JPH0774118A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To avoid a mixture of gases in a plurality of reaction chambers in which different reaction treatments are performed and facilitate accurate temperature control in the respective reaction chambers by a method wherein the respective reaction chambers are not directly connected to each other and the temperature of one of the reaction chambers is not transferred to the other chambers. CONSTITUTION:Substrates and a substrate holder 4 move back and forth between a reaction furnace 5 and the first chamber 7 of a first reaction system by the transfer mechanism 12 of the first chamber 7. In the same way, a second and third reaction furnaces, substrates and substrate holders 4 which move back and forth between the respective reaction furnaces and corresponding chambers and transfer mechanisms 29 and 41 are provided. Second and third chambers corresponding to the second and third reaction furnaces are provided in common with the first chamber. A pair of electrodes 2 which generate a plasma discharge are provided outside each reaction furnace 5 and a resistance heater 3 is provided so as to cover the electrodes 2 and the furnace temperature is so controlled as to have an allowable tolerance of + or -1 deg.C for a temperature, for instance 300 deg.C, within an instructed range of 50-350 deg.C. A radio frequency power of 5-200W is supplied to the pair of the electrodes 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor for producing a large amount of stable and reproducible semiconductor devices by a plasma vapor phase method (hereinafter referred to as PCVD) using glow or arc discharge. The present invention relates to a device manufacturing method. The present invention relates to a PCVD apparatus, with respect to a reaction system, without providing electrodes or other jigs in a reaction cylinder into which a reactive gas in a plasma vapor phase method is introduced, a substrate having a surface to be formed and its substrate holder (for example, By introducing only a quartz boat) and making the reactive gas a laminar flow (laminar flow), the film thickness is made uniform, and the film quality also forms a semiconductor film with little variation between batches and between batches. The present invention relates to a method for manufacturing a semiconductor device.

In order to prevent the introduction of such oxygen and moisture into the reaction furnace, the present invention provides a chamber having a mechanism for holding or moving the substrate and the substrate holder, which is connected to the reaction tube, and improves the productivity. The present invention also relates to a method for manufacturing a semiconductor device that has improved the reproducibility of characteristics. Furthermore, the present invention provides a semiconductor device formed by equipping an electrode so that a plasma discharge electric field is applied in parallel to (along) a substrate surface, and an active reactive product is vertically collided with a surface to be formed. Another purpose is to prevent deterioration of the characteristics of the film. In order to prevent the sputtering (damage) on the formation surface, for example, a P-type semiconductor layer is provided on the formation surface and an I-type (intrinsic or substantially intrinsic) semiconductor layer is formed on the upper surface. At this time, the impurities forming the P-type are mixed in the I layer to a concentration of 10 ¹⁷ to 10 ¹⁸ cm ⁻³ , and PI
It will deteriorate the joint. The present invention is presented to prevent such drawbacks.

Furthermore, the present invention provides a first reaction system comprising the above-mentioned reaction system, a first chamber connected to the first reaction system, and a second chamber connected to the first chamber, Further, the present invention relates to a manufacturing apparatus provided with a second reaction system similar to the first reaction system connected to the second chamber. In such a manufacturing apparatus, first, in the first chamber, the substrate and the holder are inserted into the first reaction furnace by the moving mechanism in an atmosphere in which oxygen and water have been removed by vacuuming. Next, in the first reaction furnace, a semiconductor having a conductivity type, for example, a P type conductivity type was formed. Further, the substrate on which the semiconductor is formed is drawn out again into the first chamber, and further, the substrate is similarly transferred to the second chamber connected to the first chamber in a vacuum free from oxygen and moisture. Be moved. Further, the substrate is the second
From the chamber of the first reactor to the second reactor, and the second semiconductor layer on the first semiconductor layer with a conductivity type different from that of the first reactor or a different additive or a different concentration (impurity or additive) thereof. Can be formed.

