JPH0546093B2 - - Google Patents
Info
- Publication number
- JPH0546093B2 JPH0546093B2 JP58100619A JP10061983A JPH0546093B2 JP H0546093 B2 JPH0546093 B2 JP H0546093B2 JP 58100619 A JP58100619 A JP 58100619A JP 10061983 A JP10061983 A JP 10061983A JP H0546093 B2 JPH0546093 B2 JP H0546093B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- frequency power
- high frequency
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000354 decomposition reaction Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 230000006866 deterioration Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 32
- 230000006698 induction Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
この発明は、グロー放電を伴なう非晶質半導体
の製造手段に係るもので、特に複数の原料ガスか
ら２成分以上の非晶質半導体を製造する装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a means for manufacturing an amorphous semiconductor that involves glow discharge, and in particular to an apparatus for manufacturing an amorphous semiconductor of two or more components from a plurality of raw material gases. be.
従来より、非晶質半導体を製造するために、プ
ラズマCVDが使用されている。しかし、ａ−
SiC：Ｈのように２成分以上の組成を有する非晶
質半導体を製造する場合、特に大面積膜となつた
時には、位置による組成比、膜厚（成長速度）の
不均一がみられる。 Conventionally, plasma CVD has been used to manufacture amorphous semiconductors. However, a-
When manufacturing an amorphous semiconductor having a composition of two or more components such as SiC:H, especially when a large area film is produced, non-uniformity in composition ratio and film thickness (growth rate) depending on position is observed.
この発明は上記のような点に鑑みなされたもの
で、例えば大面積膜のような場合でも、全体的に
組成比、膜厚等を均一に設定し、その膜質も充分
なものとすることができるようにする特に２成分
以上の組成を有する非晶質半導体の製造方法を提
供しようとするものである。 This invention was made in view of the above points, and it is possible to set the overall composition ratio, film thickness, etc. uniform even in the case of a large-area film, and to ensure that the film quality is sufficient. In particular, it is an object of the present invention to provide a method for manufacturing an amorphous semiconductor having a composition of two or more components.
すなわち、この発明はCH4ガスとSiH4ガスを
プラズマ分解し、基板上に非晶質半導体を堆積す
る方法であつて、
上記基板の設定される真空チヤンバ内において
上記基板を挟んで設定された第１のプラズマ分解
手段の高周波電力を、上記堆積させる非晶質半導
体の膜質劣化を防止すべく低く設定し、
上記CH4ガスとSiH4ガスのうち比較的分解エ
ネルギーの大きいCH4ガスを、上記第１のプラズ
マ分解手段の高周波電力より高い高周波電力を有
する第２のプラズマ分解手段によつて予めプラズ
マ分解して、このCH4ガスをラジカル状態とし、
このラジカル状態とされた上記CH4ガスと上記
SiH4ガスとを上記第１のプラズマ分解手段の設
定された上記真空チヤンバ内へ導入し、これら導
入された混合ガスを上記第１のプラズマ分解手段
にて同時にプラズマ分解するようにしたことを特
徴とする非晶質半導体の製造方法をその要旨とす
るものである。 That is, the present invention is a method of plasma decomposing CH 4 gas and SiH 4 gas to deposit an amorphous semiconductor on a substrate, the method being a method of depositing an amorphous semiconductor on a substrate, the method being a method of depositing an amorphous semiconductor on a substrate, the method being a method of depositing an amorphous semiconductor on a substrate with the substrate sandwiched therebetween in a vacuum chamber in which the substrate is set. The high frequency power of the first plasma decomposition means is set low in order to prevent deterioration of the film quality of the amorphous semiconductor to be deposited. Plasma decomposition is performed in advance by a second plasma decomposition means having a high frequency power higher than the high frequency power of the first plasma decomposition means to convert the CH 4 gas into a radical state, and the CH 4 gas brought into this radical state is and above
SiH 4 gas is introduced into the vacuum chamber in which the first plasma decomposition means is set, and the introduced mixed gas is simultaneously plasma decomposed by the first plasma decomposition means. The gist of this paper is a method for manufacturing an amorphous semiconductor.
