JPS5775462A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5775462A
JPS5775462A JP15099680A JP15099680A JPS5775462A JP S5775462 A JPS5775462 A JP S5775462A JP 15099680 A JP15099680 A JP 15099680A JP 15099680 A JP15099680 A JP 15099680A JP S5775462 A JPS5775462 A JP S5775462A
Authority
JP
Japan
Prior art keywords
film
substrate
concave part
gate
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15099680A
Other languages
Japanese (ja)
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15099680A priority Critical patent/JPS5775462A/en
Publication of JPS5775462A publication Critical patent/JPS5775462A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent contamination of a gate electrode and its interface by leaving an Si nitride film in a concave part, and forming a source and a drain of a concave MOSFET and a gate with remaining nitride film as a mask by self-alignment. CONSTITUTION:An oxide film 22 is formed on an Si substrate 21. Then, an opening 23 is formed at a part which is to become a device region. Then an oxide film 24 is formed on the exposed substrate 21. The part of the film 24 on which gate electrode is formed is removed, and an opening 25 is provided. Then the exposed substrate 21 is etched and the concave part 26 is formed. Thereafter a gate oxide film 27, a poly crystal Si film 28, and an Si nitride film 29 are sequentially formed. Then reactive ion etching is performed on the film 29, and the film 29 is left only on the concave part 26. The films 28 and 24 are removed with the remaining film 29 as a mask, and the substrate 21 is exposed. Then the entire film 29 is removed and the sources 30 and 31 are formed by self-alignment. In this method, the MOSFET having little contamination at the interface can be obtained.
JP15099680A 1980-10-28 1980-10-28 Manufacture of semiconductor device Pending JPS5775462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15099680A JPS5775462A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15099680A JPS5775462A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5775462A true JPS5775462A (en) 1982-05-12

Family

ID=15508996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15099680A Pending JPS5775462A (en) 1980-10-28 1980-10-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5775462A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160125A (en) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160125A (en) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp Manufacture of semiconductor device

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