JPS56167324A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56167324A JPS56167324A JP7056380A JP7056380A JPS56167324A JP S56167324 A JPS56167324 A JP S56167324A JP 7056380 A JP7056380 A JP 7056380A JP 7056380 A JP7056380 A JP 7056380A JP S56167324 A JPS56167324 A JP S56167324A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- core tube
- diffusion
- mask
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000002159 abnormal effect Effects 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000012159 carrier gas Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 230000035515 penetration Effects 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000001143 conditioned effect Effects 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent occurrence of abnormal defect and cracks on an oxide film, in a high-temperature and long-time diffusion treatment process using the oxide film as a mask, by causing a carrier gas to contain oxygen by employing an polycrystalline Si tube for a core tube of a diffusion furnace. CONSTITUTION:Formation of a penetration diffusion layer which is so deep as to penetrate a substrate wafer 1, such as an elements separation diffusion layer 4 in a planar type thyrister, etc., is utilized for a process using an oxide film 2 as a mask. In a process of this type which requires a high temperature and a long time, a tubular body of poly Si is used as a core tube 40 of a diffusion furnace containing the wafer 1. A carrier gas is made to contain 10vol% or more of oxygen and is so conditioned as to allow an SiO2 film to be formed on inside wall surface of the poly Si core tube. It is possible, by doing so, to prevent occurrence of an abnormal defect and crack on the oxide film due to the contamination by an alkali in the process of penetration treatment of boron, etc. to be executed at such a high temperature as 1,200-1,400 deg.C and for such a long time as 30hr or more, and therefore, it becomes possible to improve production yield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7056380A JPS56167324A (en) | 1980-05-26 | 1980-05-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7056380A JPS56167324A (en) | 1980-05-26 | 1980-05-26 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56167324A true JPS56167324A (en) | 1981-12-23 |
| JPS6152564B2 JPS6152564B2 (en) | 1986-11-13 |
Family
ID=13435124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7056380A Granted JPS56167324A (en) | 1980-05-26 | 1980-05-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56167324A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09120948A (en) * | 1996-09-30 | 1997-05-06 | Hitachi Ltd | Wafer support device of semiconductor wafer heat treatment system and semiconductor wafer heat treatment system |
-
1980
- 1980-05-26 JP JP7056380A patent/JPS56167324A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09120948A (en) * | 1996-09-30 | 1997-05-06 | Hitachi Ltd | Wafer support device of semiconductor wafer heat treatment system and semiconductor wafer heat treatment system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152564B2 (en) | 1986-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IE811531L (en) | Manufacturing a semiconductor device using a gas mixture | |
| JPS56161646A (en) | Manufacture of semiconductor device | |
| GB1518986A (en) | Process and apparatus for doping semiconductor materials | |
| JPS57155726A (en) | Manufacture of semiconductor device | |
| JPS56167324A (en) | Manufacture of semiconductor device | |
| JPS5659694A (en) | Manufacture of thin film | |
| JPS5737830A (en) | Manufacture of semiconductor device | |
| JPS56105652A (en) | Manufacture of semiconductor device | |
| JPS644019A (en) | Manufacture of semiconductor device | |
| JPS6435929A (en) | Manufacture of semiconductor device | |
| JPS5656641A (en) | Manufacture of semiconductor device | |
| JPS5633840A (en) | Manufacture of semiconductor device | |
| JPS6430234A (en) | Apparatus for manufacturing semiconductor device | |
| US3287188A (en) | Method for producing a boron diffused sillicon transistor | |
| JPS57148344A (en) | Manufacturing equipment for semiconductor | |
| JPS5762537A (en) | Forming method for film | |
| JPS52122479A (en) | Etching solution of silicon | |
| JPS5710242A (en) | Manufacture of semiconductor device | |
| JPS57180135A (en) | Manufacture of semiconductor device | |
| JPS57155735A (en) | Manufacture of semiconductor device | |
| JPS54101280A (en) | Manufacture for semiconductor device | |
| JPS543470A (en) | Etching method | |
| JPS56101744A (en) | Manufacture of semiconductor device | |
| JPS5691474A (en) | Manufacture of semiconductor memory | |
| JPS57193028A (en) | Manufacture of semiconductor device |