以下図面を参照してこの発明の一実施例を説明
する。第１図はその構成を示すもので、高真空状
態のチヤンバ１１を備える。このチヤンバ１１内
には平行に相対向するようにして平板電極１２，
１３が設けられている。そして、上側に位置する
平板電極１２には、チヤンバ１１の上側に開口す
るガス導入口１４が設けられ、この導入口１４に
は強化耐熱ガラスで構成されるガス導入管１５が
設けられているもので、この導入管１５の外側に
は高周波誘導コイル１６が巻装されている。この
誘導コイル１６には、高周波電源１７から高周波
電力を供給し、導入管１５を介してチヤンバ１１
内に導入されるガスを、予めプラズマ分解する。
ここで、この平板電極１２には、導入されたガス
をチヤンバ１１内に放出するために、全体に均一
にして多数の細孔が形成されている。 An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows its configuration, which includes a chamber 11 in a high vacuum state. Inside this chamber 11, flat plate electrodes 12 are arranged parallel to each other and facing each other.
13 are provided. The flat electrode 12 located on the upper side is provided with a gas introduction port 14 that opens above the chamber 11, and this introduction port 14 is provided with a gas introduction pipe 15 made of reinforced heat-resistant glass. A high frequency induction coil 16 is wound around the outside of this introduction tube 15. High-frequency power is supplied to the induction coil 16 from a high-frequency power source 17, and the induction coil 16 is supplied with high-frequency power to the chamber 11 through the introduction pipe 15.
The gas introduced into the chamber is subjected to plasma decomposition in advance.
Here, in order to release the introduced gas into the chamber 11, a large number of pores are uniformly formed throughout the flat electrode 12.
また、下方の平板電極１３はチヤンバ１１を介
して接地されているもので、この平板電極１３上
に半導体基板１８が設定され、下部には基板１８
を加熱するヒータ１９を設ける。そして、平板電
極１２と１３に高周波電源２０から高周波電力を
供給する。 Further, the lower flat plate electrode 13 is grounded via the chamber 11, and a semiconductor substrate 18 is set on this flat plate electrode 13.
A heater 19 is provided to heat the. Then, high frequency power is supplied to the flat plate electrodes 12 and 13 from a high frequency power source 20.
上記チヤンバ１１には、さらに平板電極１２お
よび１３の間に、母材ガスを導入する導入口２１
が形成され、またチヤンバ１１内のガスを排出す
る排出口２２が設けられている。 The chamber 11 further includes an inlet 21 for introducing base material gas between the flat electrodes 12 and 13.
is formed, and an outlet 22 for discharging the gas inside the chamber 11 is provided.
このように構成される装置において、例えばＰ
型ａ−SiC：Ｈ非晶質半導体を作成する場合につ
いて以下説明する。まずチヤンバ１１は予め１×
10-5Torr以下に真空引きしておく。そして、基
板１８の温度が250℃に安定したところで、比較
的分解エネルギーの大きいArベース10％のCH4
ガスを、流量16SCCM（Standard Cubic
Centimenter per minutes：１分当りの標準状態
における流量）、同じくArベース300ppmのB2H6
ガスを流量10SCCMでガス導入管１５から導入口
１４を介してチヤンバ１１内に導入する。また、
母材ガスとなる比較的分解エネルギーの小さい
ArベースSiH4ガスを流量30SCCMでガス導入口
２１から導入する。この時、高周波電源１７から
誘導コイル１６に高周波電力を供給し、ガス導入
管１５内に高周波プラズマを発生させ、CH4と
B2H6の混合ガスを高周波分解し、CHoラジカル
（ｎ＝０〜４）を作る。この場合、誘導コイル１
６に対する高周波電力は30Wである。そして、さ
らに相対向する平行な平板電極１２，１３間に、
高周波電源２０から10Wの高周波電力を供給し、
ガス導入口２１から導入されたSiH4と、上記プ
ラズマ分解された平板電極１２の細孔を介して導
入されるCH4とB2H6の混合ガスを、同時に高周
波分解しＰ型ａ−SiC：Ｈを作成して基板１８上
に堆積する。 In a device configured in this way, for example, P
The case of creating a type a-SiC:H amorphous semiconductor will be described below. First, chamber 11 is 1x in advance.
