JPS56169770A - Ionic plating device - Google Patents
Ionic plating deviceInfo
- Publication number
- JPS56169770A JPS56169770A JP7141680A JP7141680A JPS56169770A JP S56169770 A JPS56169770 A JP S56169770A JP 7141680 A JP7141680 A JP 7141680A JP 7141680 A JP7141680 A JP 7141680A JP S56169770 A JPS56169770 A JP S56169770A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- substrate holder
- vapor source
- ionic
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To obtain an ionic-plated film having a uniform thickness and good adhesion by a method wherein an ion-accelerating electrode is arranged in a radial grid form and a substrate holder is placed rotatably, when ionic-plating a relatively large number of substrates. CONSTITUTION:The substrates 17 are placed on the substrate holder 18 in a vacuum deposition chamber 14, a vapor source material is placed in a vapor source means 16, and the chamber 14 is evacuated. In the next process, the vapor source means 16 is heated, an AC voltage is impressed on a high-frequency coil 19 for ionizing the vaporized material, and a DC voltage is supplied to the holder 18 and the radial grid electrode 20 for accelerating the ions. Then, the plating material is deposited on the substrates 17 while rotating the substrate holder 18.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7141680A JPS56169770A (en) | 1980-05-30 | 1980-05-30 | Ionic plating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7141680A JPS56169770A (en) | 1980-05-30 | 1980-05-30 | Ionic plating device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56169770A true JPS56169770A (en) | 1981-12-26 |
JPS639013B2 JPS639013B2 (en) | 1988-02-25 |
Family
ID=13459884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7141680A Granted JPS56169770A (en) | 1980-05-30 | 1980-05-30 | Ionic plating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56169770A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167766A (en) * | 1984-09-11 | 1986-04-07 | Canon Inc | Ion plating device |
KR100449570B1 (en) * | 2001-12-28 | 2004-09-22 | (주)인텍 | vacuum plating apparatus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06280026A (en) * | 1993-03-24 | 1994-10-04 | Semiconductor Energy Lab Co Ltd | Device and method for film forming |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49120877A (en) * | 1973-03-20 | 1974-11-19 | ||
JPS5278776A (en) * | 1975-12-26 | 1977-07-02 | Youichi Murayama | Apparatus for high frequency ionic plating |
JPS5345097U (en) * | 1976-09-21 | 1978-04-17 |
-
1980
- 1980-05-30 JP JP7141680A patent/JPS56169770A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49120877A (en) * | 1973-03-20 | 1974-11-19 | ||
JPS5278776A (en) * | 1975-12-26 | 1977-07-02 | Youichi Murayama | Apparatus for high frequency ionic plating |
JPS5345097U (en) * | 1976-09-21 | 1978-04-17 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167766A (en) * | 1984-09-11 | 1986-04-07 | Canon Inc | Ion plating device |
KR100449570B1 (en) * | 2001-12-28 | 2004-09-22 | (주)인텍 | vacuum plating apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS639013B2 (en) | 1988-02-25 |
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