JPS6457716A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6457716A JPS6457716A JP62214210A JP21421087A JPS6457716A JP S6457716 A JPS6457716 A JP S6457716A JP 62214210 A JP62214210 A JP 62214210A JP 21421087 A JP21421087 A JP 21421087A JP S6457716 A JPS6457716 A JP S6457716A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- window
- layer
- ions
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To miniaturize a CMOS by a method wherein a substrate, to which ions are implanted, is coated with a polycrystalline silicon layer, a window is bored only in a region requiring activation, the window is irradiated with beams having a wavelength shorter than the fundamental absorption end of silicon, and the region is heated and activated. CONSTITUTION:Inter-element isolation layers 3 composed of SiO2 and insulating layers 4 are formed onto an Si substrate 7. Ions are implanted, activation treatment is conducted and a diffusion layer is shaped previously in a diffusion layer 8 and ions are implanted beforehand in a diffusion layer 9 at that time. A poly Si layer is formed through a chemical vapor growth method using silane and hydrogen as a reaction gas, a window is bored to the section of the diffusion layer 9 through dry etching employing carbon tetrafluoride (CF4) and oxygen (O2) as an etchant, and the window is irradiated by an arc lamp in an N2 atmosphere, thus heating and activating the diffusion layer 9. The diffusion layer 9 is activated completely, and a poly Si layer 10 is removed through dry etching using CF4 and O2 as an etchant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62214210A JPS6457716A (en) | 1987-08-28 | 1987-08-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62214210A JPS6457716A (en) | 1987-08-28 | 1987-08-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6457716A true JPS6457716A (en) | 1989-03-06 |
Family
ID=16652054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62214210A Pending JPS6457716A (en) | 1987-08-28 | 1987-08-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6457716A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0481125A2 (en) * | 1990-01-18 | 1992-04-22 | BRANSON ULTRASCHALL Niederlassung der EMERSON TECHNOLOGIES GmbH & CO. | Device for adjusting a machine parameter in friction welding |
US5588323A (en) * | 1995-05-22 | 1996-12-31 | U.S. Industrial Tool And Supply | Hand-held rivet bucking tool using energy dissipative polymer |
JP2008182253A (en) * | 2008-02-15 | 2008-08-07 | Rohm Co Ltd | Method for manufacturing semiconductor device |
-
1987
- 1987-08-28 JP JP62214210A patent/JPS6457716A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0481125A2 (en) * | 1990-01-18 | 1992-04-22 | BRANSON ULTRASCHALL Niederlassung der EMERSON TECHNOLOGIES GmbH & CO. | Device for adjusting a machine parameter in friction welding |
EP0481125A3 (en) * | 1990-01-18 | 1993-08-18 | Branson Ultraschall Niederlassung Der Emerson Technologies Gmbh & Co. | Device for adjusting a machine parameter in friction welding |
US5588323A (en) * | 1995-05-22 | 1996-12-31 | U.S. Industrial Tool And Supply | Hand-held rivet bucking tool using energy dissipative polymer |
JP2008182253A (en) * | 2008-02-15 | 2008-08-07 | Rohm Co Ltd | Method for manufacturing semiconductor device |
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