JPS565971A - Film forming method - Google Patents

Film forming method

Info

Publication number
JPS565971A
JPS565971A JP8209079A JP8209079A JPS565971A JP S565971 A JPS565971 A JP S565971A JP 8209079 A JP8209079 A JP 8209079A JP 8209079 A JP8209079 A JP 8209079A JP S565971 A JPS565971 A JP S565971A
Authority
JP
Japan
Prior art keywords
supporter
electrode
pipes
film
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8209079A
Other languages
Japanese (ja)
Other versions
JPS60431B2 (en
Inventor
Hidekazu Inoue
Isamu Shimizu
Kyosuke Ogawa
Nobuo Kitajima
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP54082090A priority Critical patent/JPS60431B2/en
Publication of JPS565971A publication Critical patent/JPS565971A/en
Publication of JPS60431B2 publication Critical patent/JPS60431B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a uniform film over large area by placing a movable film forming supporter and a gas supply means having many through holes in an evacuatable deposition chamber so that they are facing each other and by inducing discharge. CONSTITUTION:A film having uniformity in its physical characteristics and thickness is formed over large area with high reproducibility. For example, deposition chamber 103 is internally provided with pipes 115, as a discharge electrode, having many through holes, by which a film forming reactive gas and a carrier gas are supplied from outer cylinders 118, 119 through pipe 117 to beltlike supporter 107 which is automatically coiled with coiling roller 108 so that pipes 115 and supporter 107 are facing each other. Flat plate electrode 109 is set under supporter 107 and connected to power source 111 with lead wire 112. Heater 115a for heating supporter 107 is placed by electrode 109. When chamber 103 is evacuated to a predetermined vacuum degree from vacuum hole 106, a reactive gas and a carrier gas are introduced into chamber 103. Glow discharge is induced between electrode 109 and pipes 115 to convert the internal gases into plasma, whereby a film is formed on supporter 107 and coiled with roller 108.
JP54082090A 1979-06-27 1979-06-27 Film formation method Expired JPS60431B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54082090A JPS60431B2 (en) 1979-06-27 1979-06-27 Film formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54082090A JPS60431B2 (en) 1979-06-27 1979-06-27 Film formation method

Publications (2)

Publication Number Publication Date
JPS565971A true JPS565971A (en) 1981-01-22
JPS60431B2 JPS60431B2 (en) 1985-01-08

Family

ID=13764734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54082090A Expired JPS60431B2 (en) 1979-06-27 1979-06-27 Film formation method

Country Status (1)

Country Link
JP (1) JPS60431B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060651A2 (en) * 1981-03-16 1982-09-22 Energy Conversion Devices, Inc. Apparatus including improved cathode for continuous deposition of amorphous material
JPS59104118A (en) * 1982-12-06 1984-06-15 Agency Of Ind Science & Technol Plasma deposition device
EP0119103A2 (en) * 1983-03-14 1984-09-19 Energy Conversion Devices, Inc. Process gas introduction and channeling system
JPS62142559A (en) * 1985-12-18 1987-06-25 株式会社祥光化学研究所 Structure having deodorizing and antibacterial functions

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102543957B1 (en) * 2021-12-15 2023-06-15 주식회사 현대케피코 Start Stop Coasting and Coast Regeneration Control method and device of Mild Hybrid system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600122A (en) * 1966-03-11 1971-08-17 Surface Aviat Corp Method of grafting ethylenically unsaturated monomer to a polymeric substrate
JPS51141587A (en) * 1975-05-30 1976-12-06 Sharp Kk Method of producing solar battery
JPS5391664A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5391663A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5478135A (en) * 1977-10-19 1979-06-22 Siemens Ag Electronic photographic printing drum and method of producing same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600122A (en) * 1966-03-11 1971-08-17 Surface Aviat Corp Method of grafting ethylenically unsaturated monomer to a polymeric substrate
JPS51141587A (en) * 1975-05-30 1976-12-06 Sharp Kk Method of producing solar battery
JPS5391664A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5391663A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5478135A (en) * 1977-10-19 1979-06-22 Siemens Ag Electronic photographic printing drum and method of producing same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0060651A2 (en) * 1981-03-16 1982-09-22 Energy Conversion Devices, Inc. Apparatus including improved cathode for continuous deposition of amorphous material
JPS59104118A (en) * 1982-12-06 1984-06-15 Agency Of Ind Science & Technol Plasma deposition device
JPH0514415B2 (en) * 1982-12-06 1993-02-25 Kogyo Gijutsuin
EP0119103A2 (en) * 1983-03-14 1984-09-19 Energy Conversion Devices, Inc. Process gas introduction and channeling system
JPS62142559A (en) * 1985-12-18 1987-06-25 株式会社祥光化学研究所 Structure having deodorizing and antibacterial functions
JPH0622540B2 (en) * 1985-12-18 1994-03-30 株式会社祥光化学研究所 Structure with deodorant and antibacterial activity

Also Published As

Publication number Publication date
JPS60431B2 (en) 1985-01-08

Similar Documents

Publication Publication Date Title
US4430547A (en) Cleaning device for a plasma etching system
MY138879A (en) Endothermic reaction apparatus and method
JPS565971A (en) Film forming method
JPS5391665A (en) Plasma cvd device
JPS57134555A (en) Method and device for forming thin film
JPS565972A (en) Film forming method
JPS54155046A (en) Method of manufacturing electrophotographic image forming material
JPS565975A (en) Film forming method
JPS56130466A (en) Film forming method
JPS5391664A (en) Plasma cvd device
JPS5767009A (en) Formation of film
JPS5745339A (en) Production of deposited film
JPS57102022A (en) Reactive sputter etching equipment
JPS5671930A (en) Film formation
JPS5710937A (en) Plasma gaseous phase growth device
JPS565973A (en) Film forming method
JPS5773174A (en) Manufacturing apparatus for coating film
JPS5742331A (en) Manufacture for deposited film
JPS57192258A (en) Film forming apparatus using glow discharge
JPS5675565A (en) Manufacturing method of thin film
JPS54160568A (en) Thin film forming equipment for discharge chemical reaction
JPS6423537A (en) Plasma processing device
JPS51118134A (en) Air supplying and exausting chamber
JPS5667925A (en) Plasma etching method
JPS5764922A (en) Apparatus for forming amorphous thin film