JP2626705B2 - Coating method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma vapor phase method utilizing glow or arc discharge (hereinafter, referred to as PCVD).
Accordingly, the present invention relates to a method for producing a film for producing a large number of semiconductor devices stably and with good reproducibility. The present invention provides a substrate having a surface to be formed and a substrate holder (e.g., an electrode or other jig) in a reaction tube into which a reactive gas in a plasma vapor phase method is introduced into a reaction system for a PCVD apparatus. By introducing only a quartz boat) and letting the reactive gas be laminar flow (laminar flow),
The present invention relates to a method for producing a coating film for forming a semiconductor film having a uniform thickness and a uniform film quality within and between batches.

According to the present invention, in order to prevent such oxygen and moisture from being introduced into a reaction furnace, a chamber having a mechanism for holding or moving a substrate and a substrate holder connected to the reaction tube is provided to improve the productivity. And a method for producing a film that has improved the reproducibility of characteristics. Further, the present invention provides a semiconductor device comprising an electrode provided so that a plasma discharge electric field is applied in parallel (along) to a substrate surface, wherein an active reactive product collides with a surface to be formed in a vertical direction. Another object of the present invention is to prevent the properties of the film from deteriorating. Sputtering (damage) on this surface
Prevention, for example, by providing a P-type semiconductor layer on the formation surface,
When an I-type (intrinsic or substantially intrinsic) semiconductor layer is to be formed on the upper surface thereof, the impurity constituting P-type
It mixes into the I layer at a concentration of ¹⁷ to 10 ¹⁸ cm ⁻³ and deteriorates the PI junction. The present invention has been made in order to prevent such a disadvantage.

Further, the present invention provides a first reaction system comprising the above-described reaction system, a first chamber connected to the first reaction system, and a second chamber connected to the first chamber. Further, the present invention relates to a film forming apparatus provided with a second reaction system similar to the first reaction system connected to the second chamber. Such a film production apparatus is
First, in the first chamber, the substrate and the holder are inserted into the first reaction furnace by a transfer mechanism in an atmosphere from which vacuum and oxygen and moisture have been removed. Next, in the first reactor, a semiconductor having a negative conductivity type, for example, a P-type conductivity type was formed. Further, the substrate on which the semiconductor is formed is drawn out to the first chamber again, and further, the substrate is
It is also moved to a second chamber connected to the first chamber in a vacuum free of oxygen and moisture. Further, the substrate is introduced from the second chamber into the second reaction furnace, and the second reaction furnace has a different conductivity type or a different additive from the first reactor, or a different concentration (impurity or additive) thereof. First semiconductor layer
On the semiconductor layer.

At this time, since impurities adhering to the inner wall of the first reactor do not adhere at all when the second semiconductor layer is formed, the accuracy is extremely high, and the conductivity, conductivity, or Eg (energy) is high. Band width) can be controlled. The present invention further provides a film forming apparatus in which three independent reactors are provided and connected to each other in a common chamber, that is, the first, second, and third chambers, and in particular, in the first reactor. When forming a P-type semiconductor layer, an I-type semiconductor layer in a second reactor, and an N-type semiconductor layer in a third reactor to produce a PIN diode, particularly a photoelectric conversion device. Especially effective.

According to the present invention, the number of stages is not limited to two or three, but from four to ten, by providing a reactor in the order of the layers to be laminated through a common chamber according to the number of the layers to be laminated. Can be Thus, PIN,
Join structures such as PINPIN, PINIPIN, NIPIN, PINIP,... In addition, at the time of manufacturing this semiconductor layer, by adding carbon or germanium to a tetravalent element, for example, silicon, and controlling the addition amount, an optical energy bandwidth (Eg) proportional to the addition amount and corresponding to the addition amount is obtained. You can have it. For example, if the PIN junction is Egp, Egi, Egn
WNW (Egp> Egi ≥ Egn) (Wide Eg-Narrow Eg-Wide Eg)
It was possible to provide as. Furthermore, this PIN
In the PINPIN structure where two junctions are stacked, Eg
_{p 1, Egi 1, Egn 1} , Egp 2, Egi 2, Egn 2 (Egp 1> Egn 1 ≒ Egi
₁ ≧ Egp ₂ ≧ Egi ₂ ≧ Egn ₂ ), Egp ₁ (2.0 to 2.4 eV),
Egn ₁ (1.7 to 2.1 eV) is converted to SixC _1-X (0 <X <1), Egi ₁ , Egp ₁ (1.6
～1.8EV) by the Si, Egi _2, Egn ₂ a (1.0 ~1.5eV) SixGe
It can be provided as _1-x (0 <X <1). In order to obtain such a tandem structure, six reaction systems may be provided.

