JPS53115187A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53115187A
JPS53115187A JP2927577A JP2927577A JPS53115187A JP S53115187 A JPS53115187 A JP S53115187A JP 2927577 A JP2927577 A JP 2927577A JP 2927577 A JP2927577 A JP 2927577A JP S53115187 A JPS53115187 A JP S53115187A
Authority
JP
Japan
Prior art keywords
semiconductor device
wirngs
punches
sintering
reaches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2927577A
Other languages
Japanese (ja)
Other versions
JPS5856977B2 (en
Inventor
Hiroshi Iwai
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2927577A priority Critical patent/JPS5856977B2/ja
Publication of JPS53115187A publication Critical patent/JPS53115187A/en
Publication of JPS5856977B2 publication Critical patent/JPS5856977B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To so form the device as to readily take contact with wirngs and semiconductor substrate and lower production cost by making use of the characteristics that Al punches through N+ layers and reaches the substrate owing to heat treatment by sintering.
COPYRIGHT: (C)1978,JPO&Japio
JP2927577A 1977-03-18 1977-03-18 Expired JPS5856977B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2927577A JPS5856977B2 (en) 1977-03-18 1977-03-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2927577A JPS5856977B2 (en) 1977-03-18 1977-03-18

Publications (2)

Publication Number Publication Date
JPS53115187A true JPS53115187A (en) 1978-10-07
JPS5856977B2 JPS5856977B2 (en) 1983-12-17

Family

ID=12271722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2927577A Expired JPS5856977B2 (en) 1977-03-18 1977-03-18

Country Status (1)

Country Link
JP (1) JPS5856977B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5566084U (en) * 1978-10-30 1980-05-07
JPS55115357A (en) * 1979-02-28 1980-09-05 Nec Corp Semiconductor device
JPS5615038A (en) * 1979-07-18 1981-02-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56105660A (en) * 1980-01-28 1981-08-22 Nec Corp Semiconductor device
JPS57138153A (en) * 1981-02-20 1982-08-26 Nec Corp Semiconductor integrated circuit device
JPS57183051A (en) * 1981-05-06 1982-11-11 Seiko Epson Corp Wiring in semiconductor device
JPH01268121A (en) * 1988-04-20 1989-10-25 Sanyo Electric Co Ltd Formation of ohmic electrode for silicon semiconductor element

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5566084U (en) * 1978-10-30 1980-05-07
JPS55115357A (en) * 1979-02-28 1980-09-05 Nec Corp Semiconductor device
JPS5615038A (en) * 1979-07-18 1981-02-13 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS56105660A (en) * 1980-01-28 1981-08-22 Nec Corp Semiconductor device
JPS57138153A (en) * 1981-02-20 1982-08-26 Nec Corp Semiconductor integrated circuit device
JPS57183051A (en) * 1981-05-06 1982-11-11 Seiko Epson Corp Wiring in semiconductor device
JPS637465B2 (en) * 1981-05-06 1988-02-17 Seiko Epson Corp
JPH01268121A (en) * 1988-04-20 1989-10-25 Sanyo Electric Co Ltd Formation of ohmic electrode for silicon semiconductor element

Also Published As

Publication number Publication date
JPS5856977B2 (en) 1983-12-17

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