JPS5339887A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5339887A JPS5339887A JP11368776A JP11368776A JPS5339887A JP S5339887 A JPS5339887 A JP S5339887A JP 11368776 A JP11368776 A JP 11368776A JP 11368776 A JP11368776 A JP 11368776A JP S5339887 A JPS5339887 A JP S5339887A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- layers
- forming
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To eliminate the need for etching of high accuracy at the forming of an isolation layer and avoid the degradation of the characteristics by forming isolation layers composed of buried layers and selectively oxidized layers, thereafter growing an epitaxial layer covering the surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11368776A JPS5339887A (en) | 1976-09-24 | 1976-09-24 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11368776A JPS5339887A (en) | 1976-09-24 | 1976-09-24 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5339887A true JPS5339887A (en) | 1978-04-12 |
Family
ID=14618627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11368776A Pending JPS5339887A (en) | 1976-09-24 | 1976-09-24 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5339887A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5913684A (en) * | 1982-07-09 | 1984-01-24 | 東北電力株式会社 | Polymer impregnation by normal temperature natural polymerization |
-
1976
- 1976-09-24 JP JP11368776A patent/JPS5339887A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5913684A (en) * | 1982-07-09 | 1984-01-24 | 東北電力株式会社 | Polymer impregnation by normal temperature natural polymerization |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5351970A (en) | Manufacture for semiconductor substrate | |
JPS5293285A (en) | Structure for semiconductor device | |
JPS54589A (en) | Burying method of insulator | |
JPS5434756A (en) | Vapor-phase growth method for semiconductor | |
JPS5339887A (en) | Production of semiconductor device | |
JPS5370777A (en) | Dielectric isolating method | |
JPS5317068A (en) | Semiconductor device and its production | |
JPS5316586A (en) | Semiconductor device | |
JPS5295984A (en) | Vertical junction type field effect transistor | |
JPS5366163A (en) | Selective growth method of semiconductor buried layer | |
JPS5317286A (en) | Production of semiconductor device | |
JPS5314585A (en) | Semiconductor device | |
JPS5371582A (en) | Manufacture of semiconductor device | |
JPS5356981A (en) | Production of semiconductor device | |
JPS52124879A (en) | Production of semiconductor integrated circuit | |
JPS5368990A (en) | Production of semiconductor integrated circuit | |
JPS5354983A (en) | Semiconductor ingegrated circuit | |
JPS5370685A (en) | Production of semiconductor device | |
JPS51134082A (en) | Method to manufacture the semiconductor unit | |
JPS5360580A (en) | Etching method of semiconductor material | |
JPS5317283A (en) | Production of semiconductor device | |
JPS5299790A (en) | Semiconductor device | |
JPS5336483A (en) | Manufacture of semiconductor device | |
JPS52109368A (en) | Semiconductor device | |
JPS5275280A (en) | Semiconductor device |