JPS57109341A - Semiconductor integrated circuit and manufacture thereof - Google Patents

Semiconductor integrated circuit and manufacture thereof

Info

Publication number
JPS57109341A
JPS57109341A JP55183768A JP18376880A JPS57109341A JP S57109341 A JPS57109341 A JP S57109341A JP 55183768 A JP55183768 A JP 55183768A JP 18376880 A JP18376880 A JP 18376880A JP S57109341 A JPS57109341 A JP S57109341A
Authority
JP
Japan
Prior art keywords
sio2 film
integrated circuit
semiconductor integrated
substrate
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55183768A
Other languages
Japanese (ja)
Inventor
Tadashi Serikawa
Hiroyuki Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55183768A priority Critical patent/JPS57109341A/en
Publication of JPS57109341A publication Critical patent/JPS57109341A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To easily perform a microscopic work on the SiO2 film for the subject semiconductor integrated circuit by a method wherein the SiO2 film of low density is formed using a magnetron sputtering method. CONSTITUTION:A substrate supporting pedestal 14 is placed in a magnetron sputtering container 11. Then, a substrate 15 is placed on the supporting pedestal 14, argon gas is brought in from a gas introducing port 16 and exhausted from an exhaust port 17. At this time, voltage is applied in between an electrode 12 and the container 11. Then, when the SiO2 film is formed on the substrate 11 while maintaining the argon pressure in the range of 0.6Pa-2.5Pa, the density of the SiO2 film is turned to 2.15-2.00g/cm<3>. A microscopic work by etching can be performed easily on the SiO2 film having the above density.
JP55183768A 1980-12-26 1980-12-26 Semiconductor integrated circuit and manufacture thereof Pending JPS57109341A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183768A JPS57109341A (en) 1980-12-26 1980-12-26 Semiconductor integrated circuit and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183768A JPS57109341A (en) 1980-12-26 1980-12-26 Semiconductor integrated circuit and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57109341A true JPS57109341A (en) 1982-07-07

Family

ID=16141619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183768A Pending JPS57109341A (en) 1980-12-26 1980-12-26 Semiconductor integrated circuit and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57109341A (en)

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