba | Process for manufacturing a DRAM cell |
JPH09181197A (en) * | 1995-12-07 | 1997-07-11 | Lg Semicon Co Ltd | Cmos analog semiconductor device and its manufacture |
-
1976
- 1976-07-26 JP JP8816176A patent/JPS5314580A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54107280A (en) * | 1978-02-10 | 1979-08-22 | Nec Corp | Semiconductor integrated circuit unit |
JPS54128689A (en) * | 1978-03-27 | 1979-10-05 | Intel Corp | Method of forming contact area between polycrystal sllicon layers |
JPS556861A (en) * | 1978-06-29 | 1980-01-18 | Seiko Epson Corp | Semiconductor integrated circuit device |
JPS5534435A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of mos type semiconductor device |
JPS5588355A (en) * | 1978-12-27 | 1980-07-04 | Hitachi Ltd | Manufacturing method of semiconductor device |
JPS5626470A (en) * | 1979-08-13 | 1981-03-14 | Hitachi Ltd | Field-effect transistor manufacturing process |
JPS60140736A (en) * | 1983-12-27 | 1985-07-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH0480535B2 (en) * | 1983-12-27 | 1992-12-18 | Matsushita Electric Ind Co Ltd | |
JPS62115846A (en) * | 1985-11-15 | 1987-05-27 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPS63204629A (en) * | 1987-02-19 | 1988-08-24 | Sanyo Electric Co Ltd | Formation of electrode |
US5043298A (en) * | 1989-03-09 | 1991-08-27 | Kabushiki Kaisha Toshiba | Process for manufacturing a DRAM cell |
JPH09181197A (en) * | 1995-12-07 | 1997-07-11 | Lg Semicon Co Ltd | Cmos analog semiconductor device and its manufacture |
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