JPS60194527A - Heat treating device - Google Patents
Heat treating deviceInfo
- Publication number
- JPS60194527A JPS60194527A JP4906284A JP4906284A JPS60194527A JP S60194527 A JPS60194527 A JP S60194527A JP 4906284 A JP4906284 A JP 4906284A JP 4906284 A JP4906284 A JP 4906284A JP S60194527 A JPS60194527 A JP S60194527A
- Authority
- JP
- Japan
- Prior art keywords
- fork
- furnace
- wafer
- core tube
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 abstract description 9
- 239000010453 quartz Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は熱処理装置に係り、特に電気炉を用いた熱処理
（酸化・拡散・アニール等）において、炉芯管高温部へ
空気が侵入することを低減するのに好適な熱処理装置に
関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a heat treatment device, and particularly to a heat treatment device that prevents air from entering the high temperature section of the furnace core tube during heat treatment (oxidation, diffusion, annealing, etc.) using an electric furnace. The present invention relates to a heat treatment apparatus suitable for reducing heat.
従来の例えばソフトランディング機構を備えた横形電気
炉を第１図に示す。本装置を用いてウェーハの熱処理を
行う場合、第１図に示すようにウェーハ１を乗せたサセ
プタ２をソフトランディング架台３に固定したフォーク
４にセットし、搬送機構５により横形電気炉（ヒータ６
、均熱管７）炉芯管９内へ挿入する。所定時間熱処理し
た後ウェーハ１を架台３やフォーク４とともに引き出す
。A conventional horizontal electric furnace equipped with, for example, a soft landing mechanism is shown in FIG. When heat-treating a wafer using this apparatus, as shown in FIG.
, soaking tube 7) Insert into the furnace core tube 9. After heat treatment for a predetermined time, the wafer 1 is pulled out together with the pedestal 3 and the fork 4.
このとき、フォークは、高純度石英で、熱処理ウェーハ
と同径又はそれ以上の径を有する管を使用している。フ
ォーク管内へ挿入するときは炉口に蓋を設けることがで
きず、そのため、炉芯管内へは多量の空気が侵入する。At this time, the fork uses a tube made of high-purity quartz and having a diameter equal to or larger than that of the heat-treated wafer. When inserting into the fork tube, a lid cannot be provided at the furnace mouth, so a large amount of air enters the furnace core tube.
管内、特に炉口付近では雰囲気ガスが不均一となり、例
えば薄い酸化膜を形成する場合、ウェーハ面内の膜厚分
布が１０％以上不均一となる原因となっていた。The atmospheric gas becomes non-uniform within the tube, especially near the furnace opening, which causes, for example, when forming a thin oxide film, the film thickness distribution within the wafer surface to become non-uniform by 10% or more.
本発明の目的は、上記従来の問題を解決し、熱処理炉を
用いた熱処理工程において、周辺の空気が炉芯管内へ侵
入することを防止して、熱処理を均一に行うとともに、
炉芯管や熱処理ウェーハの汚染を低減することのできる
熱処理装置を提供することにある。An object of the present invention is to solve the above-mentioned conventional problems, prevent surrounding air from entering the furnace core tube in a heat treatment process using a heat treatment furnace, and perform heat treatment uniformly.
An object of the present invention is to provide a heat treatment apparatus that can reduce contamination of a furnace core tube and heat-treated wafers.
本発明者は、炉芯管内への空気Ｇ、侵入について詳細に
検討した結果以下のような新規な４卸見を得た。（１）
空気は炉口に蓋がない状態では炉芯管中央部まで希釈さ
れることなく侵入する。（２）炉口に蓋を設けることに
より、侵入空気の濃度を低下し、侵入深さは浅くなる。The inventor of the present invention conducted a detailed study on air G and its intrusion into the furnace core tube, and as a result, the following four new findings were obtained. (1)
When there is no lid at the furnace mouth, air enters the center of the furnace tube without being diluted. (2) By providing a lid at the furnace mouth, the concentration of invading air is reduced and the intrusion depth becomes shallow.
従って、炉芯管内への空気侵入低減対策として炉口に蓋
を設けることが極めて有効である。一方、上記のように
、ソフトランディング機構を備えた電気炉では、炉口に
蓋をすることができなかった。そこで、特にソフトラン
ディング機構を備えた炉芯管内への空気侵入対策を検討
した結果、フォーク自体の炉口蓋の機能をもたせればよ
いことを見出した。Therefore, it is extremely effective to provide a lid at the furnace mouth as a measure to reduce air intrusion into the furnace core tube. On the other hand, as mentioned above, in an electric furnace equipped with a soft landing mechanism, it is not possible to cover the furnace mouth. Therefore, as a result of considering countermeasures against air intrusion into the furnace core tube equipped with a soft landing mechanism, it was discovered that it would be sufficient to make the fork itself function as the furnace mouth cover.