At this time, since impurities attached to the inner wall of the first reaction furnace are not attached at all when forming the second semiconductor layer, the conductivity is extremely high and the conductivity or Eg (energy is high). Bandwidth) etc. can now be controlled. The present invention further provides three systems of these independent reaction furnaces, which have common chambers, that is, first, second, and
And a manufacturing apparatus connected to each other in the third chamber, in particular, a P-type semiconductor layer in the first reactor, an I-type semiconductor layer in the second reactor, and an N-type semiconductor layer in the third reactor. Is particularly effective when a PIN type diode, particularly a photoelectric conversion device, is to be manufactured by forming

According to the present invention, the reactors are arranged according to the order of the films to be laminated through a chamber common to the number of layers to be laminated, so that the number of stages is not only two or three but four to ten. Can be Thus, PIN,
It is possible to make a junction structure such as PINPIN, PINIPIN, NIPIN, PINIP, ... Further, when the semiconductor layer is manufactured, carbon or germanium is added to a tetravalent element, for example, silicon, and by controlling the addition amount, an optical energy band width (Eg) proportional to the addition amount is obtained. You can have it. For example, PIN junctions as Egp, Egi, Egn
WNW with (Egp> Egi ≧ Egn) (wide Eg-narrow Eg-wide Eg)
It was possible to provide as. Furthermore, this PIN
In the PINPIN structure where two junctions are stacked, Eg
p ₁ , Egi ₁ , Egn ₁ , Egp ₂ , Egi ₂ , Egn ₂ (Egp ₁ > Egn ₁ ≈ Egi ₁
≧ Egp ₂ ≧ Egi ₂ ≧ Egn ₂ ), and Egp ₁ (2.0 to 2.4 eV), E
gn ₁ (1.7 to 2.1 eV) to SixC _1-X (0 <X <1), Egi ₁ , Egp ₁ (1.6 to
1.8eV) with Si, Egi ₂ , Egn ₂ (1.0 to 1.5eV) with SixGe _1-x
It can be set as (0 <X <1). To form such a tandem structure, six reaction systems may be provided.

In addition, as a NIN or PIN junction, MIS / FE
In T and bipolar transistors, there are two reaction systems, the N layer or P layer on the substrate in the first reaction chamber, the next I layer in the second reaction chamber, and the first reaction chamber. Return the substrate holder to the chamber and make the third N or P layer 3
It is possible to create a layered structure with two systems. The present invention is
The purpose is to connect independent reactors to a common chamber without connecting the reactors to each other, and form semiconductor layers formed by different treatments on a substrate through the common chamber.

[0007]

2. Description of the Related Art Generally, in a PCVD apparatus, when using silane or a halide gas of silicon, which is a reactive gas containing silicon having a strong reactive power as a main component, a reaction tube, for example, an inner wall of a quartz glass tube and a holder are used. The adsorbed oxygen (air) and water react with the silicide gas to form silicon oxide (lower silicon oxide), which deteriorates the conductivity as a semiconductor. Conventionally, with respect to a PCVD apparatus, a method is known in which electrodes for capacitive coupling are provided in the form of parallel plates in the upper and lower sides, and the substrate is placed on one of the electrodes, for example, the lower cathode electrode, and heating is performed from below. There is. However, in this method, since the reaction furnace is a chamber, if the P-type, I-type, and N-type semiconductor layers are not stacked, impurities in the N-type semiconductor layer after the first production are 2%. It was mixed in the P-type semiconductor layer in the next process of the first time, became a recombination center and deteriorated the diode characteristics, and further, the characteristics were completely dispersed. Therefore, even if an attempt is made to make a photoelectric conversion device, only an open circuit voltage Voc of 0.2 to 0.6 V can be obtained, and a short circuit current of several mA / cm
^I could only drain ^two . In addition, in this parallel plate type device, since the electric field is in the direction perpendicular to the substrate surface, even if the I layer is not formed after the P type layer, impurities in the P layer are easily mixed in the I layer. It was often the case that the diode characteristics did not appear.

