JPS5742331A - Manufacture for deposited film - Google Patents
Manufacture for deposited filmInfo
- Publication number
- JPS5742331A JPS5742331A JP11737180A JP11737180A JPS5742331A JP S5742331 A JPS5742331 A JP S5742331A JP 11737180 A JP11737180 A JP 11737180A JP 11737180 A JP11737180 A JP 11737180A JP S5742331 A JPS5742331 A JP S5742331A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- deposited
- heater
- power source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Abstract
PURPOSE:To deposite a film of high quality onto a substrate at a high speed by a method wherein a gaseous material introduced into an evacuated vessel is decomposed by both electric discharge energy and heat energy. CONSTITUTION:The gaseous material such as SiH4, Si2H6 or the like for depositing a film is introduced into a deposition chamber 101 evacuated to a predetermined degree of vacuum, and after heating the substrate 105 by a heating means 107, a high- frequency power source 103 and a power source 109 for a heater 108 are turned ON. Then, a glow discharge is induced between electrodes 104-1, 104-2 to form an atmosphere of a plasma, which is further heated by the heater 108. When a film is deposited on the substrate 105 by this method, the film uniform and excellent quality and can be deposited at a high speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11737180A JPS5742331A (en) | 1980-08-26 | 1980-08-26 | Manufacture for deposited film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11737180A JPS5742331A (en) | 1980-08-26 | 1980-08-26 | Manufacture for deposited film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5742331A true JPS5742331A (en) | 1982-03-09 |
JPS6319210B2 JPS6319210B2 (en) | 1988-04-21 |
Family
ID=14709996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11737180A Granted JPS5742331A (en) | 1980-08-26 | 1980-08-26 | Manufacture for deposited film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5742331A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60104955A (en) * | 1983-11-11 | 1985-06-10 | Hitachi Koki Co Ltd | Electrophotographic image forming member |
JPH02222853A (en) * | 1988-10-08 | 1990-09-05 | Honda Motor Co Ltd | Ultrasonic radar |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
-
1980
- 1980-08-26 JP JP11737180A patent/JPS5742331A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60104955A (en) * | 1983-11-11 | 1985-06-10 | Hitachi Koki Co Ltd | Electrophotographic image forming member |
JPH02222853A (en) * | 1988-10-08 | 1990-09-05 | Honda Motor Co Ltd | Ultrasonic radar |
Also Published As
Publication number | Publication date |
---|---|
JPS6319210B2 (en) | 1988-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0049032B1 (en) | Coating insulating materials by glow discharge | |
ATE212750T1 (en) | MICROWAVE FEEDED DEPOSITION PROCESS WITH CONTROL OF THE SUBSTRATE TEMPERATURE. | |
JPS6417870A (en) | Manufacture of carbon | |
JPS5730325A (en) | Manufacture of amorphous silicon thin film | |
JPS5742331A (en) | Manufacture for deposited film | |
JPS55151328A (en) | Method and apparatus for fabricating hydrogen-containing amorphous semiconductor film | |
ES8603114A1 (en) | Cathode assembly for glow discharge deposition apparatus. | |
JPS54155046A (en) | Method of manufacturing electrophotographic image forming material | |
JPS6147645A (en) | Formation of thin film | |
JPS5721813A (en) | Forming method for film | |
JPS57123969A (en) | Formation of zinc oxide film by vapor phase method using plasma | |
JPS565971A (en) | Film forming method | |
JPS57104226A (en) | Plasma vapor phase growing apparatus | |
JPS57113214A (en) | Manufacture of amorphous semiconductor film | |
JPS56169770A (en) | Ionic plating device | |
JPS57118635A (en) | Manufacture of semiconductor device | |
JPH0111721Y2 (en) | ||
JPS5727914A (en) | Manufacture of thin silicon carbide film | |
JPS57208181A (en) | Manufacture of photoelectric conversion film | |
JPS612734B2 (en) | ||
JPS5663821A (en) | Manufacture of zinc oxide film | |
JPS5458431A (en) | Speaker diaphragm and production of the same | |
JPS56140021A (en) | Manufacture of silicon carbide thin film | |
JPS573831A (en) | Vacuum metallizing method | |
JPS5730323A (en) | Device and method for molecular beam epitaxy |