JPS5775462A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5775462A JPS5775462A JP15099680A JP15099680A JPS5775462A JP S5775462 A JPS5775462 A JP S5775462A JP 15099680 A JP15099680 A JP 15099680A JP 15099680 A JP15099680 A JP 15099680A JP S5775462 A JPS5775462 A JP S5775462A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- concave part
- gate
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 150000004767 nitrides Chemical class 0.000 abstract 3
- 238000011109 contamination Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent contamination of a gate electrode and its interface by leaving an Si nitride film in a concave part, and forming a source and a drain of a concave MOSFET and a gate with remaining nitride film as a mask by self-alignment. CONSTITUTION:An oxide film 22 is formed on an Si substrate 21. Then, an opening 23 is formed at a part which is to become a device region. Then an oxide film 24 is formed on the exposed substrate 21. The part of the film 24 on which gate electrode is formed is removed, and an opening 25 is provided. Then the exposed substrate 21 is etched and the concave part 26 is formed. Thereafter a gate oxide film 27, a poly crystal Si film 28, and an Si nitride film 29 are sequentially formed. Then reactive ion etching is performed on the film 29, and the film 29 is left only on the concave part 26. The films 28 and 24 are removed with the remaining film 29 as a mask, and the substrate 21 is exposed. Then the entire film 29 is removed and the sources 30 and 31 are formed by self-alignment. In this method, the MOSFET having little contamination at the interface can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15099680A JPS5775462A (en) | 1980-10-28 | 1980-10-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15099680A JPS5775462A (en) | 1980-10-28 | 1980-10-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5775462A true JPS5775462A (en) | 1982-05-12 |
Family
ID=15508996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15099680A Pending JPS5775462A (en) | 1980-10-28 | 1980-10-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5775462A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160125A (en) * | 1984-01-30 | 1985-08-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1980
- 1980-10-28 JP JP15099680A patent/JPS5775462A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160125A (en) * | 1984-01-30 | 1985-08-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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