実施例
本発明の一実施例を第２図により説明する。第２図に示
したように外径１２ｃｍのフォーク４において、サセプ
タ２をセットする部分の前後にフォークと同径で長さ２
０１の石英製筒９，１ｏを設けた。筒は両端を閉じ、空
気抜き用に５ｍφの穴１１．１２を開けである。また、
筒１０に関しては、フォークを引き出した状態でも炉芯
管内に留め炉口蓋となるようにフォークの動作範囲を調
整しである。Embodiment An embodiment of the present invention will be explained with reference to FIG. As shown in Fig. 2, in the fork 4 with an outer diameter of 12 cm, there is a length 2 with the same diameter as the fork, in front and behind the part where the susceptor 2 is set.
01 quartz tubes 9 and 1o were provided. The tube was closed at both ends, and holes 11 and 12 with a diameter of 5 m were opened for air venting. Also,
Regarding the cylinder 10, the operating range of the fork is adjusted so that even when the fork is pulled out, it remains within the furnace core tube and serves as the furnace mouth cover.
上記フォークを備えたソフトランディング機構付きの電
気炉を用いて１０００℃、１０分の酸化を行ったところ
、酸化膜厚の不均一性を±３％以下とすることができた
。When oxidation was carried out at 1000° C. for 10 minutes using an electric furnace equipped with the above fork and a soft landing mechanism, the non-uniformity of the oxide film thickness could be reduced to ±3% or less.
なお、筒の部分をフォークと一体構造としても効果はか
ｂらない。また、筒１０の代りに板又はウェーハを用い
ても同様の効果がある。Note that even if the cylinder part is integrated with the fork, the effect will not be the same. Further, the same effect can be obtained by using a plate or a wafer instead of the cylinder 10.
以上の実施例はラフ１〜ランデイング機構を備えた電気
炉について行ったが、第３図に示すようにソフトランデ
ィング機構を備えていない電気炉で、フォークが炉芯管
と接触する場合でも本発明の効果はかわらなかった。な
お、第３図において記号１３．１４はそれぞれ治具台お
よび引出し棒を示す。Although the above embodiments were carried out for an electric furnace equipped with a rough 1 to landing mechanism, the present invention can also be applied to an electric furnace without a soft landing mechanism, as shown in FIG. The effect was unchanged. In addition, in FIG. 3, symbols 13 and 14 indicate a jig stand and a pull-out rod, respectively.
以上の実施例で示したように、本発明はウェーハを支持
するフォークにふたの機能を持たせることにより、ソフ
トランディング機構を備えた電気炉を用いた場合も、酸
化した酸化膜厚のウェーハ内分布の均一性を向上させる
効果がある。As shown in the above embodiments, the present invention provides a fork that supports the wafer with a lid function, so that even when an electric furnace equipped with a soft landing mechanism is used, the wafer with an oxidized oxide film thickness can be This has the effect of improving the uniformity of distribution.
本発明によれば、炉口から炉芯管内への空気の侵入を低
減できるので、
（１）炉芯管内の酸素濃度の減少に伴ない、薄い酸化膜
を均一性よく形成できる、
（２）熱アニールにおける酸素濃度低減によるウェーハ
の酸化が低減される、
（３）炉周辺における塵埃や汚染が炉芯管内に侵入する
量を低減できる、
（４）炉周辺における環境（湿度等）の変化による熱処
理特性の変動を小さくできる、
などの効果がある。According to the present invention, since the intrusion of air from the furnace mouth into the furnace core tube can be reduced, (1) a thin oxide film can be formed with good uniformity as the oxygen concentration in the furnace core tube decreases; (2) Wafer oxidation is reduced due to the reduction in oxygen concentration during thermal annealing. (3) The amount of dust and contamination around the furnace that enters the furnace core tube is reduced. (4) Due to changes in the environment (humidity, etc.) around the furnace. This has the effect of reducing fluctuations in heat treatment characteristics.