Furthermore, since this reactor does not have a preliminary chamber, oxygen and moisture are adsorbed by adsorbing oxygen and moisture on the inner wall of the reaction furnace every time it is manufactured, so that it is exposed to the atmosphere (air). Exists in the background level during the reaction, so the electric conductivity is also dark and the conductivity is 10 ^-11 to 10 ^-8 (Ωcm).
^The photoconductivity at ^-1 , AM1 was only 10 ^-6 to 10 ^-4 (Ωcm) ^-1 . However, in the present invention using an apparatus in which this adsorbate is not present at all, the dark conductivity is 10 ⁻⁶ to 10 ⁻⁴ , and the photoconductivity at AM1 is 1 × 10 ^{−3 to} 9 × 10 ⁻² (Ωcm). ^It was about -100 times as high as ^-1 and could have semiconductor properties. The present invention is intended to eliminate all the drawbacks of the PCVD apparatus of the parallel plate type-chamber reactor, which has been widely used in the past. Further, as a further improvement of this conventional system, an independent separation type reactor, which is an application of the present applicant, is known. This device is disclosed, for example, in "Semiconductor Device Manufacturing Method", December 10, 1978 (Japanese Patent Application No. 53-152887),
And its divisional application "Semiconductor Device Manufacturing Method" (Japanese Patent Application No. 56
-055608). Further, the details are described in "Coating method", August 16, 1979 (Japanese Patent Application No. 54-104452).

In these inventions, for example, when a diode having a PIN junction is to be manufactured, a first reaction system for a P-type semiconductor layer, a second reaction system for an I-type semiconductor layer, and an N-type
The third reaction system for the semiconductor layer is formed by connecting the respective reaction furnaces (bell jars) with a gate valve. By doing so, the impurities of the P layer are not mixed in the I layer, and the impurities of the N layer are not mixed in the I layer and the P layer. It is characterized in that the so-called semiconductor layers can be completely and accurately controlled. Further, a preliminary chamber is provided in front of the reactor for the P layer or after the reactor for the N layer so as to prevent so-called mixing of oxygen and water vapor from the outside. However, in the application filed by the present applicant, the temperature control of the substrate cannot be sufficiently performed in the vertical bell jar type or the type in which the reaction furnaces of the modification are connected to each other. That is, the set temperature of the reactors connected to each other was about 300 ± 20 ° C.
For this reason, the formed coating film has large variations, which is not preferable. In addition, the number of substrates that can be filled in one reaction furnace was, for example, 1 to 10 in 10 cm ² . For this reason,
The productivity was extremely low, and it could not be said that it was a so-called low price and mass production.

[0010]

In a method of manufacturing a semiconductor device having a plurality of reaction chambers for performing different reaction processes,
Since the substrate for forming the film needs to be moved to the next reaction chamber each time the film forming process is performed, it is usually equipped with a gate valve between the reaction chamber and the next reaction chamber. is there. However, if the reaction chambers are connected by a gate valve as described above, the movement of the substrate is very convenient, but since different reaction treatments are performed, the reactive gas used in the reaction is gated. The problem is that they mix with each other via the valve. In addition, different reaction processes have different reaction temperatures in the reaction chambers, so when the substrate is moved through the gate valve, the reaction chambers next to each other tend to have one temperature, and the precise temperature required for each reaction is set. Hard to get. Further, when the size of the reaction chamber is increased, there is a problem that it becomes difficult to mix the reactive gas or accurately control the temperature.

The present invention has been made to solve the above problems, and when a plurality of reaction chambers for different reaction treatments are continuously formed on a substrate to form a coating film, gas is mixed in the reaction chambers. , And a semiconductor device manufacturing method that enables accurate temperature control in each reaction chamber. Further, the present invention, even if the reaction chamber is large,
An object of the present invention is to provide a homogeneous semiconductor device manufacturing method in which the film forming accuracy does not change between batches.

