JPS58103534A - Vacuum deposition apparatus - Google Patents

Abstract

PURPOSE:To obtain a vapor-deposited plastic film or the like having a good luster and excellent adhesion, by pretreating a film surface with a gas activated with microwave plasma and vacuum-depositing the film in the same vessel. CONSTITUTION:This apparatus consists of a vessel 1 for vacuum deposition, a system 2 for supplying a pretreatment gas, a system 3 for generating plasma and a system 4 for evacuation. After opening a lid 9, a film is mounted on an apparatus 6. After sealing the treatment chamber 1, the chamber 1 is evacuated to about 10<-4> Torr. From a carrier cylinder 12 and an oxygen cylinder 13, the gases are supplied. Then, a microwave oscillator 16 is operated to generate microwaves by which a treatment gas is converted into plasma. About several tens of seconds suffice for the time of contact between the film and the treatment gas. After completion of the pretreatment, the gas cylinder are stopped, the treatment chamber is evacuated to about 10<-4> Torr and vacuum deposition is carried out by heating an evaporation boat 8 while the film is being rewound.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a vacuum evaporation apparatus for plastic films, etc., and relates to a vacuum evaporation apparatus for pretreating the surface of a film with nine gases activated using microwave plasma in the same container. - to do.

Invention fl! Technical Background and Layer Point Generally, as a pretreatment when performing film KM sand battering, the dust on the film surface is wiped off,
For materials that have been cleaned with agent #1 or that have poor adhesion, 1μll of corona discharge treatment is applied before vapor deposition. In the case of corona discharge treatment, a rotating metal roll coated with a high-frequency electrode and an electrocasting material is usually used.9 In corona discharge treatment, corona discharge is caused while the plastic film to be treated is passed through the cabinet of the roll and electrode. This is done by However, in the conventional method of depositing a pretreated film in a vapor deposition apparatus, the adhesion between the film and the deposited film is poor, and it is difficult to obtain a deposited film with good gloss. More specifically, in the case of corona discharge treatment, for example, the treated film must be subjected to early KJI deposition because the activation effect of the film surface decreases over time. Furthermore, when metal is vapor-deposited, for example, there is a practical drawback that the vapor-deposited metal tends to peel off over time.

OBJECTS OF THE INVENTION The present invention addresses the above-mentioned drawbacks of KfI/1 in the plastic film JUIIIK and provides a vacuum deposition apparatus for obtaining a deposited film with good gloss and excellent adhesion.
0 Summary of the Invention This device generates, for example, a nitrogen-oxygen mixed gas in an argon-oxygen mixed gas or oxygen gas by microwave discharge, activates it with nine plasma, and generates a cough activated gas in a downstream area separated from the plasma generation part. This device brings the film into contact with the film, performs pretreatment, and then further increases the degree of vacuum in the same container to perform vapor deposition.

Embodiment of the Invention FIG. 1 shows an example of the configuration of a vacuum evaporation apparatus of the invention. This apparatus includes a vapor deposition processing container (1), a processing gas supply system (2),
It consists of a plasma generation system (3) and an exhaust system (4). More specifically, the vapor deposition processing chamber 111(1) includes a film (5), a film winding device (6), a vapor deposited film of 1 m (
7).

Vapor deposition board [8], 41 bodies (9), 0 rings all, capacitance 1 nometer all 9, 9, process gas supply system (2), carrier gas O storage cylinder n, oxygen storage cylinder as, Weight needle aJ & needle valve (c)
The plasma generation system (3) is provided with a structure in which gas is supplied to the plasma generation system (3). In addition, the plasma generation system (3) includes microwave oscillation an, a waveguide αη for microwave transmission,
In addition, it is equipped with three small holes, a plunger, a water-cooled tube, and a plasma generation tube for impedance matching, and an exhaust system (
4) is equipped with an exhaust system trap (2) and a vacuum pump (c).

Hereinafter, a procedure for vacuum-depositing a film using the apparatus having the above configuration will be described.

First, open the lid (9) and attach the film to the film winding device (6)K. Next, the processing chamber is sealed and after death, the vacuum pump (to) is operated to pump the inside of the processing chamber (1) to 1 (r'
Exhaust to about tuff. Next, the carrier gas cylinder α hot water and the oxygen gas cylinder (Ls are opened to supply gases. At this time, the mixing ratio of the carrier gas and oxygen is preferably 1:1 to 5:1 (carrier gas:oxygen) from the viewpoint of the processing effect. Before, at this time, the pressure inside the heat treatment container (D is 10-1
Once Qtorr, the flow rate is preferably about ~500mj/4in. This is done by checking the needle valve α while watching the flowmeter I.
Activate the zero-order microwave oscillator that is adjusted using $, oscillate microwaves with a frequency of 2450 MHg and a power of 2 KW, and match the impedance with the sleeve stub chainer α and plunger Ql, and send it to the plasma generation part. Transmit microwaves.

