JPS5645070A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5645070A JPS5645070A JP12063579A JP12063579A JPS5645070A JP S5645070 A JPS5645070 A JP S5645070A JP 12063579 A JP12063579 A JP 12063579A JP 12063579 A JP12063579 A JP 12063579A JP S5645070 A JPS5645070 A JP S5645070A
- Authority
- JP
- Japan
- Prior art keywords
- shield layer
- region
- function region
- wiring layers
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 101100535994 Caenorhabditis elegans tars-1 gene Proteins 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a crosstalk free IC without deteriorating integration by providing a shield layer on wiring layers by corresponding to a function region wherein the shield layer is grounded. CONSTITUTION:A region 13 consisting of a function region Trs1 for low frequency operation and a region 14 consisting of a function region Trs2 for high frequency operation are formed respectively on a semiconductor substrate 1 to compose a semiconductor integrated circuit. Next, the first SiO2 film 2 for surface stabilization is formed on one major surface 11 providing the above regions and opening holes are bored by corresponding to the regions 13 and 14. Plural wiring layers 3 contacting with the regions 13 and 14 are formed while expanding the wiring layers 3 on the films 2 in accordance with a predetermined pattern. Then, the whole surface is covered with the second SiO2 film 4 which becomes a layer insulating film and an IC is completed. At that time, a shield layer 5 consisting of a conductive material is provided by positioning the shield layer 5 on the film 4 corresponding to the function region Trs1 and the shield layer 5 is grounded. In this composition, the capacity coupling of the function region Trs2 having no shield layer 5 becomes small and crosstalk as a whole will be minimized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12063579A JPS5645070A (en) | 1979-09-21 | 1979-09-21 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12063579A JPS5645070A (en) | 1979-09-21 | 1979-09-21 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5645070A true JPS5645070A (en) | 1981-04-24 |
Family
ID=14791092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12063579A Pending JPS5645070A (en) | 1979-09-21 | 1979-09-21 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645070A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62203351A (en) * | 1986-03-03 | 1987-09-08 | Nippon Telegr & Teleph Corp <Ntt> | Interconnection structure of integrated circuit |
| US4796084A (en) * | 1985-05-13 | 1989-01-03 | Kabushiki Kaisha Toshiba | Semiconductor device having high resistance to electrostatic and electromagnetic induction using a complementary shield pattern |
| US7157794B2 (en) * | 2002-04-03 | 2007-01-02 | Oki Electric Industry Co., Ltd. | Semiconductor device that suppresses variations in high frequency characteristics of circuit elements |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50102280A (en) * | 1974-01-09 | 1975-08-13 | ||
| JPS53103385A (en) * | 1977-02-22 | 1978-09-08 | Seiko Instr & Electronics Ltd | Integrated circuit for watches |
-
1979
- 1979-09-21 JP JP12063579A patent/JPS5645070A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50102280A (en) * | 1974-01-09 | 1975-08-13 | ||
| JPS53103385A (en) * | 1977-02-22 | 1978-09-08 | Seiko Instr & Electronics Ltd | Integrated circuit for watches |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4796084A (en) * | 1985-05-13 | 1989-01-03 | Kabushiki Kaisha Toshiba | Semiconductor device having high resistance to electrostatic and electromagnetic induction using a complementary shield pattern |
| JPS62203351A (en) * | 1986-03-03 | 1987-09-08 | Nippon Telegr & Teleph Corp <Ntt> | Interconnection structure of integrated circuit |
| US7157794B2 (en) * | 2002-04-03 | 2007-01-02 | Oki Electric Industry Co., Ltd. | Semiconductor device that suppresses variations in high frequency characteristics of circuit elements |
| US7545036B2 (en) | 2002-04-03 | 2009-06-09 | Oki Semiconductor Co., Ltd. | Semiconductor device that suppresses variations in high frequency characteristics of circuit elements |
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