JPS57141958A - Manufacture of lateral type transistor - Google Patents

Manufacture of lateral type transistor

Info

Publication number
JPS57141958A
JPS57141958A JP2696481A JP2696481A JPS57141958A JP S57141958 A JPS57141958 A JP S57141958A JP 2696481 A JP2696481 A JP 2696481A JP 2696481 A JP2696481 A JP 2696481A JP S57141958 A JPS57141958 A JP S57141958A
Authority
JP
Japan
Prior art keywords
substrate
type transistor
lateral type
temperature
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2696481A
Other languages
Japanese (ja)
Other versions
JPH0116019B2 (en
Inventor
Kazuo Hagimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2696481A priority Critical patent/JPS57141958A/en
Publication of JPS57141958A publication Critical patent/JPS57141958A/en
Publication of JPH0116019B2 publication Critical patent/JPH0116019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To contrive the improvement of current amplification factor of the lateral type transistor by a method wherein, after completion of heat treatment at the temperature of 1,000 deg.C or above, a substrate is treated at the temperature range of 750-900 deg.C for two hours or more in O2 or N2. CONSTITUTION:A thermal oxide film 2 is provided on an N type Si substrate 1, apertures 3C and 3E are provided, and a P layer 4 is formed by performing B diffusion. While these procedures are performed, the N type substrate 1 is heat- treated at the temperature of 1,000 deg.C or above, a distortion is generated on the substrate, and the life of minority carrier is reduced. Subsequently, the above is processed in O2 or N2 at the temperature range of 750-900 deg.C for two hours, an aperture 5 is provided, an electrode 6 is attached, and the lateral type transistor is completed. According to this constitution, the current amplifying factor is improved by adding a very simple process, and the variation of amplification is reduced, thereby enabling to contrive stabilization of current amplification.
JP2696481A 1981-02-27 1981-02-27 Manufacture of lateral type transistor Granted JPS57141958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2696481A JPS57141958A (en) 1981-02-27 1981-02-27 Manufacture of lateral type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2696481A JPS57141958A (en) 1981-02-27 1981-02-27 Manufacture of lateral type transistor

Publications (2)

Publication Number Publication Date
JPS57141958A true JPS57141958A (en) 1982-09-02
JPH0116019B2 JPH0116019B2 (en) 1989-03-22

Family

ID=12207834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2696481A Granted JPS57141958A (en) 1981-02-27 1981-02-27 Manufacture of lateral type transistor

Country Status (1)

Country Link
JP (1) JPS57141958A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817668A (en) * 1981-07-23 1983-02-01 Nippon Denso Co Ltd Manufacture of semiconductor device
JPH02271708A (en) * 1989-04-13 1990-11-06 Kansai Electric Power Co Inc:The Pulse generating device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841668A (en) * 1971-09-27 1973-06-18
JPS52115189A (en) * 1976-03-23 1977-09-27 Sony Corp Production of semiconductor device
JPS5617062A (en) * 1979-07-20 1981-02-18 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841668A (en) * 1971-09-27 1973-06-18
JPS52115189A (en) * 1976-03-23 1977-09-27 Sony Corp Production of semiconductor device
JPS5617062A (en) * 1979-07-20 1981-02-18 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817668A (en) * 1981-07-23 1983-02-01 Nippon Denso Co Ltd Manufacture of semiconductor device
JPH0420257B2 (en) * 1981-07-23 1992-04-02 Nippon Denso Co
JPH02271708A (en) * 1989-04-13 1990-11-06 Kansai Electric Power Co Inc:The Pulse generating device

Also Published As

Publication number Publication date
JPH0116019B2 (en) 1989-03-22

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