JPS5362982A - Plasma cvd apparatus - Google Patents
Plasma cvd apparatusInfo
- Publication number
- JPS5362982A JPS5362982A JP13737576A JP13737576A JPS5362982A JP S5362982 A JPS5362982 A JP S5362982A JP 13737576 A JP13737576 A JP 13737576A JP 13737576 A JP13737576 A JP 13737576A JP S5362982 A JPS5362982 A JP S5362982A
- Authority
- JP
- Japan
- Prior art keywords
- plasma cvd
- cvd apparatus
- si3o4
- plasmas
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To make the impact by charge particles upon a semiconductor device none and obtain a SiO2 or Si3O4 film of a uniform thickness by performing CVD treatment in a position perfectly isolated from plasmas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13737576A JPS5827656B2 (en) | 1976-11-17 | 1976-11-17 | Plasma CVD equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13737576A JPS5827656B2 (en) | 1976-11-17 | 1976-11-17 | Plasma CVD equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5362982A true JPS5362982A (en) | 1978-06-05 |
JPS5827656B2 JPS5827656B2 (en) | 1983-06-10 |
Family
ID=15197206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13737576A Expired JPS5827656B2 (en) | 1976-11-17 | 1976-11-17 | Plasma CVD equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5827656B2 (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515258A (en) * | 1978-07-19 | 1980-02-02 | Nec Corp | Heat treatment apparatus for semiconductor substrate |
JPS5571027A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Continuous surface treatment apparatus |
JPS5773174A (en) * | 1980-10-24 | 1982-05-07 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for coating film |
JPS57123363A (en) * | 1981-01-23 | 1982-07-31 | Nat Jutaku Kenzai | Footboard for staircase |
JPS58103534A (en) * | 1981-12-16 | 1983-06-20 | Toshiba Corp | Vacuum deposition apparatus |
JPS59109138U (en) * | 1983-01-12 | 1984-07-23 | クラリオン株式会社 | Thin film vapor phase growth equipment |
JPS59225517A (en) * | 1983-06-06 | 1984-12-18 | Nippon Denso Co Ltd | Apparatus for manufacture of amorphous semiconductor |
JPS6034013A (en) * | 1983-08-04 | 1985-02-21 | Agency Of Ind Science & Technol | Manufacture of solid thin film |
JPS6034012A (en) * | 1983-08-04 | 1985-02-21 | Agency Of Ind Science & Technol | Manufacture of solid thin film |
JPS6122628A (en) * | 1984-07-11 | 1986-01-31 | Hitachi Ltd | Dry etching device |
JPS62279303A (en) * | 1986-05-28 | 1987-12-04 | Sumitomo Electric Ind Ltd | Production of optical waveguide layer |
JPS63125679A (en) * | 1987-05-30 | 1988-05-28 | Canon Inc | Formation of deposited film |
JPS63202016A (en) * | 1987-02-18 | 1988-08-22 | Hitachi Ltd | Vapor growth apparatus |
JPH01132801A (en) * | 1987-11-12 | 1989-05-25 | Teijin Ltd | Support stocking |
JPH02226721A (en) * | 1988-10-31 | 1990-09-10 | Tokyo Electron Ltd | Treating apparatus and treating method |
US5067437A (en) * | 1988-03-28 | 1991-11-26 | Kabushiki Kaisha Toshiba | Apparatus for coating of silicon semiconductor surface |
US5192370A (en) * | 1989-09-05 | 1993-03-09 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for forming thin film |
US5398641A (en) * | 1993-07-27 | 1995-03-21 | Texas Instruments Incorporated | Method for p-type doping of semiconductor structures formed of group II and group VI elements |
JP2018142715A (en) * | 2012-08-01 | 2018-09-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Apparatus for selectively oxidizing at low temperature using remote plasma source and method |
-
1976
- 1976-11-17 JP JP13737576A patent/JPS5827656B2/en not_active Expired
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515258A (en) * | 1978-07-19 | 1980-02-02 | Nec Corp | Heat treatment apparatus for semiconductor substrate |
JPS6330778B2 (en) * | 1978-11-24 | 1988-06-21 | Hitachi Ltd | |
JPS5571027A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Continuous surface treatment apparatus |
JPS5773174A (en) * | 1980-10-24 | 1982-05-07 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for coating film |
JPH0325928B2 (en) * | 1980-10-24 | 1991-04-09 | Handotai Energy Kenkyusho | |
JPS57123363A (en) * | 1981-01-23 | 1982-07-31 | Nat Jutaku Kenzai | Footboard for staircase |
JPS58103534A (en) * | 1981-12-16 | 1983-06-20 | Toshiba Corp | Vacuum deposition apparatus |
JPS59109138U (en) * | 1983-01-12 | 1984-07-23 | クラリオン株式会社 | Thin film vapor phase growth equipment |
JPS59225517A (en) * | 1983-06-06 | 1984-12-18 | Nippon Denso Co Ltd | Apparatus for manufacture of amorphous semiconductor |
JPH0546093B2 (en) * | 1983-06-06 | 1993-07-13 | Nippon Denso Co | |
JPH0459769B2 (en) * | 1983-08-04 | 1992-09-24 | Kogyo Gijutsuin | |
JPS6034012A (en) * | 1983-08-04 | 1985-02-21 | Agency Of Ind Science & Technol | Manufacture of solid thin film |
JPS6034013A (en) * | 1983-08-04 | 1985-02-21 | Agency Of Ind Science & Technol | Manufacture of solid thin film |
JPS6122628A (en) * | 1984-07-11 | 1986-01-31 | Hitachi Ltd | Dry etching device |
JPS62279303A (en) * | 1986-05-28 | 1987-12-04 | Sumitomo Electric Ind Ltd | Production of optical waveguide layer |
JPS63202016A (en) * | 1987-02-18 | 1988-08-22 | Hitachi Ltd | Vapor growth apparatus |
JPS63125679A (en) * | 1987-05-30 | 1988-05-28 | Canon Inc | Formation of deposited film |
JPH01132801A (en) * | 1987-11-12 | 1989-05-25 | Teijin Ltd | Support stocking |
US5067437A (en) * | 1988-03-28 | 1991-11-26 | Kabushiki Kaisha Toshiba | Apparatus for coating of silicon semiconductor surface |
JPH02226721A (en) * | 1988-10-31 | 1990-09-10 | Tokyo Electron Ltd | Treating apparatus and treating method |
US5192370A (en) * | 1989-09-05 | 1993-03-09 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for forming thin film |
US5398641A (en) * | 1993-07-27 | 1995-03-21 | Texas Instruments Incorporated | Method for p-type doping of semiconductor structures formed of group II and group VI elements |
US5511509A (en) * | 1993-07-27 | 1996-04-30 | Texas Instruments Incorporated | Apparatus for p-type doping of semiconductor structures formed of group II and group VI elements |
JP2018142715A (en) * | 2012-08-01 | 2018-09-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Apparatus for selectively oxidizing at low temperature using remote plasma source and method |
JP2020061555A (en) * | 2012-08-01 | 2020-04-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Apparatus using remote plasma source for selective oxidation under low temperature, and method |
US10714333B2 (en) | 2012-08-01 | 2020-07-14 | Applied Materials, Inc. | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
Also Published As
Publication number | Publication date |
---|---|
JPS5827656B2 (en) | 1983-06-10 |
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