[0006] MIS-FET as NIN or PIN junction
, A bipolar transistor has two reaction systems, an N layer or a P layer on a substrate in a first reaction chamber, a next I layer in a second reaction chamber, and a first reaction chamber. Returning the substrate holder to the third step to produce the third N layer or P layer 3
It is possible to make a layered structure in two systems. The present invention
It is an object of the present invention to connect independent reactors to a common chamber without connecting the reactors to each other, and to form a semiconductor layer manufactured by different processes on a substrate through the common chamber.

[0007]

2. Description of the Related Art In general, when a silane or silicon halide gas, which is a reactive gas containing silicon as a main component, having a strong reactive power is used in a PCVD apparatus, a reaction tube, for example, an inner wall of a quartz glass tube and a holder are used. The adsorbed oxygen (air) and moisture react with the silicide gas to form silicon oxide (lower silicon oxide), thereby deteriorating the conductivity as a semiconductor. Conventionally, as for a PCVD apparatus, a method is known in which capacitively coupled electrodes are provided in the form of a parallel plate on the upper and lower sides, and a substrate is arranged on one of the electrodes, for example, a lower cathode electrode, and heated from below. I have. However, in this method, since the reaction furnace is a single chamber, if the P-type, I-type, and N-type semiconductor layers are laminated, the impurity in the N-type semiconductor layer after the first production is 2%. It was mixed into the P-type semiconductor layer in the next step, and became a recombination center, deteriorating the diode characteristics, and the characteristics were completely varied. For this reason, even if an attempt is made to make a photoelectric conversion device, only its open voltage Voc of 0.2 to 0.6 V is obtained, and the short-circuit current is reduced to several mA / cm.
Only ^two could be shed. In addition, in this parallel plate type device, since the electric field is perpendicular to the substrate surface, even if an I layer is formed after the P type layer, impurities of the P layer are easily mixed into the I layer, In many cases, no diode characteristics were obtained.

Further, since this reactor does not particularly have a preparatory chamber, the inner wall of the reactor is exposed to the atmosphere (air) each time it is manufactured, so that oxygen and moisture are adsorbed and the adsorbed oxides are adsorbed. Is present at the background level during the reaction, the electrical conductivity is also dark and the conductivity is 10 ^-11 to 10 ^-8 (Ωcm)
^-1 and photoconductivity at AM1 were only 10 ^-6 to 10 ^-4 (Ωcm) ^-1 . However, in the present invention using an apparatus in which this adsorbate does not exist at all, the dark conductivity is 10 ⁻⁶ to 10 ⁻⁴ , and the photoconductivity at AM1 is 1 × 10 ^{−3 to} 9 × 10 ⁻² (Ωcm). ^It was about 100 times higher than ^-1 and could have semiconducting properties. The present invention has been made to eliminate all the drawbacks of the PCVD apparatus of a parallel plate type single-chamber reactor which is conventionally used in many cases. Further, as a further improvement of the conventional system, there is known an independent separation type reactor which is an application filed by the present applicant. This apparatus is described in, for example, "Method for Manufacturing Semiconductor Device", December 10, 1978 (Japanese Patent Application No. 53-152887),
And its divisional application "Method of Manufacturing Semiconductor Devices" (Japanese Patent Application No. 56
-055608). Further details are described in "Coating preparation method", August 16, 1979 (Japanese Patent Application No. 54-104452).