[0012]

In order to achieve the above object, a semiconductor device manufacturing method according to the present invention comprises a first reaction furnace, a second reaction furnace, and a moving mechanism for holding and moving a plurality of substrates. A first chamber for moving a plurality of substrates from the common chamber to the first reactor, the first chamber and the second reactor being connected to the common chamber. Step, after the first step, a second step of forming a first coating film on the plurality of substrates in the first reaction furnace, and after the second step, the plurality of substrates are placed in the common chamber. A third step of returning, a fourth step of moving the plurality of substrates to a second reactor again after the third step, and a fourth coating on the first coating on the plurality of substrates after the fourth step. A fifth step of forming a second coating on the substrate and, after the fifth step, returning the plurality of substrates to the common chamber again. And a seventh step of removing the reaction products attached to the inner wall of the first reactor and / or the second reactor during the film formation by plasma etching with a fluorine-based gas, if necessary. I have it.
The semiconductor device manufacturing method of the present invention is characterized in that the coating film is formed by a plasma vapor phase method.

The semiconductor device manufacturing method of the present invention includes a first reaction furnace and a second reaction furnace, and a common chamber having a moving mechanism for holding and moving a plurality of substrates, and the common chamber is provided with The first reactor and the second reactor are connected,
A first step of moving the plurality of substrates from the common chamber to the first reaction furnace, and a second step of forming a first coating film on the plurality of substrates in the first reaction furnace after the first step And a third step of returning the plurality of substrates to the common chamber after the second step, and a fourth step of moving the plurality of substrates to a second reaction furnace again after the third step. A fifth step of forming a second coating on the first coating on the plurality of substrates after the fourth step, and returning the plurality of substrates to the common chamber again after the fifth step. A sixth step, a seventh step of moving the plurality of substrates to the first reactor again after the sixth step, and a first step on the second coating after the seventh step. An eighth step of forming the same film as the film, and the eighth step
After the step, the plurality of substrates are returned to the common chamber again.
And a step of removing the reaction product attached to the inner wall of the first reaction furnace and / or the second reaction furnace during the film formation by plasma etching with a fluorine-based gas, if necessary. There is.

[0014]

EXAMPLE FIG. 1 shows an outline of a horizontal type, independent separation type plasma CVD apparatus of the present invention, that is, a semiconductor device manufacturing apparatus.
In FIG. 1, the first reaction system (1) is a cylindrical reactor.
(5) is, for example, transparent quartz (alumina or other ceramics may be used), and its diameter is 100 to 300 mm. Further, a pair of electrodes (2) and (2 ') for performing plasma discharge were arranged outside the reaction furnace (5). This electrode (2),
(2 ') is made of stainless steel, for example, and this electrode (2),
A resistance heating heater (3) is installed to cover (2 '), and
It is controlled with an accuracy of ± 1 ° C for 350 ° C, for example 300 ° C. Substrates and substrate holders are abbreviated with reference numeral (4). The reactive gas (6) is further supplied to the homogenizer (26). The pair of electrodes (2), (2 ') is the power supply for supply (13)
High frequency (10KHz-100MHz, typically 13.56MHz) is supplied by the power of 5-200W. Unnecessary products after the reaction and carrier gas such as helium and hydrogen are exhausted (13)
Rotate the rotary valve by turning the pressure adjusting valve (14) in the reaction tube.
It is discharged by the pump (15). During the reaction, the reaction pressure of the reactor (5) was maintained at 0.05 to 0.6 torr, typically 0.3 torr, and the effective flow rate of the reactive gas was increased to several tens m / sec.

In addition to the first reaction furnace, on the other hand, in the drawing, the substrate and the substrate holder (4) are provided on the inlet side in the reaction furnace (5).
A first chamber (7) having a moving mechanism (12) inserted into or pulled out of the furnace is provided. This room (7)
When the atmospheric pressure is used, high-purity air is supplied from the pressure adjusting valve (14). Ventilation is done by rotating the valve (39).
The pump (37) is evacuated to 0.001 to 0.01 torr. In addition, this substrate and substrate holder (11) are
Moved from (8) to the first chamber (7). This first spare room
At (8), air is introduced from the exhaust port (13) to atmospheric pressure,
Vacuum is made by the valve (40) and pump (38).
The chamber 1 (7) became a low vacuum with an approximately equal pressure. Then, the substrate and the substrate holders (10) and (11) are moved to the first chamber (7). Further, the substrate holder (11) was transferred from the first chamber (7) to the first reaction furnace (5), and a predetermined semiconductor film was formed on the substrate.

