JPS55160470A - Manufacture of mis type semiconductor device - Google Patents
Manufacture of mis type semiconductor deviceInfo
- Publication number
- JPS55160470A JPS55160470A JP7140580A JP7140580A JPS55160470A JP S55160470 A JPS55160470 A JP S55160470A JP 7140580 A JP7140580 A JP 7140580A JP 7140580 A JP7140580 A JP 7140580A JP S55160470 A JPS55160470 A JP S55160470A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- regions
- semiconductor device
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To reduce the step of an oxide film on the surface of a substrate in the MIS type semiconductor device by forming a film for controlling the impurity diffusing amount on a polycrystalline Si film becoming a gate electrode. CONSTITUTION:An oxide film 2 is formed on an Si semiconductor substrate 1, only the film 2 on the transistor forming region 1a is selectively removed, and the surface is exposed. Then, a gate oxide film 3 is formed on the entire surface of the substrate 1, and a polycrystalline Si film 4, a nitride film 5 and an oxide film 6 are formed thereon. Then, the film 6 is partly removed to retain only the gate region to be formed thereon, and with the retained film 6 as a mask the films 5, 4 are etched. Thereafter, the films 6, 3 are etched to exposed the surfaces 1s, 1d to be formed with source and drain regions, and the gate region is simultaneously formed. Then, impurity is diffused on the surfaces 1s and 1d to form source and drain regions 7 and 8. At this time a thick oxide film 9 is selectively formed on the regions 7 and 8. In this manner, the steps formed on the field oxide film and the regions 8, 9 can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7140580A JPS55160470A (en) | 1980-05-30 | 1980-05-30 | Manufacture of mis type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7140580A JPS55160470A (en) | 1980-05-30 | 1980-05-30 | Manufacture of mis type semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8490473A Division JPS5615148B2 (en) | 1973-07-30 | 1973-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55160470A true JPS55160470A (en) | 1980-12-13 |
Family
ID=13459566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7140580A Pending JPS55160470A (en) | 1980-05-30 | 1980-05-30 | Manufacture of mis type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55160470A (en) |
-
1980
- 1980-05-30 JP JP7140580A patent/JPS55160470A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE BULLETIN#V14#N10 * |
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