JPS57183051A - Wiring in semiconductor device - Google Patents

Wiring in semiconductor device

Info

Publication number
JPS57183051A
JPS57183051A JP6799481A JP6799481A JPS57183051A JP S57183051 A JPS57183051 A JP S57183051A JP 6799481 A JP6799481 A JP 6799481A JP 6799481 A JP6799481 A JP 6799481A JP S57183051 A JPS57183051 A JP S57183051A
Authority
JP
Japan
Prior art keywords
connection
wirings
polycrystalline
layers
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6799481A
Other languages
Japanese (ja)
Other versions
JPS637465B2 (en
Inventor
Ryosuke Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP6799481A priority Critical patent/JPS57183051A/en
Publication of JPS57183051A publication Critical patent/JPS57183051A/en
Publication of JPS637465B2 publication Critical patent/JPS637465B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To reduce the space for connection by a method wherein, when the first and the second polycrystalline Si layers with the different conductive types come into contact with each other to be connected, a metal is placed on this connection to be heat-treated so that said Si layers may be connected with each other through the intermediary of the spike of the metal infiltrated into said Si layers. CONSTITUTION:When the polycrystalline Si wirings 31 and 32 come into contact with each other to be connected, the ohmic connection is obstructed by the resultant PN joint, therefore a metal such as Al placed on the connection is heat-treated at 300-500 deg.C making Al infiltrate into the ends of the wirings 31 and 32 to make the ends conductive through the intermediary of the resultant spike of Al. Through these procedures, the integration of IC and the like may be improved by means of the direct ohmic connection between the polycrystalline Si wirings with the different conductive types.
JP6799481A 1981-05-06 1981-05-06 Wiring in semiconductor device Granted JPS57183051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6799481A JPS57183051A (en) 1981-05-06 1981-05-06 Wiring in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6799481A JPS57183051A (en) 1981-05-06 1981-05-06 Wiring in semiconductor device

Publications (2)

Publication Number Publication Date
JPS57183051A true JPS57183051A (en) 1982-11-11
JPS637465B2 JPS637465B2 (en) 1988-02-17

Family

ID=13361021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6799481A Granted JPS57183051A (en) 1981-05-06 1981-05-06 Wiring in semiconductor device

Country Status (1)

Country Link
JP (1) JPS57183051A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115187A (en) * 1977-03-18 1978-10-07 Toshiba Corp Semiconductor device
JPS5419382A (en) * 1977-07-14 1979-02-14 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115187A (en) * 1977-03-18 1978-10-07 Toshiba Corp Semiconductor device
JPS5419382A (en) * 1977-07-14 1979-02-14 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS637465B2 (en) 1988-02-17

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