Further, after forming this coating, the substrate and the holder (4) reach the electrodes (2) and (2 '), and those to be taken out are taken out from the preliminary chamber (8). You can Furthermore, when a semiconductor layer is to be formed on this, the shutter (32) is opened in the holder (11) and moved to the second chamber (30). This (32) and the shutter (33) of the next stage are not always necessary, and in that case, the common chamber is used as the reactor (5).
Will be provided in succession. Furthermore, the substrate and the substrate holder (4) are transferred to the second reaction system (42),
A second semiconductor layer (eg I layer) is formed on the first semiconductor layer (eg P layer). Such a movement of the substrate and the substrate holder (4) could independently form the film regardless of the history of the previous process.

This second reactor also has a reactive gas inlet (2
Reactive gas enters from 4) and carrier gas and impurities are discharged to the outside through the exhaust port, the valve (14) and the vacuum pump (20). Further, after the second semiconductor film is formed,
The substrate may be taken out to the outside through the second preliminary chamber (35), but in FIG.
A third semiconductor layer, for example, an N-layer semiconductor layer is formed through (43). Further, the substrate on which the third layer is formed and the substrate holder (34) are brought to the atmospheric pressure by introducing air from the exhaust port (13) through the second auxiliary chamber (35) that is evacuated. After that, the gate valve (36) is opened and it is taken out to the outside.

As is clear from the above summary, the present invention is
The first reaction system has a first chamber, and the moving mechanism (12) provided in this chamber causes the substrate and substrate holder (4) to move between the reaction furnace (1) and the first chamber (7). Make a round trip between. Further, it also has second and third reaction furnaces, a holding mechanism for the substrate and the substrate holder (4), and moving mechanisms (29), (41). The first, second, and third chambers are provided in common, and the first and second auxiliary chambers are provided at the front and rear inlet and outlet sides of this common chamber to react oxygen and moisture in the air. It is provided so as not to mix into the system. In this manufacturing equipment, since each reaction is drawn out from the reaction furnace to the first chamber (7) that has been evacuated once, the reactive gas of each reaction system is never mixed into each reaction furnace. . In particular, when opening and closing the valve shutoff valves (52), (53), (54) for the tubes between the reactors and chambers, the substrates and substrate holders (11) (11 ') (11``) are moved by opening and closing. At this time, since the threshold valve is completely closed, impurities of the reaction system are further increased as compared with the case where the reaction systems shown by the applicant in the conventional description are connected to each other by one gate valve. -Todoping has decreased.

In addition, in the above description, the substrate holder (4) moved each reaction chamber together with the substrate. However, this movement is performed only on the substrate, and the holders are the first reactor holder (11), the second reactor holder (11 '), and the third reactor.
It is possible in the manufacturing apparatus of the present invention to dispose the reactor holders (11 ″) of (1) to (3) individually. By doing so, it is possible to completely eliminate the mixing of impurities between the reaction chambers, especially the mixing of PN type or Eg variable impurities and additives adhering to the holder surface. It is a target.

