JPS57128036A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57128036A
JPS57128036A JP56012553A JP1255381A JPS57128036A JP S57128036 A JPS57128036 A JP S57128036A JP 56012553 A JP56012553 A JP 56012553A JP 1255381 A JP1255381 A JP 1255381A JP S57128036 A JPS57128036 A JP S57128036A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
layer
ions
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56012553A
Other languages
Japanese (ja)
Inventor
Yutaka Tabata
Tsunenori Yamauchi
Makoto Serigano
Tsuneo Funatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56012553A priority Critical patent/JPS57128036A/en
Publication of JPS57128036A publication Critical patent/JPS57128036A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent the collection of contaminated substance or the like ionized at the molding time in the boundary with an epitaxial layer by covering a semiconductor substrtate with a phosphorus silicate glass film, then covering the film with an Si nitrided film, and then sealing it with resin. CONSTITUTION:An element is formed on a semiconductor substrate 1, a phosphorus silicate glass film 10 is covered on the substrate, an Si3N4 film 21 is then covered on the film, and resin 11 is then molded. Since the ions of OH<-> produced at the molding time can be trapped by the film 21 through this step, the ions do not reach the boundary with an epitaxial layer 2. Accordingly, since no inversion layer is produced on the surface of the layer 2, it can prevent the deterioration in the characteristics of a semiconductor device.
JP56012553A 1981-01-30 1981-01-30 Manufacture of semiconductor device Pending JPS57128036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56012553A JPS57128036A (en) 1981-01-30 1981-01-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56012553A JPS57128036A (en) 1981-01-30 1981-01-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57128036A true JPS57128036A (en) 1982-08-09

Family

ID=11808522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56012553A Pending JPS57128036A (en) 1981-01-30 1981-01-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57128036A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62196548A (en) * 1986-02-21 1987-08-29 Dowa:Kk Direct fire type water heater

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469964A (en) * 1977-11-15 1979-06-05 Toshiba Corp Production of semiconductor device
JPS5472671A (en) * 1977-11-22 1979-06-11 Mitsubishi Electric Corp Epitaxial growing unit of molecule ray
JPS5519850A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Semiconductor
JPS5530803A (en) * 1978-08-25 1980-03-04 Hitachi Ltd Producing method of electronic parts

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5469964A (en) * 1977-11-15 1979-06-05 Toshiba Corp Production of semiconductor device
JPS5472671A (en) * 1977-11-22 1979-06-11 Mitsubishi Electric Corp Epitaxial growing unit of molecule ray
JPS5519850A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Semiconductor
JPS5530803A (en) * 1978-08-25 1980-03-04 Hitachi Ltd Producing method of electronic parts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62196548A (en) * 1986-02-21 1987-08-29 Dowa:Kk Direct fire type water heater

Similar Documents

Publication Publication Date Title
JPS57128036A (en) Manufacture of semiconductor device
JPS5562771A (en) Integrated circuit device
JPS54161282A (en) Manufacture of mos semiconductor device
JPS5688358A (en) Manufacture of semiconductor device
JPS5671971A (en) Mos integrated circuit system and preparation method thereof
JPS5726467A (en) Manufacture of semiconductor device
JPS56103445A (en) Production of semiconductor device
JPS6473738A (en) Manufacture of semiconductor device
JPS56147472A (en) Read only semiconductor memory
JPS5636145A (en) Thin semiconductor integrated circuit device and its manufacture
JPS56104468A (en) Manufacture of mos semiconductor device
JPS56125846A (en) Surface treatment of semiconductor
JPS56105651A (en) Manufacture of semiconductor device
JPS56135970A (en) Semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS57153462A (en) Manufacture of semiconductor integrated circuit device
JPS57194523A (en) Manufacture of semiconductor device
JPS56105663A (en) Manufacture of ic device by complementary type field effect transistor
JPS57208147A (en) Manufacture of semiconductor device
GB2000638A (en) Semiconductor device
JPS5775462A (en) Manufacture of semiconductor device
JPS5661164A (en) Mos semiconductor device
JPS57106131A (en) Manufacture of semiconductor device
JPS536579A (en) Semiconductor device
JPS5595365A (en) Manufacture of semiconductor device