JPS6465853A - Method of filling fine hole with metal - Google Patents
Method of filling fine hole with metalInfo
- Publication number
- JPS6465853A JPS6465853A JP22194787A JP22194787A JPS6465853A JP S6465853 A JPS6465853 A JP S6465853A JP 22194787 A JP22194787 A JP 22194787A JP 22194787 A JP22194787 A JP 22194787A JP S6465853 A JPS6465853 A JP S6465853A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- base
- film
- metal
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To fill a hole so as to provide a good continuity between a base metal and a hole filling metal by a method wherein, after a sputter etching treatment, a chemical etching treatment and a heating treatment in a hydrogen- containing atmosphere are performed in order on an exposed base, a selective CVD is performed. CONSTITUTION:An SiO2 film 2 is formed on an Al base wiring 1 by a plasma CVD method and so on and thereafter, a hole 3 is opened by a photoetching process and a thin oxide film 4 is formed on the Al base of the bottom part of the hole. Then, the base is bombarded with Ar<+> ions 5 using a plasma treating unit to perform a sputter etching and the film 4 on the bottom part of the hole is removed and at the same time, sputtered Al 6 is adhered on the sidewall part of the hole and the film 2. Then, a chemical etching (dry) is performed to remove the Al 6 on the sidewall of the hole and film 2 and at the same time, to adhere an etching gas residue 7. Then, after a heating treatment is performed in a hydrogen-containing atmosphere to remove the residue 7, a selective CVD is performed to fill the hole 3 with W8. Thereby, the continuity between the base metal and the hole filling metal can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22194787A JPS6465853A (en) | 1987-09-07 | 1987-09-07 | Method of filling fine hole with metal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22194787A JPS6465853A (en) | 1987-09-07 | 1987-09-07 | Method of filling fine hole with metal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465853A true JPS6465853A (en) | 1989-03-13 |
Family
ID=16774648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22194787A Pending JPS6465853A (en) | 1987-09-07 | 1987-09-07 | Method of filling fine hole with metal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465853A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010051844A (en) * | 1999-11-22 | 2001-06-25 | 가네꼬 히사시 | Method and apparatus for manufacturing semiconductor device capable of expelling argon gas and apparatus |
-
1987
- 1987-09-07 JP JP22194787A patent/JPS6465853A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010051844A (en) * | 1999-11-22 | 2001-06-25 | 가네꼬 히사시 | Method and apparatus for manufacturing semiconductor device capable of expelling argon gas and apparatus |
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