JPS53115187A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53115187A JPS53115187A JP2927577A JP2927577A JPS53115187A JP S53115187 A JPS53115187 A JP S53115187A JP 2927577 A JP2927577 A JP 2927577A JP 2927577 A JP2927577 A JP 2927577A JP S53115187 A JPS53115187 A JP S53115187A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- wirngs
- punches
- sintering
- reaches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To so form the device as to readily take contact with wirngs and semiconductor substrate and lower production cost by making use of the characteristics that Al punches through N+ layers and reaches the substrate owing to heat treatment by sintering.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2927577A JPS5856977B2 (en) | 1977-03-18 | 1977-03-18 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2927577A JPS5856977B2 (en) | 1977-03-18 | 1977-03-18 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53115187A true JPS53115187A (en) | 1978-10-07 |
JPS5856977B2 JPS5856977B2 (en) | 1983-12-17 |
Family
ID=12271722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2927577A Expired JPS5856977B2 (en) | 1977-03-18 | 1977-03-18 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5856977B2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5566084U (en) * | 1978-10-30 | 1980-05-07 | ||
JPS55115357A (en) * | 1979-02-28 | 1980-09-05 | Nec Corp | Semiconductor device |
JPS5615038A (en) * | 1979-07-18 | 1981-02-13 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS56105660A (en) * | 1980-01-28 | 1981-08-22 | Nec Corp | Semiconductor device |
JPS57138153A (en) * | 1981-02-20 | 1982-08-26 | Nec Corp | Semiconductor integrated circuit device |
JPS57183051A (en) * | 1981-05-06 | 1982-11-11 | Seiko Epson Corp | Wiring in semiconductor device |
JPH01268121A (en) * | 1988-04-20 | 1989-10-25 | Sanyo Electric Co Ltd | Formation of ohmic electrode for silicon semiconductor element |
-
1977
- 1977-03-18 JP JP2927577A patent/JPS5856977B2/en not_active Expired
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5566084U (en) * | 1978-10-30 | 1980-05-07 | ||
JPS55115357A (en) * | 1979-02-28 | 1980-09-05 | Nec Corp | Semiconductor device |
JPS5615038A (en) * | 1979-07-18 | 1981-02-13 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS56105660A (en) * | 1980-01-28 | 1981-08-22 | Nec Corp | Semiconductor device |
JPS57138153A (en) * | 1981-02-20 | 1982-08-26 | Nec Corp | Semiconductor integrated circuit device |
JPS57183051A (en) * | 1981-05-06 | 1982-11-11 | Seiko Epson Corp | Wiring in semiconductor device |
JPS637465B2 (en) * | 1981-05-06 | 1988-02-17 | Seiko Epson Corp | |
JPH01268121A (en) * | 1988-04-20 | 1989-10-25 | Sanyo Electric Co Ltd | Formation of ohmic electrode for silicon semiconductor element |
Also Published As
Publication number | Publication date |
---|---|
JPS5856977B2 (en) | 1983-12-17 |
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