JPS5362982A - Plasma cvd apparatus - Google Patents

Plasma cvd apparatus

Info

Publication number
JPS5362982A
JPS5362982A JP13737576A JP13737576A JPS5362982A JP S5362982 A JPS5362982 A JP S5362982A JP 13737576 A JP13737576 A JP 13737576A JP 13737576 A JP13737576 A JP 13737576A JP S5362982 A JPS5362982 A JP S5362982A
Authority
JP
Japan
Prior art keywords
plasma cvd
cvd apparatus
si3o4
plasmas
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13737576A
Other languages
Japanese (ja)
Other versions
JPS5827656B2 (en
Inventor
Yasuhiro Horiike
Shigeru Osawa
Masahiro Shibagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13737576A priority Critical patent/JPS5827656B2/en
Publication of JPS5362982A publication Critical patent/JPS5362982A/en
Publication of JPS5827656B2 publication Critical patent/JPS5827656B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To make the impact by charge particles upon a semiconductor device none and obtain a SiO2 or Si3O4 film of a uniform thickness by performing CVD treatment in a position perfectly isolated from plasmas.
JP13737576A 1976-11-17 1976-11-17 Plasma CVD equipment Expired JPS5827656B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13737576A JPS5827656B2 (en) 1976-11-17 1976-11-17 Plasma CVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13737576A JPS5827656B2 (en) 1976-11-17 1976-11-17 Plasma CVD equipment

Publications (2)

Publication Number Publication Date
JPS5362982A true JPS5362982A (en) 1978-06-05
JPS5827656B2 JPS5827656B2 (en) 1983-06-10

Family

ID=15197206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13737576A Expired JPS5827656B2 (en) 1976-11-17 1976-11-17 Plasma CVD equipment

Country Status (1)

Country Link
JP (1) JPS5827656B2 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515258A (en) * 1978-07-19 1980-02-02 Nec Corp Heat treatment apparatus for semiconductor substrate
JPS5571027A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Continuous surface treatment apparatus
JPS5773174A (en) * 1980-10-24 1982-05-07 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for coating film
JPS57123363A (en) * 1981-01-23 1982-07-31 Nat Jutaku Kenzai Footboard for staircase
JPS58103534A (en) * 1981-12-16 1983-06-20 Toshiba Corp Vacuum deposition apparatus
JPS59109138U (en) * 1983-01-12 1984-07-23 クラリオン株式会社 Thin film vapor phase growth equipment
JPS59225517A (en) * 1983-06-06 1984-12-18 Nippon Denso Co Ltd Apparatus for manufacture of amorphous semiconductor
JPS6034013A (en) * 1983-08-04 1985-02-21 Agency Of Ind Science & Technol Manufacture of solid thin film
JPS6034012A (en) * 1983-08-04 1985-02-21 Agency Of Ind Science & Technol Manufacture of solid thin film
JPS6122628A (en) * 1984-07-11 1986-01-31 Hitachi Ltd Dry etching device
JPS62279303A (en) * 1986-05-28 1987-12-04 Sumitomo Electric Ind Ltd Production of optical waveguide layer
JPS63125679A (en) * 1987-05-30 1988-05-28 Canon Inc Formation of deposited film
JPS63202016A (en) * 1987-02-18 1988-08-22 Hitachi Ltd Vapor growth apparatus
JPH01132801A (en) * 1987-11-12 1989-05-25 Teijin Ltd Support stocking
JPH02226721A (en) * 1988-10-31 1990-09-10 Tokyo Electron Ltd Treating apparatus and treating method
US5067437A (en) * 1988-03-28 1991-11-26 Kabushiki Kaisha Toshiba Apparatus for coating of silicon semiconductor surface
US5192370A (en) * 1989-09-05 1993-03-09 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for forming thin film
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
JP2018142715A (en) * 2012-08-01 2018-09-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Apparatus for selectively oxidizing at low temperature using remote plasma source and method

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515258A (en) * 1978-07-19 1980-02-02 Nec Corp Heat treatment apparatus for semiconductor substrate
JPS6330778B2 (en) * 1978-11-24 1988-06-21 Hitachi Ltd
JPS5571027A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Continuous surface treatment apparatus
JPS5773174A (en) * 1980-10-24 1982-05-07 Semiconductor Energy Lab Co Ltd Manufacturing apparatus for coating film
JPH0325928B2 (en) * 1980-10-24 1991-04-09 Handotai Energy Kenkyusho
JPS57123363A (en) * 1981-01-23 1982-07-31 Nat Jutaku Kenzai Footboard for staircase
JPS58103534A (en) * 1981-12-16 1983-06-20 Toshiba Corp Vacuum deposition apparatus
JPS59109138U (en) * 1983-01-12 1984-07-23 クラリオン株式会社 Thin film vapor phase growth equipment
JPS59225517A (en) * 1983-06-06 1984-12-18 Nippon Denso Co Ltd Apparatus for manufacture of amorphous semiconductor
JPH0546093B2 (en) * 1983-06-06 1993-07-13 Nippon Denso Co
JPH0459769B2 (en) * 1983-08-04 1992-09-24 Kogyo Gijutsuin
JPS6034012A (en) * 1983-08-04 1985-02-21 Agency Of Ind Science & Technol Manufacture of solid thin film
JPS6034013A (en) * 1983-08-04 1985-02-21 Agency Of Ind Science & Technol Manufacture of solid thin film
JPS6122628A (en) * 1984-07-11 1986-01-31 Hitachi Ltd Dry etching device
JPS62279303A (en) * 1986-05-28 1987-12-04 Sumitomo Electric Ind Ltd Production of optical waveguide layer
JPS63202016A (en) * 1987-02-18 1988-08-22 Hitachi Ltd Vapor growth apparatus
JPS63125679A (en) * 1987-05-30 1988-05-28 Canon Inc Formation of deposited film
JPH01132801A (en) * 1987-11-12 1989-05-25 Teijin Ltd Support stocking
US5067437A (en) * 1988-03-28 1991-11-26 Kabushiki Kaisha Toshiba Apparatus for coating of silicon semiconductor surface
JPH02226721A (en) * 1988-10-31 1990-09-10 Tokyo Electron Ltd Treating apparatus and treating method
US5192370A (en) * 1989-09-05 1993-03-09 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for forming thin film
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5511509A (en) * 1993-07-27 1996-04-30 Texas Instruments Incorporated Apparatus for p-type doping of semiconductor structures formed of group II and group VI elements
JP2018142715A (en) * 2012-08-01 2018-09-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Apparatus for selectively oxidizing at low temperature using remote plasma source and method
JP2020061555A (en) * 2012-08-01 2020-04-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Apparatus using remote plasma source for selective oxidation under low temperature, and method
US10714333B2 (en) 2012-08-01 2020-07-14 Applied Materials, Inc. Apparatus and method for selective oxidation at lower temperature using remote plasma source

Also Published As

Publication number Publication date
JPS5827656B2 (en) 1983-06-10

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