JPS6473738A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6473738A JPS6473738A JP22974887A JP22974887A JPS6473738A JP S6473738 A JPS6473738 A JP S6473738A JP 22974887 A JP22974887 A JP 22974887A JP 22974887 A JP22974887 A JP 22974887A JP S6473738 A JPS6473738 A JP S6473738A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- film
- oxide film
- poly
- bottom part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE:To increase the adhesiveness of a poly Si film for filling a groove by a method wherein, after an oxide film is formed on the bottom part of the side surface of the groove formed in a semiconductor substrate, a channel stop part is formed by ion-implantation. CONSTITUTION:A thermal oxide film 2 and an Si nitride film 3 are formed on a semiconductor substrate 1. After that, an Si groove 4 is formed. Then, an Si oxide film 5 is formed on the side surface and the bottom surface of the groove 4. After that, an ion-implantation is performed on the part of the groove 4 from over the films 2 and 3. Then, the film 5 on the bottom part of the groove 4 is removed to expose the surface of the high-concentration substrate 1. When, an insulating oxide film 9 is formed on the bottom part of the groove 4 and at the same time, a channel stop part 10 is formed. Then, a poly Si film is deposited in the groove 4 to fill the interior of the groove 4. Then, the poly Si film 6 is removed to flatten the surface of the groove 4. According to this manufacturing method, a considerable part of the interior of the groove can be filled with the insulating oxide film. Accordingly, the adhesiveness of the Poly Si film thereon is increased and a deep element isolation can be expected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22974887A JPS6473738A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22974887A JPS6473738A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473738A true JPS6473738A (en) | 1989-03-20 |
Family
ID=16897069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22974887A Pending JPS6473738A (en) | 1987-09-16 | 1987-09-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473738A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020056659A (en) * | 2000-12-29 | 2002-07-10 | 박종섭 | Method for forming element isolating film of semicoductor device |
| KR100380149B1 (en) * | 2000-12-26 | 2003-04-11 | 주식회사 하이닉스반도체 | Method of forming a isolation layer in a semiconductor device |
| JP2003197734A (en) * | 2001-12-20 | 2003-07-11 | Tobu Denshi Kk | Formation of isolation film of semiconductor device |
| AU778242B2 (en) * | 1999-12-15 | 2004-11-25 | Sumitomo Electric Industries, Ltd. | Optical fiber transmission line and optical cable including the same |
-
1987
- 1987-09-16 JP JP22974887A patent/JPS6473738A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU778242B2 (en) * | 1999-12-15 | 2004-11-25 | Sumitomo Electric Industries, Ltd. | Optical fiber transmission line and optical cable including the same |
| KR100380149B1 (en) * | 2000-12-26 | 2003-04-11 | 주식회사 하이닉스반도체 | Method of forming a isolation layer in a semiconductor device |
| KR20020056659A (en) * | 2000-12-29 | 2002-07-10 | 박종섭 | Method for forming element isolating film of semicoductor device |
| JP2003197734A (en) * | 2001-12-20 | 2003-07-11 | Tobu Denshi Kk | Formation of isolation film of semiconductor device |
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