第１図は従来のソフトランディング機構を有する電気炉
を説明するための断面図、第２図および第３図はそれぞ
れ本発明の異なる実施例を示す図である。
ｌ・・・ウェーハ、２・・・ソセプタ、３・・・フォー
ク架台、４・・・フォーク、５・・・フォーク搬送機構
６・・・ヒータ、７・・・均熱管、８・・・炉芯管、９
，１０・・・空気侵入対策用筒、１１，１２・・・空気
抜き用穴。FIG. 1 is a sectional view for explaining an electric furnace having a conventional soft landing mechanism, and FIGS. 2 and 3 are views showing different embodiments of the present invention, respectively. l... Wafer, 2... Soceptor, 3... Fork frame, 4... Fork, 5... Fork transport mechanism 6... Heater, 7... Soaking tube, 8... Furnace Core tube, 9
, 10... Cylinder for preventing air intrusion, 11, 12... Air vent hole.
Claims (1)
気が炉芯管内へ侵入することを防止することを特徴とす
る熱処理装置。(2) A heat treatment apparatus characterized in that a lid is always provided at the mouth of the furnace core tube to prevent surrounding air from entering the furnace core tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59049062A JPH0646624B2 (en) | 1984-03-16 | 1984-03-16 | Heat treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59049062A JPH0646624B2 (en) | 1984-03-16 | 1984-03-16 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60194527A true JPS60194527A (en) | 1985-10-03 |
| JPH0646624B2 JPH0646624B2 (en) | 1994-06-15 |
Family
ID=12820592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59049062A Expired - Lifetime JPH0646624B2 (en) | 1984-03-16 | 1984-03-16 | Heat treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0646624B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63257220A (en) * | 1987-04-15 | 1988-10-25 | Hitachi Ltd | Vertical treatment apparatus |
| JPH03297132A (en) * | 1990-04-16 | 1991-12-27 | Nec Corp | Heat treatment furnace of semiconductor wafer |
| JP2010141100A (en) * | 2008-12-11 | 2010-06-24 | Shin-Etsu Chemical Co Ltd | Diffusion furnace device and diffusion method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5939020A (en) * | 1982-08-27 | 1984-03-03 | Hitachi Ltd | Heat-treating apparatus |
-
1984
- 1984-03-16 JP JP59049062A patent/JPH0646624B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5939020A (en) * | 1982-08-27 | 1984-03-03 | Hitachi Ltd | Heat-treating apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63257220A (en) * | 1987-04-15 | 1988-10-25 | Hitachi Ltd | Vertical treatment apparatus |
| JPH03297132A (en) * | 1990-04-16 | 1991-12-27 | Nec Corp | Heat treatment furnace of semiconductor wafer |
| JP2010141100A (en) * | 2008-12-11 | 2010-06-24 | Shin-Etsu Chemical Co Ltd | Diffusion furnace device and diffusion method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0646624B2 (en) | 1994-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5279973A (en) | Rapid thermal annealing for semiconductor substrate by using incoherent light | |
| JPH0232535A (en) | Manufacture of silicon substrate for semiconductor device | |
| JPS60194527A (en) | Heat treating device | |
| JPH08148552A (en) | Semiconductor thermal treatment jig and its surface treatment method | |
| US6593253B1 (en) | Method of manufacturing semiconductor device | |
| JPH11135511A (en) | Silicon semiconductor substrate and manufacture thereof | |
| JPH07111871B2 (en) | Shadow mask manufacturing method | |
| JPS60194528A (en) | Heat treating device | |
| KR100310461B1 (en) | Method for forming silicon oxide | |
| US3948696A (en) | Method of diffusion into semiconductor wafers | |
| GB964707A (en) | Method of producing a cube-on-face texture in silicon and/or aluminium-containing iron alloy sheet or strip | |
| JPS5918673Y2 (en) | Heat treatment furnace for semiconductor devices | |
| JP3462368B2 (en) | Apparatus and method for manufacturing semiconductor device | |
| JPS59168642A (en) | Oxidizing device for semiconductor substrate | |
| JPH1027795A (en) | Manufacturing method of semiconductor device | |
| JP2693465B2 (en) | Semiconductor wafer processing equipment | |
| JPH0645268A (en) | Heat treating furnace | |
| JPS60233828A (en) | Treatment device | |
| JPS62185313A (en) | Diffusion furnace device | |
| JPS6132419A (en) | Method for annealing by infrared rays | |
| JPH06333866A (en) | Reaction tube for semiconductor manufacturing device | |
| JPH09278599A (en) | Heat treatment of gallium arsenic single crystal having semi-insulating property | |
| JPH04188616A (en) | Diffusion furnace device for heat treatment | |
| JPH05152309A (en) | Heat treatment method for semiconductor substrate | |
| JPS59155135A (en) | Formation of film and device thereof |