JPS6465853A - Method of filling fine hole with metal - Google Patents

Method of filling fine hole with metal

Info

Publication number
JPS6465853A
JPS6465853A JP22194787A JP22194787A JPS6465853A JP S6465853 A JPS6465853 A JP S6465853A JP 22194787 A JP22194787 A JP 22194787A JP 22194787 A JP22194787 A JP 22194787A JP S6465853 A JPS6465853 A JP S6465853A
Authority
JP
Japan
Prior art keywords
hole
base
film
metal
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22194787A
Other languages
Japanese (ja)
Inventor
Susumu Tsujiku
Eisuke Nishitani
Mitsuo Nakatani
Masaaki Maehara
Koichiro Mizukami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22194787A priority Critical patent/JPS6465853A/en
Publication of JPS6465853A publication Critical patent/JPS6465853A/en
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To fill a hole so as to provide a good continuity between a base metal and a hole filling metal by a method wherein, after a sputter etching treatment, a chemical etching treatment and a heating treatment in a hydrogen- containing atmosphere are performed in order on an exposed base, a selective CVD is performed. CONSTITUTION:An SiO2 film 2 is formed on an Al base wiring 1 by a plasma CVD method and so on and thereafter, a hole 3 is opened by a photoetching process and a thin oxide film 4 is formed on the Al base of the bottom part of the hole. Then, the base is bombarded with Ar<+> ions 5 using a plasma treating unit to perform a sputter etching and the film 4 on the bottom part of the hole is removed and at the same time, sputtered Al 6 is adhered on the sidewall part of the hole and the film 2. Then, a chemical etching (dry) is performed to remove the Al 6 on the sidewall of the hole and film 2 and at the same time, to adhere an etching gas residue 7. Then, after a heating treatment is performed in a hydrogen-containing atmosphere to remove the residue 7, a selective CVD is performed to fill the hole 3 with W8. Thereby, the continuity between the base metal and the hole filling metal can be improved.
JP22194787A 1987-09-07 1987-09-07 Method of filling fine hole with metal Pending JPS6465853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22194787A JPS6465853A (en) 1987-09-07 1987-09-07 Method of filling fine hole with metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22194787A JPS6465853A (en) 1987-09-07 1987-09-07 Method of filling fine hole with metal

Publications (1)

Publication Number Publication Date
JPS6465853A true JPS6465853A (en) 1989-03-13

Family

ID=16774648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22194787A Pending JPS6465853A (en) 1987-09-07 1987-09-07 Method of filling fine hole with metal

Country Status (1)

Country Link
JP (1) JPS6465853A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010051844A (en) * 1999-11-22 2001-06-25 가네꼬 히사시 Method and apparatus for manufacturing semiconductor device capable of expelling argon gas and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010051844A (en) * 1999-11-22 2001-06-25 가네꼬 히사시 Method and apparatus for manufacturing semiconductor device capable of expelling argon gas and apparatus

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