According to these inventions, for example, when a diode having a PIN junction is to be manufactured, a first reaction system for a P-type semiconductor layer, a second reaction system for an I-type semiconductor layer, and
The third reaction system for the mold semiconductor layer is obtained by connecting respective reaction furnaces (bell jars) by gate valves. Thus, the impurities of the P layer do not mix with the I layer, and the impurities of the N layer do not mix with the I layer and the P layer. It is characterized in that impurity control in each semiconductor layer can be performed completely accurately. Further, a preparatory chamber is provided in front of the reactor for the P layer or after the reactor for the N layer to prevent so-called external mixing of oxygen and water vapor. However, in the application filed by the present applicant, in the vertical bell jar type or the type in which the reaction furnaces of the modified type are connected to each other, the substrate temperature cannot be sufficiently controlled. That is, the set temperatures of the reactors connected to each other have been about 300 ± 20 ° C.
For this reason, the variation of the formed film is large, which is not preferable. In addition, the number of substrates that can be filled in one reaction furnace was, for example, 1 to 10 in 10 cm ² . For this reason,
The productivity was extremely low, so it could not be said that it was so-called low-priced, mass-produced.

[0010]

SUMMARY OF THE INVENTION In a method for manufacturing a semiconductor device having a plurality of reaction chambers for performing different reaction processes,
Since a substrate for forming a film needs to be moved to the next reaction chamber every time the film formation process is performed, a gate valve is usually provided between the reaction chamber and the next reaction chamber. is there. However, when the reaction chambers are connected to each other by the gate valve as described above, the movement of the substrate is very convenient, but since different reaction processes are performed, the reactive gas used for the reaction is gated. It has the problem of intermingling with one another via the valve. In addition, since different reaction processes have different reaction temperatures in the reaction chambers, when the substrate is moved through the gate valve, the adjacent reaction chambers tend to be at one temperature, and the exact temperature required for each reaction is determined. Difficult to obtain. Further, when the size of the reaction chamber is increased, there is a problem that mixing of the reactive gas or accurate control of the temperature becomes difficult.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. When a plurality of reaction chambers performing different reaction treatments are successively formed on a substrate, mixing of gases in the reaction chambers is performed. And a method of manufacturing a semiconductor device which enables accurate control of temperature in each reaction chamber. Also, the present invention, even if the reaction chamber is enlarged,
It is an object of the present invention to provide a uniform method for manufacturing a semiconductor device in which there is no change in film formation accuracy between batches.

[0012]

To achieve SUMMARY OF for the] said object, the film manufacturing method of the present invention, independent heating means
And a first reactor and a second reactor having independent exhaust means, respectively, is connected independent through one entrance to said each reactor, the substrate relative to each reactor A common chamber having a substrate moving mechanism for moving the substrate in and out, and an exhaust unit; a first step of moving the substrate from the common chamber to the first reaction furnace; A second step of forming a first film on the substrate in the first reactor, a third step of returning the substrate to the common chamber after the second step,
After the step, a fourth step of moving the substrate again to a second reactor, and after the fourth step, a fifth step of forming a second coating on the first coating on the substrate; after the fifth step, a sixth step of again returning the substrate to the common chamber, or
It is characterized by comprising. Coating on the film manufacturing method of the present invention, the coating manufacturing method characterized in that it is formed by a plasma gas phase method.

[0013] coating manufacturing method of the present invention, independent heating hands
A first reactor, a second reactor, and a third reactor, each having a stage and independent exhaust means, connected to each of the reactors via one independent inlet and outlet, and each reactor comprises a single common chamber having a substrate transfer mechanism and the exhaust means to and out of the substrate with respect to a first step of moving the substrate into the first reactor from the common chamber A second step of forming a first coating on the substrate in the first reactor after the first step;
After the second step, a third step of returning the substrate to the common chamber, after the third step, a fourth step of moving the substrate again to a second reactor, and after the fourth step A fifth step of forming a second film on the first film on the substrate, a sixth step of returning the substrate to the common chamber after the fifth step, and a step of A seventh step of moving the substrate to the first or third reactor again, and after the seventh step, depositing the same or third coating as the first coating on the second coating . An eighth step of forming, and a ninth step of returning the substrate to the common chamber after the eighth step are provided.

[Operation] In the present invention, each reactor is independently operated.
Since the heating means is provided upright and connected to each reactor via one independent inlet / outlet, the temperature of each reactor must be accurately controlled without mixing.
Can be. As a result, the thickness and quality of the coating are more consistent.
A stable and improved product is obtained. The present invention provides each of the above countermeasures.
A substrate moving mechanism for moving substrates into and out of the furnace
Because it does not pass through the plate holder,
The quality of the film can be improved.