The processing gas is discharged to form plasma. The thus activated gas flows into the processing chamber (1) and forms a plasma (5).
) to modify the film surface.

Finally, the film is sent through a SAP device (6)k at a constant shielding angle), processed, and then sent to KIk*.

At this time, the contact time (processing time) between the film and the processing gas is several tens of seconds once.Next, after the Oeli processing is completed, close the gas cylinder 4 & and close the needle valve (1s). Tighten the pressure inside the processing vessel.

After reducing the pressure to 10' torr@degrees, the pretreated film is re-rolled and deposited while heating the deposition boat (8) for deposition.

Table 1 shows comparative examples of films treated by the apparatus of the present invention) and films treated with San Mishima and corona discharge.

Regarding the pretreatment in the present invention, it has been confirmed that if the contact angle of the film suddenly decreases, the film will be more likely to adhere to 1m.

Taking metal vapor deposition of polyvinylidene fluoride film as an example, the contact angle of polyvinylidene fluoride film that is generally practical is 55 to 600 or less, preferably 500 or less. ll! Figure 1 shows the experimental results when using a conventional device and using this device after corona discharge treatment, and after forming evaporated films of zinc and arsenium on each film, 74 Tape (3M Company II) is applied and peeled off, and the peeling status of the vapor deposited film during running is also shown.
This is because it is necessary to peel off the cellophane tape and peel off the metal vapor deposited lK at the same time in good condition 〇＠1] As is clear, in the peeling test using cellophane tape, this device was superior to the conventional device. Against peeling after 1 to 6 months 1
With this device, no peeling occurred even after one year, indicating that the treatment effect was sustained.

In addition, in conventional equipment, in order to improve the pretreatment effect,
If you try to lower the II antennae, you will end up with excessive pretreatment conditions.
, which induces pinholes and significantly deteriorates the properties of the film.

On the other hand, with this device, the pretreatment reaction occurs only on the surface of the film that is in contact with the processing gas KII.
Even if this is done under excessive layer conditions, pinholes are unlikely to occur. First, because this device is not left in the atmosphere after pretreatment as in conventional methods, there is no chance of moisture contaminating the film surface, and since vapor deposition is performed immediately after pretreatment, pretreatment The inventor of the present invention considers the reasons for the improved adhesion and appearance of the deposited film by this device as follows: ing.

Generally, the adhesion of a deposited film is considered to be affected by the following conditions. That is, if moisture, residual solvent, unreacted plasticizer, etc. are present on the film surface, 7. A rounding process in which impurities or additives are present at the interface between the film base material and the deposited film.

Adhesion strength decreases. The polarity of the film material also has a large effect, and polypropylene and polyethylene are considered to be thin materials that peel off. Furthermore, it is thought that the ridged surface roughness K of the film is also affected.

In response to these conditions that affect adhesion, this device uses microwave plasma to generate highly reactive active species, such as oxygen radicals and bulk ions, which cause the following reactions with the film surface. This is considered to be rounding that causes Another reason is that since the treatment is carried out simultaneously in the same container, there is no chance of the treatment being exposed to the atmosphere and being contaminated by moisture, dust, gas, etc. in the atmosphere.

(1) It oxidizes and removes residual lightning repellents, scrapers, unreacted substances, etc. (2) It reacts with the film base material and oxidizes the surface, increasing polarity.

(3) Due to the saponification reaction, the surface of the film is extremely finely roughened. (4) The rounding process is performed in a vacuum system, and volatile components such as moisture are removed during the line treatment stage. When one apparatus is used, the deposited film has good gloss and a high quality finish can be obtained. The gloss of general KJI deposition is affected by the degree of vacuum of the JII 1 deposition container, but in this respect, if the 1 method is used,
Pre-prepare ingredients that worsen the vacuum of the container, such as additives, cleaning agents, and unreacted waste! Since it is removed by IIK and is not exposed to the atmosphere afterwards, there is no adhesion or adhesion of components that would impair the degree of vacuum, and there is no contamination with dust in the atmosphere, resulting in a high-gloss finish. Effects of the Invention As described above, if the present vacuum evaporation apparatus is used for vapor deposition, it will be possible to obtain a vapor deposited film with excellent adhesion to the film base material and good gloss, which will be useful in both the industry and the industry. 0 which is very useful

[Brief explanation of the drawing]

The drawings are schematic configuration diagrams showing one embodiment of the present invention. 0 1...Film processing chamber, 2... Processing gas supply system. 3... Plasma generation system, 4... Exhaust system, 5... Film, 6... Film winding device.

Claims (2)

[Claims] (1) A vacuum evaporation apparatus for a film, which is characterized in that the surface of the film is pretreated with a gas generated by a micro-discharge and activated using a gas, and then the film is deposited in the same container. (2) As the processing gas, use a mixed gas of argon and oxygen or a mixed gas of nitrogen and oxygen at a ratio of 1 to 5 to 10, respectively.
- The film vacuum deposition apparatus according to claim 1, which is used in the following cases.