JPS559481A - Method of forming fine pattern - Google Patents

Method of forming fine pattern

Info

Publication number
JPS559481A
JPS559481A JP8314178A JP8314178A JPS559481A JP S559481 A JPS559481 A JP S559481A JP 8314178 A JP8314178 A JP 8314178A JP 8314178 A JP8314178 A JP 8314178A JP S559481 A JPS559481 A JP S559481A
Authority
JP
Japan
Prior art keywords
film
substrate
aluminium
pattern
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8314178A
Other languages
Japanese (ja)
Inventor
Sotaro Edokoro
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8314178A priority Critical patent/JPS559481A/en
Publication of JPS559481A publication Critical patent/JPS559481A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To provide a fine space of aluminium by superimposing the first and second pattern space control layers on a substrate, etching the first layer to allow its lower side face to overhang, selectively removing the second layer, and coating aluminium on the substrate exposed under the overhung layer.
CONSTITUTION: On a substrate 1 are coated the first and second pattern space control layers comprising a SiO2 film 2 and a Cr/Au film 3 respectively, and on the film 3 are formed the photoresist film masks 4 having a predetermined spacing each other. The substrate 1 is inserted into an ion etching apparatus to etch it using an argon gas and to form a mountain skirt-shaped film 3 extended under the mask 4. Subsequently, the film 2 is removed deep in the skirt of the film 3 by the chemical etching using a buffer solution of hydrofluoric acid. In such a situation, it is inserted into evaparator to form an aluminium pattern 5 on the substrate portion exposed between the adfacent skirts. Finally, the films 2 and 3, masks 4, and aluminium films 6 are removed leaving a space of aluminium pattern 5 on the substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP8314178A 1978-07-07 1978-07-07 Method of forming fine pattern Pending JPS559481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8314178A JPS559481A (en) 1978-07-07 1978-07-07 Method of forming fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8314178A JPS559481A (en) 1978-07-07 1978-07-07 Method of forming fine pattern

Publications (1)

Publication Number Publication Date
JPS559481A true JPS559481A (en) 1980-01-23

Family

ID=13793921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8314178A Pending JPS559481A (en) 1978-07-07 1978-07-07 Method of forming fine pattern

Country Status (1)

Country Link
JP (1) JPS559481A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927206U (en) * 1982-08-11 1984-02-20 西川ゴム工業株式会社 Expansion joint structure for joints
JPH01239934A (en) * 1988-03-22 1989-09-25 Hikari Gijutsu Kenkyu Kaihatsu Kk Formation of fine pattern

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513880A (en) * 1990-09-20 1993-01-22 Seiko Epson Corp Manufacture of semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513880A (en) * 1990-09-20 1993-01-22 Seiko Epson Corp Manufacture of semiconductor laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927206U (en) * 1982-08-11 1984-02-20 西川ゴム工業株式会社 Expansion joint structure for joints
JPS6338252Y2 (en) * 1982-08-11 1988-10-07
JPH01239934A (en) * 1988-03-22 1989-09-25 Hikari Gijutsu Kenkyu Kaihatsu Kk Formation of fine pattern

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