[0014]

FIG. 1 shows an outline of a horizontal, independent separation type plasma CVD apparatus of the present invention, that is, a semiconductor device manufacturing apparatus.
In FIG. 1, a first reaction system (1) is a cylindrical reactor.
(5) For example, transparent quartz (alumina or other ceramics may be used) having a diameter of 100 to 300 mm. Further, a pair of electrodes (2) and (2 ') for performing a plasma discharge were arranged outside the reactor (5). This electrode (2),
(2 ′) is made of, for example, a stainless steel rope, and the electrodes (2),
Provide a resistance heating heater (3) over (2 '), and
It is controlled with an accuracy of ± 1 ° C for 350 ° C, for example, 300 ° C. The substrate and the substrate holder are abbreviated by reference numeral (4). The reactive gas (6) is further supplied to the homogenizer (26). A pair of electrodes (2) and (2 ') are used as a power supply (13).
To supply a high frequency (10 KHz to 100 MHz, typically 13.56 MHz) with a power of 5 to 200 W. Unnecessary products after the reaction and carrier gas such as helium and hydrogen are exhausted (13)
Through the pressure adjusting valve (14) in the reaction tube.
Discharged by pump (15). During the reaction, the reactor (5) was maintained at a reaction pressure of 0.05 to 0.6 torr, typically 0.3 torr, and increased the effective flow rate of the reactive gas to several tens of m / sec.

In addition to the first reactor, on the other hand, a substrate and a substrate holder (4) are provided on the inlet side in the drawing, in the reactor (5).
A first chamber (7) having a moving mechanism (12) inserted into or drawn out of the furnace from the inside is provided. This room (7)
When the atmospheric pressure is set, high-purity air is supplied from the pressure adjusting valve (14). Ventilation is rotary through valve (39).
The pump (37) is evacuated to 0.001 to 0.01 torr. The substrate and the substrate holder (11) are
From (8), it is moved to the first room (7). This first spare room
In (8), air is introduced from the exhaust port (13) and becomes atmospheric pressure,
Vacuum is drawn by the valve (40) and the pump (38).
The chamber 1 (7) became almost equal pressure and a sufficiently low vacuum. Then, the substrate and the substrate holders (10) and (11) are moved to the first chamber (7). Further, the substrate holder (11) was transferred from the first chamber (7) to the first reaction furnace (5), and a predetermined semiconductor film was formed on the substrate.

Further, after this film is formed, the substrate and the holder (4) reach the electrodes (2) and (2 '), and those to be taken out are taken out from the spare chamber (8). Can be. Further, when a semiconductor layer is to be formed thereon, a shutter (32) is opened in the holder (11), and the holder (11) is moved to the second chamber (30). This (32) and the next stage shutter (33) are not always necessary, in which case the common chamber is connected to the reactor (5).
Are provided continuously. Still further, the substrate and the substrate holder (4) are transferred to a second reaction system (42),
A second semiconductor layer (for example, an I layer) is formed on the first semiconductor layer (for example, a P layer). Such movement of the substrate and the substrate holder (4) could form a coating independently irrespective of the history of the previous process.

This second reactor also has a reactive gas inlet (2).
4) The reactive gas enters, and the carrier gas and impurities are discharged to the outside via the exhaust port, the valve (14), and the vacuum pump (20). Further, after the second semiconductor film is formed,
The substrate may be taken out to the outside through the second preparatory chamber (35), but in FIG.
After (43), a third semiconductor layer, for example, an N-layer semiconductor layer is formed. Further, the substrate on which the third layer is formed and the substrate holder (34) are brought to atmospheric pressure by introducing air from the exhaust port (13) through the evacuated second preliminary chamber (35). After that, the gate valve (36) is opened and taken out.

As is apparent from the above summary, the present invention provides:
The first reaction system has a first chamber, and a substrate and a substrate holder (4) are moved between the reaction furnace (1) and the first chamber (7) by a moving mechanism (12) provided in the first chamber. Go back and forth between Further, it also has second and third reaction furnaces, holding the substrate and the substrate holder (4), and moving mechanisms (29) and (41). The first, second and third chambers are provided in common, and oxygen and moisture in the air react in the first and second spare chambers at the inlet and outlet sides before and after this common chamber. It is provided so as not to be mixed into the system. In this manufacturing apparatus, since the reaction chamber is drawn into the first chamber (7) which is once evacuated once for each reaction, the reactive gas of each reaction system is not mixed at all into each reaction furnace. . In particular, the substrate and substrate holders (11), (11 ') and (11'') move when opening and closing the threshold valves (52), (53), and (54) for the pipes between each reactor and chamber. At this time, since the threshold valve is completely closed, impurities in the reaction system are further reduced as compared with the case where the respective reaction systems shown by the present applicant in the conventional explanation are connected to each other by one gate valve. -Less doping.