Evacuate to below 10 -5 Torr. Then, when the temperature of the substrate 18 stabilized at 250°C, Ar-based 10% CH4 , which has a relatively large decomposition energy,
Gas, flow rate 16SCCM (Standard Cubic
Centimeter per minute: flow rate under standard conditions per minute), also based on Ar, 300 ppm B 2 H 6
Gas is introduced into the chamber 11 from the gas introduction pipe 15 through the introduction port 14 at a flow rate of 10 SCCM. Also,
Relatively low decomposition energy as base material gas
Ar-based SiH 4 gas is introduced from the gas inlet 21 at a flow rate of 30 SCCM. At this time, high-frequency power is supplied from the high-frequency power supply 17 to the induction coil 16 to generate high-frequency plasma in the gas introduction pipe 15, and to generate CH 4 and
A mixed gas of B 2 H 6 is subjected to high frequency decomposition to produce CH o radicals (n=0 to 4). In this case, induction coil 1
The high frequency power for 6 is 30W. Further, between the parallel plate electrodes 12 and 13 facing each other,
Supplies 10W of high frequency power from high frequency power supply 20,
SiH 4 introduced from the gas inlet 21 and a mixed gas of CH 4 and B 2 H 6 introduced through the pores of the plasma-decomposed flat plate electrode 12 are simultaneously high-frequency decomposed to form P-type a-SiC. :H is created and deposited on the substrate 18.
このようにして作成された非晶質半導体Ｐ型ａ
−SiC：Ｈは、従来のCH4とB2H6の混合ガスをプ
ラズマ分解しないものに比較して、光導電率の値
が５〜10倍大きくなるものであり、例えばａ−
Si：ＨのFin型大陽電池のＰ層として非常に有用
なものとすることができる。 The amorphous semiconductor P type a created in this way
-SiC:H has a photoconductivity value that is 5 to 10 times larger than that of a conventional mixed gas of CH 4 and B 2 H 6 that does not undergo plasma decomposition; for example, a-
It can be made very useful as the P layer of a Si:H Fin-type solar cell.
上記実施例ではCH4およびB2H6ガスを高周波
誘導コイル１６によつてプラズマ分解するように
したが、第２図に示すようにチヤンバ１１内に平
行電極２３および２４を設置し、この電極部に高
周波電源１７から高周波電力を供給し、ガス導入
口１４から導入されるCH4およびB2H6の混合ガ
スを予めプラズマ分解するようにしてもよい。 In the above embodiment, CH 4 and B 2 H 6 gases were subjected to plasma decomposition using the high frequency induction coil 16, but parallel electrodes 23 and 24 were installed in the chamber 11 as shown in FIG. The mixed gas of CH 4 and B 2 H 6 introduced from the gas inlet 14 may be plasma decomposed in advance by supplying high frequency power from the high frequency power source 17 to the gas inlet 14 .
その他、第３図に示すようにガス導入管１５の
外周に、間隔を設定して２本の銅帯２５ａ，２５
ｂを巻き付け、この銅帯２５ａ，２５ｂ間に高周
波電力源１７から高周波電力を供給するようにし
ても同様に実施し得る。 In addition, as shown in FIG.
The same effect can be achieved by winding the copper bands 25a and 25b and supplying high frequency power from the high frequency power source 17 between the copper bands 25a and 25b.
第２図および第３図において、第１図と同一構
成部分は同一符号を付しその説明を省略する。 In FIGS. 2 and 3, the same components as those in FIG. 1 are designated by the same reference numerals, and the explanation thereof will be omitted.
以上のようにこの発明によれば、基板の設定さ
れたチヤンバ内の第１プラズマ分解手段の高周波
電力を、例えば10W程度と低く認定するようにし
ているため、全面に対して組成比、膜厚等の均質
な非晶質半導体を作成し得るものであり、特に光
導電率特性の良好な非晶質半導体を製造すること
のできるようになるものである。なお、プラズマ
分解手段の高周波電力を低くしたことにより比較
的分解エネルギーが大きいため分解が困難となつ
たCH4ガスは、予め第２のプラズマ分解手段によ
つてラジカル状態とされているため、低い電力の
上記第１のプラズマ分解手段によりSiH4ガスと
共にプラズマ分解することが可能となるものであ
る。 As described above, according to the present invention, the high frequency power of the first plasma decomposition means in the chamber where the substrate is set is certified as low, for example, about 10W, so that the composition ratio and film thickness are It is possible to produce a homogeneous amorphous semiconductor such as the above, and in particular, it becomes possible to produce an amorphous semiconductor with good photoconductivity characteristics. Note that by lowering the high-frequency power of the plasma decomposition means, CH 4 gas, which has a relatively large decomposition energy and is difficult to decompose, has been made into a radical state by the second plasma decomposition means in advance, so it has a low The first plasma decomposition means using electric power enables plasma decomposition together with SiH 4 gas.
