Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP10458576ApriorityCriticalpatent/JPS5329675A/en
Publication of JPS5329675ApublicationCriticalpatent/JPS5329675A/en
PURPOSE: To positively obtain fine pattern by using thin metal films such as of W, Ta, Mo, etc. whose etching rate is low and which are easy to be etched by CF4 gas plasma at the time of etching the metal films or insulation films provided on a semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP10458576A1976-08-311976-08-31Production of semiconductor device
PendingJPS5329675A
(en)