In addition, in the above description, the substrate holder (4) moves each reaction chamber together with the substrate. However, this movement is performed only on the substrate, and the holders are the first reaction furnace holder (11), the second reaction furnace holder (11 '), and the third reaction furnace holder (11').
It is possible in the manufacturing apparatus of the present invention to arrange the reactor holder (11 '') exclusively for each. By doing so, it is possible to completely remove the contamination of impurities between the reaction chambers, especially the contamination of PN type or Eg variable impurities and additives adhering to the holder surface. It is typical.

FIG. 2 is a view for explaining an embodiment of a reactive gas system which complements FIG. In FIG. 2, that is, the reactive gas is supplied to the first, second, and third reactors through the inlet pipes (6), (27), and (28). The reactive gas is shown corresponding to FIGS. 2 (A), (B) and (C). In FIG. 2 (A), diborane (43), silane (44) diluted with hydrogen, an etching gas for the inner wall of the reactor, for example, CF ₄ (O ₂ = 0 to 5%), or NF ₃ , an additive of carbide A reactive gas in which silicon and carbon are combined, for example, TMS (tetramethylsilane Si (CH ₃ ) ₄ ) (46), and hydrogen or helium (47) as a carrier gas are disposed. These gases are supplied by a flow meter (mass flow meter) (5
0), and is supplied to the first reaction furnace from the introduction pipe (6) via the electromagnetic valve (51). In this case, the conductivity type is made of SixC _1-X (0.2 ≦ X ≦ 1) and is P-type. Thus, a P having an Eg (energy gap) of 1.7 to 2.5 eV can be obtained.
A non-single-crystal semiconductor including a type amorphous or semi-amorphous structure was formed on a substrate to a thickness of 100 to 300 mm.

The preparation of the coating film is carried out according to the patent application “plasma gas phase method” filed by the present applicant.
No.), for example, 250-330
℃, especially 300 ℃ 0.1 ~ 0.3torr, current frequency for plasma generation 13.56MHz, output 5 ~ 100W, film formation time 10 seconds ~ 10
Minutes. When the inner wall of the reactor is made 5 to 30 times,
(Flakes), CF ₄ or NF ₃
May be removed by plasma etching. FIG.
(B) shows the case where a non-single-crystal semiconductor film made of an amorphous I layer, a semi-amorphous material having microcrystallinity of 5 to 100 °, or a micropolycrystal is formed. That is, silane (45) CF ₄ (O ₂ = 0 to 5
%), Consisting of helium (47) as a carrier gas,
Photoconductivity of 1 with silane diluted to 0% with helium
× 10 ^{-3 to} 9 × 10 ^-2 (Ωcm) ^-1 , especially 5 to 20 × 10 ^-3 (Ωcm
cm) ^-3 of a silicon non-single-crystal semiconductor having a value of
m. Also, FIG. 2 (C) provides N-type impurities phosphine (48), silane (43), etching gas (45), TMS (46) and carrier gas (40), contrary to FIG. 2 (A). ,
An N-type semiconductor layer having a thickness of 100 to 500 Å was formed.

Thus, a PIN type diode or a photoelectric conversion device was formed on a substrate as shown in FIG. 3 and its characteristics were examined. In FIG. 3A, a metal substrate such as stainless steel,
Alternatively, a P-type semiconductor layer (71) is formed on a substrate (70) having a stainless film formed on a flexible film such as Kapton.
Semiconductor layer (72) and a semiconductor layer (7
3) is prepared, and a transparent transparent conductive film such as ITO is
_{600 ~800 Å ρ s = 10~25Ω /} □ was prepared. The parallel plate of a conventional over-chamber, from 6 to 7.5% by AM1 (100mW / cm ²⁾
/ 3 mm ² had only, but in vertical independent separation type the present applicant, 7.5 ~9.5% / 3mm ² was obtained. However, in the present invention, when the substrate holder (4) is made independent of each reactor, a solar cell having a high conversion efficiency of up to 16% / 3mm ² , generally 12 to 15%, could be produced. When the holder was used in common for each reactor, the efficiency was as high as 9.0 to 12.5%. This is because oxide gas such as oxygen and moisture is prevented from being mixed in from outside, and impurities are prevented from being mixed into each semiconductor surface and the like.