第１図はこの発明の一実施例に係る製造装置を
説明する構成図、第２図および第３図はそれぞれ
この発明の他の実施例を説明する図である。
１１……チヤンバ、１２，１３……平板電極、
１４，２１……ガス導入口、１５……ガス導入
管、１６……高周波誘導コイル、１７，２０……
高周波電源、１８……半導体基板、２０……ヒー
タ。
FIG. 1 is a block diagram illustrating a manufacturing apparatus according to one embodiment of the invention, and FIGS. 2 and 3 are diagrams illustrating other embodiments of the invention, respectively. 11... Chamber, 12, 13... Flat electrode,
14, 21... Gas inlet, 15... Gas inlet pipe, 16... High frequency induction coil, 17, 20...
High frequency power supply, 18... semiconductor substrate, 20... heater.
Claims (1)
板上に非晶質半導体を堆積する方法であつて、 上記基板の設定される真空チヤンバ内において
上記基板を挟んで設定された第１のプラズマ分解
手段の高周波電力を、上記堆積させる非晶質半導
体の膜質劣化を防止すべく低く設定し、 上記CH4ガスとSiH4ガスのうち比較的分解エ
ネルギーの大きいCH4ガスを、上記第１のプラズ
マ分解手段の高周波電力より高い高周波電力を有
する第２のプラズマ分解手段によつて予めプラズ
マ分解して、このCH4ガスをラジカル状態とし、 このラジカル状態とされた上記CH4ガスと上記
SiH4ガスとを上記第１のプラズマ分解手段の設
定された上記真空チヤンバ内へ導入し、これら導
入された混合ガスを上記第１のプラズマ分解手段
にて同時にプラズマ分解するようにしたことを特
徴とする非晶質半導体の製造方法。[Claims] 1. A method for depositing an amorphous semiconductor on a substrate by plasma decomposing CH 4 gas and SiH 4 gas, the method being set with the substrate sandwiched within a vacuum chamber in which the substrate is set. The high frequency power of the first plasma decomposition means is set low to prevent deterioration of the film quality of the amorphous semiconductor to be deposited, and the CH 4 gas, which has a relatively higher decomposition energy between the CH 4 gas and the SiH 4 gas , is used. is plasma decomposed in advance by a second plasma decomposition means having a high frequency power higher than the high frequency power of the first plasma decomposition means to convert the CH 4 gas into a radical state, and the CH 4 gas in the radical state is 4 gas and above
SiH 4 gas is introduced into the vacuum chamber in which the first plasma decomposition means is set, and the introduced mixed gas is simultaneously plasma decomposed by the first plasma decomposition means. A method for manufacturing an amorphous semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58100619A JPS59225517A (en) | 1983-06-06 | 1983-06-06 | Apparatus for manufacture of amorphous semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58100619A JPS59225517A (en) | 1983-06-06 | 1983-06-06 | Apparatus for manufacture of amorphous semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59225517A JPS59225517A (en) | 1984-12-18 |
| JPH0546093B2 true JPH0546093B2 (en) | 1993-07-13 |
Family
ID=14278852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58100619A Granted JPS59225517A (en) | 1983-06-06 | 1983-06-06 | Apparatus for manufacture of amorphous semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59225517A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61267315A (en) * | 1985-05-22 | 1986-11-26 | Anelva Corp | Plasma cvd device |
| JPS6321821A (en) * | 1986-07-15 | 1988-01-29 | Sanyo Electric Co Ltd | Method and apparatus for manufacture semiconductor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5362982A (en) * | 1976-11-17 | 1978-06-05 | Toshiba Corp | Plasma cvd apparatus |
| JPS57167631A (en) * | 1981-03-13 | 1982-10-15 | Fujitsu Ltd | Plasma vapor-phase growing method |
-
1983
- 1983-06-06 JP JP58100619A patent/JPS59225517A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5362982A (en) * | 1976-11-17 | 1978-06-05 | Toshiba Corp | Plasma cvd apparatus |
| JPS57167631A (en) * | 1981-03-13 | 1982-10-15 | Fujitsu Ltd | Plasma vapor-phase growing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59225517A (en) | 1984-12-18 |
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