Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP3213277ApriorityCriticalpatent/JPS53117986A/en
Publication of JPS53117986ApublicationCriticalpatent/JPS53117986A/en
PURPOSE: To reduce electrode contact area and facilitate the production of circuit pattern masks by introducing N2 into the oxide film near the electrode connecting parts connecting to semiconductor regions.
COPYRIGHT: (C)1978,JPO&Japio
JP3213277A1977-03-251977-03-25Production of semiconductor device
PendingJPS53117986A
(en)