[0023] In addition, in one batch, also 50 to 500 sheets of the board of 10cm ² Russia - is capable of loading, 10cm ² 1
The facility depreciation cost per sheet is extremely important for dissemination of photoelectric conversion devices in that it can be reduced from about 50 to 500 yen in the past to about 0.2 to 2 yen to about 1/100.
FIG. 3 (B) shows an ITO (500) on a light transmitting substrate (76) such as glass.
800800800) (78), and a low sheet resistance (ρ _s = 5) made of tin oxide or antimony oxide (79) (100-300Å).
P-type semiconductor layer (71), I-type semiconductor layer (72), N-type semiconductor layer (74), and back electrode made of aluminum or ITO on transparent conductive film (77 Ω / □ high heat resistance) (75) is provided. Even in such a structure, the conversion efficiency is 10 to
13% could be obtained. For this reason, if this structure is integrated on a glass substrate, and at the same time a PIN-type backflow prevention diode is provided to obtain a consumer-use solar cell with the same output as the conventional one, the area is reduced by half compared to the conventional one. And the price is 20
The 0-250 yen down to 20 to 30 yen, 100 in the area of 10cm ²
It can be made for ~ 130 yen.

FIG. 4 is a view for explaining the relationship between a substrate, an electrode, and the loading of a substrate arranged in a reactor using a glow discharge method in the plasma CVD method of the present invention. In the drawing, FIG. 4 (A) shows the electrodes (2) and (2 ') parallel to the horizontal direction, and the substrate (61) having the back surface closely contacted with each other and the front surface provided with a spacing of 20 to 40 mm between the substrates. . The arrangement is also horizontal. The reaction tube (5) of the reaction furnace (1) has a diameter of 100 to 300 mm, typically 180 mm, and a length of 200 to 400 mm. 20 pieces in each stage could be arranged in 10 to 30 rows. For this reason, 50-
A total of 600 semiconductor devices could be manufactured, and the conventional parallel-plate method could produce an unexpectedly large number of semiconductor devices at once. In FIG. 4B, the electrodes (2) and (2 ') are provided in a vertical direction, the surface (formation surface) of the substrate (61) is provided in a vertical direction, and the back surfaces are provided in close contact with each other. Others are the same as (A).

The loading of the substrate onto the holder may be performed by alternately performing steps (A) and (B) shown in FIG. Fig. 4 (C)
Is a plasma CV using the arc discharge method or the glow discharge method
D method. The drawing shows one reactor of FIG. 1 (A). That is, the discharge electrodes (2) and (2 ') are provided in the direction of the reaction tube, the substrate (61) is loaded on the holder (60), and a heating heater is provided outside the reaction tube (5). (3) is provided. For arc discharge, thermionic electrons were emitted from one of the electrodes. The reactive gas is introduced through the introduction pipe (6), and unnecessary reaction products and carrier gas are released to the outside through the exhaust pipe (63). Since this unnecessary reaction product becomes powdery in the region where the temperature is low, the heater (3) is connected to the heater (3) as shown in FIG. 4 to prevent it from being generated in the reaction furnace (5) (inner wall).
The entirety of the reaction tube was covered as indicated by reference numeral (65) shown in (c). Thus, the reaction product in the form of powder does not remain in the reaction tube, and the yield is improved. 1 and FIGS. 4 (A) and 4 (B), the same effect was obtained to further improve the productivity.

As is clear from the above description, the present invention provides
A horizontal reaction method that enables mass production compared to the plasma gas phase method is adopted, and a common chamber is provided in each of them, and the structure is manufactured continuously, so that the batch method and the continuous method can be combined. Was. For this reason, based on this concept, two reaction systems, four to eight reaction systems, and the like could be created, and for the first time, a system that could be mass-produced with a PCVD apparatus could be developed. Further, in this semiconductor manufacturing apparatus,
Not only PIN photoelectric conversion device, but N (0.1 ~ 1μ
m) −I (0.2 to 2 μm) −I (0.5 to 1 μm)
It is possible to make a GFET (vertical channel insulated gate field effect semiconductor device) or an integrated structure thereof. In addition, 50 to 2 cm wide
It is also possible to dispose a long semiconductor substrate of about 100 cm 2 and make a photosensor array and other semiconductor devices on the entire upper surface thereof.

