JPS6465852A - Method of filling fine hole with metal - Google Patents

Method of filling fine hole with metal

Info

Publication number
JPS6465852A
JPS6465852A JP22194687A JP22194687A JPS6465852A JP S6465852 A JPS6465852 A JP S6465852A JP 22194687 A JP22194687 A JP 22194687A JP 22194687 A JP22194687 A JP 22194687A JP S6465852 A JPS6465852 A JP S6465852A
Authority
JP
Japan
Prior art keywords
hole
metal
fine hole
cvd
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22194687A
Other languages
Japanese (ja)
Inventor
Susumu Tsujiku
Eisuke Nishitani
Mitsuo Nakatani
Masaaki Maehara
Koichiro Mizukami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22194687A priority Critical patent/JPS6465852A/en
Publication of JPS6465852A publication Critical patent/JPS6465852A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To fill selectively a fine hole with a metal in a short time by a method wherein, after the sidewall of the fine hole is covered with a base material by sputtering the base material of the bottom part of the fine hole, a selective CVD of a metal is performed. CONSTITUTION:An SiO2 film 2 is formed on an Al base wiring 1 by a plasma CVD method and so on and thereafter, a hole 3 is opened by a photoetching process. Then, the obtained sample is bombarded with Ar<+> ions 4 using a plasma treating unit, whereby the base Al of the bottom part of the hole is sputtered and is adhered on the sidewall if the hole. Then, a selective CVD of W5 is performed on the obtained sample using a cold wall type CVD unit to finish a hole filling. In such a way, the fine hole can be filled selectively with a metal in a short time and moreover, the continuity between the hole filling metal and an Al wiring to be provided in an upper layer can be improved.
JP22194687A 1987-09-07 1987-09-07 Method of filling fine hole with metal Pending JPS6465852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22194687A JPS6465852A (en) 1987-09-07 1987-09-07 Method of filling fine hole with metal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22194687A JPS6465852A (en) 1987-09-07 1987-09-07 Method of filling fine hole with metal

Publications (1)

Publication Number Publication Date
JPS6465852A true JPS6465852A (en) 1989-03-13

Family

ID=16774632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22194687A Pending JPS6465852A (en) 1987-09-07 1987-09-07 Method of filling fine hole with metal

Country Status (1)

Country Link
JP (1) JPS6465852A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02267933A (en) * 1989-04-07 1990-11-01 Nec Corp Wiring in a viahole and its formation
US5366929A (en) * 1993-05-28 1994-11-22 Cypress Semiconductor Corp. Method for making reliable selective via fills

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02267933A (en) * 1989-04-07 1990-11-01 Nec Corp Wiring in a viahole and its formation
US5366929A (en) * 1993-05-28 1994-11-22 Cypress Semiconductor Corp. Method for making reliable selective via fills

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