JPS5371582A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5371582A
JPS5371582A JP14725876A JP14725876A JPS5371582A JP S5371582 A JPS5371582 A JP S5371582A JP 14725876 A JP14725876 A JP 14725876A JP 14725876 A JP14725876 A JP 14725876A JP S5371582 A JPS5371582 A JP S5371582A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
patterned
layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14725876A
Other languages
Japanese (ja)
Inventor
Shigeji Yamamoto
Osamu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14725876A priority Critical patent/JPS5371582A/en
Publication of JPS5371582A publication Critical patent/JPS5371582A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: After being formed on a semiconductor substrate, an insulating film is patterned and covered to grow an epitaxial layer, and among this grown layer, the both side wall parts of the patterned insulating film are selectively oxidized to be converted into an insulating layers, so that the insulation at an emitter region will be perfect by forming the desired-depth insulating layer.
COPYRIGHT: (C)1978,JPO&Japio
JP14725876A 1976-12-08 1976-12-08 Manufacture of semiconductor device Pending JPS5371582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14725876A JPS5371582A (en) 1976-12-08 1976-12-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14725876A JPS5371582A (en) 1976-12-08 1976-12-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5371582A true JPS5371582A (en) 1978-06-26

Family

ID=15426153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14725876A Pending JPS5371582A (en) 1976-12-08 1976-12-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5371582A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955269A (en) * 1975-06-19 1976-05-11 International Business Machines Corporation Fabricating high performance integrated bipolar and complementary field effect transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955269A (en) * 1975-06-19 1976-05-11 International Business Machines Corporation Fabricating high performance integrated bipolar and complementary field effect transistors

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