JPS6425481A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To reduce an occupying area on the surface of a semiconductor substrate and to enhance the density by forming source, drain on the sidewall of the substrate, and simultaneously forming the connecting region of the source, drain to connecting wirings of the same silicide layer. CONSTITUTION:A gate insulating film 2, a polycrystalline silicon film 3 and a silicon nitride film 4 are formed on one conductivity type silicon semiconductor substrate 1 (A), and a predetermined first pattern is formed (B). Then, an insulating film 5 is formed on a whole surface, and an insulating film 5 remains on the sidewall of first pattern by an anisotropic dry etching method (C). Thereafter, with the first pattern and the film 5 as masks an opening is formed at the substrate to form a second pattern (D). A silicon nitride film 6 is formed on the sidewall of the second pattern (E), with the films 4, 6 as masks an insulating film 7 is formed on the substrate (F), the films 4, 6 are removed, and a high melting point metal 8 is formed on the whole surface (G). Then, the surface of the film 3 is reacted with the substrate of the sidewall of the opening to form silicide layers 9, 10 as a gate electrode 9 and source, drain electrode regions 10.