JPS5771807A - Forming method of nitrided film - Google Patents

Forming method of nitrided film

Info

Publication number
JPS5771807A
JPS5771807A JP14520380A JP14520380A JPS5771807A JP S5771807 A JPS5771807 A JP S5771807A JP 14520380 A JP14520380 A JP 14520380A JP 14520380 A JP14520380 A JP 14520380A JP S5771807 A JPS5771807 A JP S5771807A
Authority
JP
Japan
Prior art keywords
compound
gas
nitrided film
tube
silicon compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14520380A
Other languages
Japanese (ja)
Inventor
Yasuaki Hokari
Toshio Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14520380A priority Critical patent/JPS5771807A/en
Publication of JPS5771807A publication Critical patent/JPS5771807A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To form a nitrided film of good quality having improved electrical characteristics, by heat-treating a silicon compound in an atmosphere of a nitrogenous compound in a plasmatic state.
CONSTITUTION: A silicon compound 5 e.g. crystalline or amorphous SiO2, platinum silicide or molybdenum silicide, mounted on a boat 4 is inserted in an oven (reactor) core tube 1 having a gas introductory port 11 on one end and an oven (reactor) core tube door 2 having a vacuum discharge port 21, on the other end and the interior of the tube 1 is then evacuated through the discharge port 21. A gas 3 containing a gas of a nitrogenous compound, e.g. ammonia, or a vapor of a gasified liquid or solid nitrogen compound is introduced through the introductory port 11 into the tube 1 and keep the interior thereof at a vacuum degree of 1W10 Torr. A heating element 6 is then heated, and a high-frequency voltage is applied to electrodes 7 to generate a plasma, heat-treat the silicon compound 5 at 1,000W1,150°C and form a nitrided film on the surface thereof.
COPYRIGHT: (C)1982,JPO&Japio
JP14520380A 1980-10-17 1980-10-17 Forming method of nitrided film Pending JPS5771807A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14520380A JPS5771807A (en) 1980-10-17 1980-10-17 Forming method of nitrided film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14520380A JPS5771807A (en) 1980-10-17 1980-10-17 Forming method of nitrided film

Publications (1)

Publication Number Publication Date
JPS5771807A true JPS5771807A (en) 1982-05-04

Family

ID=15379783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14520380A Pending JPS5771807A (en) 1980-10-17 1980-10-17 Forming method of nitrided film

Country Status (1)

Country Link
JP (1) JPS5771807A (en)

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