JPS5391663A - Plasma cvd device - Google Patents

Plasma cvd device

Info

Publication number
JPS5391663A
JPS5391663A JP593277A JP593277A JPS5391663A JP S5391663 A JPS5391663 A JP S5391663A JP 593277 A JP593277 A JP 593277A JP 593277 A JP593277 A JP 593277A JP S5391663 A JPS5391663 A JP S5391663A
Authority
JP
Japan
Prior art keywords
plasma cvd
cvd device
placing
holder
keeping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP593277A
Other languages
Japanese (ja)
Other versions
JPS5931977B2 (en
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52005932A priority Critical patent/JPS5931977B2/en
Publication of JPS5391663A publication Critical patent/JPS5391663A/en
Publication of JPS5931977B2 publication Critical patent/JPS5931977B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To enable mass processing while keeping the film thickness and film quality uniform, by constituting the wafer holder as cylindrical shape, placing the plasma generating set in it, and placing a number of processed wafer along the inner wall surface of the holder.
JP52005932A 1977-01-24 1977-01-24 Plasma CVD equipment Expired JPS5931977B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52005932A JPS5931977B2 (en) 1977-01-24 1977-01-24 Plasma CVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52005932A JPS5931977B2 (en) 1977-01-24 1977-01-24 Plasma CVD equipment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP15781183A Division JPS59224128A (en) 1983-08-31 1983-08-31 Plasma CVD equipment

Publications (2)

Publication Number Publication Date
JPS5391663A true JPS5391663A (en) 1978-08-11
JPS5931977B2 JPS5931977B2 (en) 1984-08-06

Family

ID=11624658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52005932A Expired JPS5931977B2 (en) 1977-01-24 1977-01-24 Plasma CVD equipment

Country Status (1)

Country Link
JP (1) JPS5931977B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS565971A (en) * 1979-06-27 1981-01-22 Canon Inc Film forming method
JPS571231A (en) * 1980-06-04 1982-01-06 Res Dev Corp Of Japan Plasma chemical vapour deposition (cvd) device
JPS58193362A (en) * 1982-04-30 1983-11-11 Shimadzu Corp Plasma CVD equipment
JPS5935674A (en) * 1982-08-24 1984-02-27 Sumitomo Electric Ind Ltd Vapor deposition device
US8336488B2 (en) 2007-11-30 2012-12-25 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station plasma reactor with multiple plasma regions

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02148642U (en) * 1989-05-23 1990-12-18

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475307A (en) * 1965-02-04 1969-10-28 Continental Can Co Condensation of monomer vapors to increase polymerization rates in a glow discharge
JPS4837408U (en) * 1971-09-04 1973-05-08
JPS4962385A (en) * 1972-10-20 1974-06-17
JPS50121043U (en) * 1974-03-20 1975-10-03
JPS5141031A (en) * 1974-10-05 1976-04-06 Tomota Fukuda SETSUCHAKUZA ISOSEIBUTSU

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475307A (en) * 1965-02-04 1969-10-28 Continental Can Co Condensation of monomer vapors to increase polymerization rates in a glow discharge
JPS4837408U (en) * 1971-09-04 1973-05-08
JPS4962385A (en) * 1972-10-20 1974-06-17
JPS50121043U (en) * 1974-03-20 1975-10-03
JPS5141031A (en) * 1974-10-05 1976-04-06 Tomota Fukuda SETSUCHAKUZA ISOSEIBUTSU

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS565971A (en) * 1979-06-27 1981-01-22 Canon Inc Film forming method
JPS571231A (en) * 1980-06-04 1982-01-06 Res Dev Corp Of Japan Plasma chemical vapour deposition (cvd) device
JPS58193362A (en) * 1982-04-30 1983-11-11 Shimadzu Corp Plasma CVD equipment
JPS5935674A (en) * 1982-08-24 1984-02-27 Sumitomo Electric Ind Ltd Vapor deposition device
US8336488B2 (en) 2007-11-30 2012-12-25 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station plasma reactor with multiple plasma regions

Also Published As

Publication number Publication date
JPS5931977B2 (en) 1984-08-06

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