FIG. 2 is a diagram for explaining an embodiment of a gas system of a reactive gas which complements FIG. In FIG. 2, that is, to the first, second, and third reactors, the reactive gas is supplied from the inlet pipes (6), (27), (28), respectively. The reactive gas is shown corresponding to FIGS. 2 (A), (B) and (C). In Fig. 2 (A), diborane (43) diluted with hydrogen, silane (44), an etching gas for the inner wall of the reaction furnace, such as CF ₄ (O ₂ = 0 to 5%), or NF ₃ , an additive of carbide. And a reactive gas formed by combining silicon and carbon, such as TMS (tetramethylsilane Si (CH ₃ ) ₄ ) (46), and hydrogen, which is a carrier gas, or helium (47). These gases are flowmeters (mass meters) (5
0) is supplied to the first reaction furnace through the introduction pipe (6) through the electromagnetic valve (51). In this case, it is made of SixC _1-X (0.2 ≦ X ≦ 1) and the conductivity type is P type. By doing so, P having an Eg (energy gap) of 1.7 to 2.5 eV
A non-single-crystal semiconductor containing a type of amorphous or semi-amorphous structure was formed on a substrate to a thickness of 100 to 300 Å.

The coating is prepared by the patent application “Plasma Vapor Phase Method” filed by the applicant of the present application, October 14, 1981, Japanese Patent Application No. 56-103627.
No.), for example, 250-330.
℃, especially 300 ℃ 0.1 ~ 0.3torr, frequency of plasma generating current 13.56MHz, output 5 ~ 100W, film formation time 10 seconds ~ 10
Minutes The inner wall of the reactor is flaked when it is made 5 to 30 times.
(Flake) occurs, so in this case CF ₄ or NF ₃
It may be removed by plasma etching with. Figure 2
(B) shows the case where a non-single-crystal semiconductor film made of amorphous I layer, semi-amorphous containing microcrystallinity of 5 to 100 Å, or micropolycrystal is produced. That is, silane (45) CF ₄ (O ₂ = 0 to 5
%), Carrier gas helium (47),
Photoconductivity of 1 with silane diluted to 0% with helium
× 10 ^{-3 to} 9 × 10 ^-2 (Ωcm) ^-1 , especially 5 to 20 × 10 ^-3 (Ω
cm) ^-3 for a non-single crystal semiconductor of silicon having a value of 0.4-1 μm
It was manufactured to a thickness of m. Also, FIG. 2 (C) provides N-type impurities such as foshin (48), silane (43), etching gas (45), TMS (46) and carrier gas (40), which is the opposite of FIG. 2 (A). ,
An N-type semiconductor layer of 100 to 500 Å was prepared.

Thus, a PIN diode or photoelectric conversion device was formed on the substrate as shown in FIG. 3 and its characteristics were examined. In FIG. 3 (A), a metal substrate such as stainless steel,
Alternatively, a P-type semiconductor layer (71), I on a substrate (70) having a stainless film formed on a flexible film such as Kapton.
Type semiconductor layer (72) and semiconductor layer (7) consisting of N type semiconductor layer (74)
3) is prepared, and a transparent transparent conductive film such as ITO is formed on this surface.
600 to 800 Å ρ _s = 10 to 25 Ω / □ were manufactured. In the conventional-chamber parallel plate type, AM1 (100mW / cm ² ) is 6 to 7.5%
Although only / 3 mm ² was obtained, 7.5 to 9.5% / 3 mm ² was obtained in the vertical independent separation type according to the applicant's application. However, in the present invention, when the substrate holder (4) is made independent of each reactor, a solar cell with a high conversion efficiency of up to 16% / 3 mm ² , generally 12 to 15% could be produced. Moreover, when the holder was shared by all reactors, the efficiency was as high as 9.0 to 12.5%. This is to prevent the mixture of oxide gas such as oxygen and water from the outside and the mixture of impurities on the surface of each semiconductor.

Furthermore, 50 to 500 10 cm ² substrates can be loaded in one batch, and 10 cm ² 1
The equipment depreciation cost per sheet is 50 to 500 yen in the past, but it can be reduced to 0.2 to 2 yen, which is about 1/100, which is extremely important for the spread of photoelectric conversion devices.
FIG. 3 (B) shows ITO (500) on a transparent substrate (76) such as glass.
~ 800 Å) (78) and tin oxide or antimony oxide (79) (100 ~ 300 Å) low sheet resistance (ρ _s = 5)
~ 20Ω / □ High heat resistance) P-type semiconductor layer (71), I-type semiconductor layer (72), N-type semiconductor layer (74), and back electrode made of aluminum or ITO on the transparent conductive film (77) (75) is provided. Even in this structure, the conversion efficiency is 10 ~
I was able to get 13%. Therefore, when this structure is integrated on a glass substrate and a PIN-type backflow prevention diode is provided at the same time to obtain a solar cell for consumer use with the same output as the conventional one, the area is half that of the conventional one. And the price is 20
0 to 250 yen down to 20 to 30 yen, 100 cm in 10 cm ² area
It became possible to make it for ~ 130 yen.

