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Priority to TW085114974ApriorityCriticalpatent/TW327693B/en
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A plasma treatment method used to low down the resistance of TiN. It includes: - Form TiN layer on substrate, in which, the TiN layer is formed inside the 1st chamber; - Purify TiN layer to form TiN layer with low resistance; In which, the purity TiN layer is proceeded inside the 2nd chamber, and the temperature of 2nd chamber is different from 1st chamber.
TW085114974A1996-12-041996-12-04The plasma treatment method for lowing down resistance of TiN
TW327693B
(en)