[0027]

According to the present invention, reactors for performing different reaction processes are not directly connected to each other, and after one reaction process is always completed, the reactors are connected to the reactor through one independent entrance / exit. Since it passes through one connected common chamber and enters the reaction furnace where the next different reaction processing is performed, slight reactive gases and the like left in the reaction furnace do not mix with each other, so that a high quality coating is produced. be able to. According to the present invention, each reactor is provided with independent heating means.
In addition, since a plurality of reactors that perform different reaction processes are not directly connected to each other, the temperature does not shift from one reactor to the other, and the temperature of the reactor can be accurately controlled. . According to the present invention, unnecessary reaction products generated in each reactor can be removed by independent removal devices, and the mixing of the reactive gas does not occur. High coatings can be produced simultaneously in large quantities. According to the present invention,
Since the common chamber is evacuated by the exhaust means and a moving mechanism for moving the substrate is provided, there is no mixing of reactive gases and the like in the reactors performing different reaction processes, and a large amount of substrates can be quickly manufactured at once. . According to the invention
Then, the substrate moving mechanism can be directly
Contact of substrate and substrate holder to move substrate
No parts, can improve the quality of the coating surface
You.

[Brief description of the drawings]

FIG. 1 shows an embodiment of a semiconductor device manufacturing apparatus according to the present invention.

FIGS. 2A to 2C are diagrams for explaining an embodiment of a reactive gas system that complements FIG. 1;

FIGS. 3A and 3B are longitudinal sectional views of a photoelectric conversion device manufactured according to the present invention.

4 (A) to 4 (C) are diagrams for explaining a plasma CVD method of the present invention, in particular, a relation between a substrate, an electrode and a substrate loaded in a reactor using a glow discharge method. It is.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Reaction system 2, 2 '... Electrode 3 ... Heater 4, 11, 11' ... Substrate holder 5 ... Reaction furnace 6 ... Reactive gas 7 ... 1st chamber 8 First Preparatory Chamber 12 Moving Mechanism 13 Exhaust Port 14 Pressure Adjusting Valve 15 Rotary Pump

Claims (3)

(57) [Claims] 1. Independent heating means and independent exhaust means
A first reactor and a second reactor having stages respectively, the which is connected independent through one entrance to each reactor, to and out of the substrate relative to each reactor A film forming method, comprising: a common chamber having a substrate moving mechanism and an exhaust unit, wherein a substrate is moved from the common chamber to the first reaction furnace.
A step of forming a first coating on the substrate in the first reactor after the first step, and a third step of returning the substrate to the common chamber after the second step And after the third step, a fourth step of moving the substrate again to a second reactor, and after the fourth step, forming a second film on the first film on the substrate. a fifth step, the after the fifth step, the film manufacturing method characterized by having a sixth step of returning to the common chamber with the substrate again. 2. A method for producing a film, wherein the film according to claim 1 is formed by a plasma vapor phase method. 3. An independent heating means and an independent exhaust means.
First reactor having stages respectively, and the second reactor and the third reactor, which is connected independent through one entrance to the respective reactor, with respect to each of the reactor A film forming method comprising: a common chamber having a substrate moving mechanism for moving a substrate in and out; and a common chamber having an exhaust unit, wherein a first chamber for moving the substrate from the common chamber to the first reaction furnace is provided.
A step of forming a first coating on the substrate in the first reactor after the first step, and a third step of returning the substrate to the common chamber after the second step And after the third step, a fourth step of moving the substrate again to a second reactor, and after the fourth step, forming a second film on the first film on the substrate. A fifth step, after the fifth step, a sixth step of returning the substrate to the common chamber, and after the sixth step, the substrate is returned to the first or third state again .
A seventh step of moving to the reaction furnace of the above, after the seventh step, an eighth step of forming the same film as the first film or a third film on the second film , and the eighth step film manufacturing method characterized in that after, having, a ninth step of returning the substrate to the common chamber.