JPS57183051A - Wiring in semiconductor device - Google Patents
Wiring in semiconductor deviceInfo
- Publication number
- JPS57183051A JPS57183051A JP6799481A JP6799481A JPS57183051A JP S57183051 A JPS57183051 A JP S57183051A JP 6799481 A JP6799481 A JP 6799481A JP 6799481 A JP6799481 A JP 6799481A JP S57183051 A JPS57183051 A JP S57183051A
- Authority
- JP
- Japan
- Prior art keywords
- connection
- wirings
- polycrystalline
- layers
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To reduce the space for connection by a method wherein, when the first and the second polycrystalline Si layers with the different conductive types come into contact with each other to be connected, a metal is placed on this connection to be heat-treated so that said Si layers may be connected with each other through the intermediary of the spike of the metal infiltrated into said Si layers. CONSTITUTION:When the polycrystalline Si wirings 31 and 32 come into contact with each other to be connected, the ohmic connection is obstructed by the resultant PN joint, therefore a metal such as Al placed on the connection is heat-treated at 300-500 deg.C making Al infiltrate into the ends of the wirings 31 and 32 to make the ends conductive through the intermediary of the resultant spike of Al. Through these procedures, the integration of IC and the like may be improved by means of the direct ohmic connection between the polycrystalline Si wirings with the different conductive types.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6799481A JPS57183051A (en) | 1981-05-06 | 1981-05-06 | Wiring in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6799481A JPS57183051A (en) | 1981-05-06 | 1981-05-06 | Wiring in semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57183051A true JPS57183051A (en) | 1982-11-11 |
JPS637465B2 JPS637465B2 (en) | 1988-02-17 |
Family
ID=13361021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6799481A Granted JPS57183051A (en) | 1981-05-06 | 1981-05-06 | Wiring in semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57183051A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53115187A (en) * | 1977-03-18 | 1978-10-07 | Toshiba Corp | Semiconductor device |
JPS5419382A (en) * | 1977-07-14 | 1979-02-14 | Nec Corp | Semiconductor device |
-
1981
- 1981-05-06 JP JP6799481A patent/JPS57183051A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53115187A (en) * | 1977-03-18 | 1978-10-07 | Toshiba Corp | Semiconductor device |
JPS5419382A (en) * | 1977-07-14 | 1979-02-14 | Nec Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS637465B2 (en) | 1988-02-17 |
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