JPS5416979A - Production of semiconuctor device - Google Patents

Production of semiconuctor device

Info

Publication number
JPS5416979A
JPS5416979A JP8163777A JP8163777A JPS5416979A JP S5416979 A JPS5416979 A JP S5416979A JP 8163777 A JP8163777 A JP 8163777A JP 8163777 A JP8163777 A JP 8163777A JP S5416979 A JPS5416979 A JP S5416979A
Authority
JP
Japan
Prior art keywords
production
semiconuctor
electrode
corrosion
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8163777A
Other languages
Japanese (ja)
Other versions
JPS5950090B2 (en
Inventor
Hiroshi Mitsuoka
Masao Hariguchi
Yoshiharu Osuga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8163777A priority Critical patent/JPS5950090B2/en
Publication of JPS5416979A publication Critical patent/JPS5416979A/en
Publication of JPS5950090B2 publication Critical patent/JPS5950090B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To realize the process for production of semiconductor device capable of making the outermost electrode of the semiconductor element to an Au electrode having superior properties against oxidation and corrosion.
COPYRIGHT: (C)1979,JPO&Japio
JP8163777A 1977-07-07 1977-07-07 Manufacturing method of semiconductor device Expired JPS5950090B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8163777A JPS5950090B2 (en) 1977-07-07 1977-07-07 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8163777A JPS5950090B2 (en) 1977-07-07 1977-07-07 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5416979A true JPS5416979A (en) 1979-02-07
JPS5950090B2 JPS5950090B2 (en) 1984-12-06

Family

ID=13751840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8163777A Expired JPS5950090B2 (en) 1977-07-07 1977-07-07 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5950090B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089418A (en) * 1983-10-20 1985-05-20 Sumitomo Chem Co Ltd Sustained release carcinostatic agent
JP2007194514A (en) * 2006-01-23 2007-08-02 Mitsubishi Electric Corp Method for manufacturing semiconductor device
JP2010021171A (en) * 2008-07-08 2010-01-28 Renesas Technology Corp Method for manufacturing semiconductor device, and semiconductor manufacturing apparatus used for the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089418A (en) * 1983-10-20 1985-05-20 Sumitomo Chem Co Ltd Sustained release carcinostatic agent
JP2007194514A (en) * 2006-01-23 2007-08-02 Mitsubishi Electric Corp Method for manufacturing semiconductor device
US8183144B2 (en) 2006-01-23 2012-05-22 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
JP2010021171A (en) * 2008-07-08 2010-01-28 Renesas Technology Corp Method for manufacturing semiconductor device, and semiconductor manufacturing apparatus used for the same

Also Published As

Publication number Publication date
JPS5950090B2 (en) 1984-12-06

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