FIG. 4 is a diagram for explaining the relationship between the substrate, the electrodes and the loading of the substrate arranged in the reaction furnace using the plasma CVD method of the present invention, particularly the glow discharge method. In FIG. 4 (A), the electrodes (2) and (2 ') are parallel to each other in the horizontal direction, and the substrates (61) are closely attached to each other on the back surface, and the front surface is provided at an interval of 20 to 40 mm between the substrates. . The arrangement is also horizontal. The reaction tube (5) of the reaction furnace (1) has a diameter of 100 to 300 mm, typically 180 mm, and its length is 200 to 400 mm. Therefore, a 10 cm substrate is not 8 sheets as shown in the drawing. It was possible to arrange 20 sheets in each stage in 10 to 30 rows. For this reason, 50-
It was possible to make 600 sheets, and with the conventional parallel plate type, it was possible to make an unthinkable amount of semiconductor devices at once. In FIG. 4B, the electrodes (2) and (2 ′) are provided in the vertical direction, the front surface (formation surface) of the substrate (61) is provided in the vertical direction, and the back surfaces are closely contacted with each other. Others are the same as (A).

The loading of the substrate on the holder may be performed by alternately performing steps (A) and (B) shown in FIG. Figure 4 (C)
Is plasma CV using arc discharge method or glow discharge method
D method. The drawing shows one reactor of FIG. 1 (A). That is, it has discharge electrodes (2) and (2 ') in the reaction tube direction, the substrate (61) is loaded on the holder (60), and the heating heater is placed on the outside of the reaction tube (5). (3) is provided. For arc discharge, thermionic emission was performed from one electrode. The reactive gas is introduced through the introduction pipe (6), and unnecessary reaction products and carrier gas are discharged to the outside through the exhaust pipe (63). Since this unnecessary reaction product becomes powdery in the low temperature region, in order to prevent these from being generated inside the reaction furnace (5) (inner wall), the heater (3) has a structure shown in FIG.
All the reaction tubes were covered as indicated by reference numeral (65) shown in (c). By doing so, the powdery reaction product was not left in the reaction tube, and the yield was improved. The same applies to FIG. 1 and FIGS. 4 (A) and 4 (B), which further contributes to the improvement of productivity.

As is clear from the above description, the present invention is
It is possible to combine the batch system and the continuous system by adopting a horizontal reaction system that enables mass production compared to the plasma vapor phase process, and by providing a common chamber in them and manufacturing continuously. It was Therefore, based on this idea, we were able to create two reaction systems, 4 to 8 reaction systems, etc., and for the first time we were able to develop a system that can be mass-produced with a PCVD system. Furthermore, in this semiconductor manufacturing device,
Not only the PIN photoelectric conversion device, but N (0.1 to 1 μ
m) −I (0.2 to 2 μm) −I (0.5 to 1 μm)
It is possible to fabricate a GFET (vertical channel type insulated gate field effect semiconductor device) or a structure in which it is integrated. Furthermore, in this reactor, the width of 2 to 20 cm is 50
It is also possible to arrange a long semiconductor substrate of ~ 100 cm and make a photosensor array or other semiconductor device on the entire upper surface thereof.

[0027]

According to the present invention, the reaction chambers for performing different reaction processes are not directly connected to each other, and after one reaction process is completed, the next different reaction process is performed once via the common chamber. Since a small amount of reactive gas or the like left in the reaction chamber does not mix with each other because it is placed in the reaction chamber, a high quality coating can be produced. According to the present invention, since a plurality of reaction chambers that perform different reaction processes are not directly connected to each other, the temperature does not move from one reaction chamber to the other reaction chamber, and the temperature of the reaction chamber is accurately controlled. be able to. According to the present invention, unnecessary reaction products generated in each reaction chamber can be removed by independent removal devices, and since there is no mixing of the reactive gas, even if the reaction chamber is larger than the conventional one, the quality is improved. High coatings can be produced in large quantities at the same time. According to the present invention, since the common chamber is decompressed by the decompression means and the moving mechanism for moving the substrate is provided, there is no mixing of the reactive gas or the like in the reaction chambers that perform different reaction treatments, and a large amount of substrates are processed at once Can be manufactured quickly.

[Brief description of drawings]

FIG. 1 shows an embodiment of a semiconductor device manufacturing apparatus of the present invention.

2A to 2C are views for explaining an embodiment of a gas system of a reactive gas which complements FIG.

3A and 3B are vertical cross-sectional views of a photoelectric conversion device manufactured according to the present invention.

4 (A) to 4 (C) are views for explaining a relationship between a substrate, an electrode, and a substrate loading placed in a reactor using a plasma discharge method of the present invention, particularly a glow discharge method. Is.

[Explanation of symbols]

 1 ... Reaction system 2, 2 '... Electrode 3 ... Heater 4, 11, 11' ... Substrate holder 5 ... Reactor 6 ... Reactive gas 7 ... 1st chamber 8 ... 1st spare chamber 12 ... Moving mechanism 13 ... Exhaust port 14 ... Pressure adjustment valve 15 ... Rotary pump

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical indication H01L 21/68 A 31/10 H01L 31/10 A

Claims (3)

[Claims] 1. A first reactor and a second reactor, and a common chamber having a moving mechanism for holding and moving a plurality of substrates, wherein the first reactor and the first reactor are provided in the common chamber. A semiconductor device manufacturing method in which two reaction furnaces are connected, the first step of moving a plurality of substrates from the common chamber to the first reaction furnace, and the first reaction furnace after the first step. A second step of forming a first coating film on a plurality of substrates with a second step, a third step of returning the plurality of substrates to the common chamber after the second step, and a second step after the third step. A fourth step of moving the plurality of substrates to the reaction furnace again, a fifth step of forming a second coating on the first coating on the plurality of substrates after the fourth step, and a fifth step A sixth step of returning the plurality of substrates to the common chamber after the step, and the first reactor and / or The semiconductor device manufacturing method characterized by having the plasma etching of fluorine gas and the reaction product adhered to during the film formation on the inner wall of the second reactor, a seventh step of removing as necessary, the. 2. A method for manufacturing a semiconductor device, wherein the film according to claim 1 is formed by a plasma vapor phase method. 3. A first reactor and a second reactor, and a common chamber having a moving mechanism for holding and moving a plurality of substrates, wherein the first reactor and the first reactor are provided in the common chamber. A semiconductor device manufacturing method in which two reaction furnaces are connected, the first step of moving a plurality of substrates from the common chamber to the first reaction furnace, and the first reaction furnace after the first step. A second step of forming a first coating film on a plurality of substrates with a second step, a third step of returning the plurality of substrates to the common chamber after the second step, and a second step after the third step. A fourth step of moving the plurality of substrates to the reaction furnace again, a fifth step of forming a second coating on the first coating on the plurality of substrates after the fourth step, and a fifth step A sixth step of returning the plurality of substrates to the common chamber again after the step, and a plurality of the plurality of substrates again after the sixth step. A seventh step of moving the substrate to the first reactor, an eighth step of forming the same film as the first film on the second film after the seventh step, and an eighth step After that, a ninth step of returning the plurality of substrates to the common chamber again, and a reaction product attached to the inner wall of the first reaction furnace and / or the second reaction furnace during formation of a film by a fluorine-based gas. And a step of removing it by plasma etching as required, and a method of manufacturing a semiconductor device.