JPS6432678A - Thin-film transistor - Google Patents
Thin-film transistorInfo
- Publication number
- JPS6432678A JPS6432678A JP18954987A JP18954987A JPS6432678A JP S6432678 A JPS6432678 A JP S6432678A JP 18954987 A JP18954987 A JP 18954987A JP 18954987 A JP18954987 A JP 18954987A JP S6432678 A JPS6432678 A JP S6432678A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- sinxhy
- inter
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910004294 SiNxHy Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000011229 interlayer Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To prevent the generation of Al disconnection, peeling and cracks, and to execute hydrogen treatment efficiently by using both an SiO2 film and an SiNxHy film as inter-layer insulating films. CONSTITUTION:A poly Si layer 2, a gate insulating film 3 and a gate electrode 4 are formed onto an insulating substrate 1, and a source-drain diffusion layer 2-a is shaped. An SiNxHy film 5-a and an SiO2 film 5-b as inter-layer insulating films are formed onto the layer 2-a. The SiO2 film is employed as the excellent inter-layer insulating film because it has step covering properties better than SiNxHy and also has small film stress, but it is preferable that a PSG film is used and the film is made to reflow after the film is shaped. When the SiNxHy film is formed through a CVD method using high-frequency plasma and ECR, the film containing hydrogen of 10<-3>-30% can be formed by controlling a reaction temperature and a gas ratio.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18954987A JPS6432678A (en) | 1987-07-28 | 1987-07-28 | Thin-film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18954987A JPS6432678A (en) | 1987-07-28 | 1987-07-28 | Thin-film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432678A true JPS6432678A (en) | 1989-02-02 |
Family
ID=16243178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18954987A Pending JPS6432678A (en) | 1987-07-28 | 1987-07-28 | Thin-film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432678A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043512A (en) * | 1996-09-06 | 2000-03-28 | Sharp Kaubushiki Kaisha | Thin film semiconductor device and method for producing the same |
| US6396078B1 (en) * | 1995-06-20 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| US6548828B2 (en) | 1997-09-30 | 2003-04-15 | Sanyo Electric Co., Ltd. | Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or less |
| US6555419B2 (en) | 1997-10-03 | 2003-04-29 | Sanyo Electric Co., Ltd. | Thin film transistor and manufacturing method of thin film transistor |
| US6613618B1 (en) | 1997-09-30 | 2003-09-02 | Sanyo Electric Co., Ltd. | Thin-film transistor and method of producing the same |
| JP2005026712A (en) * | 2004-09-17 | 2005-01-27 | Semiconductor Energy Lab Co Ltd | Thin film integrated circuit and active type liquid crystal display device |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US7550398B2 (en) * | 2004-03-30 | 2009-06-23 | Eudyna Devices, Inc. | Semiconductor device and method of fabricating the same |
| US8889288B2 (en) | 2006-12-11 | 2014-11-18 | Lg Chem, Ltd. | Lithium ion battery of crimping shape of increased safety |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136259A (en) * | 1983-12-24 | 1985-07-19 | Sony Corp | Manufacture of fet |
-
1987
- 1987-07-28 JP JP18954987A patent/JPS6432678A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136259A (en) * | 1983-12-24 | 1985-07-19 | Sony Corp | Manufacture of fet |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US6396078B1 (en) * | 1995-06-20 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| US6593235B2 (en) | 1995-06-20 | 2003-07-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US7838968B2 (en) | 1996-04-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US6043512A (en) * | 1996-09-06 | 2000-03-28 | Sharp Kaubushiki Kaisha | Thin film semiconductor device and method for producing the same |
| US6548828B2 (en) | 1997-09-30 | 2003-04-15 | Sanyo Electric Co., Ltd. | Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or less |
| US6613618B1 (en) | 1997-09-30 | 2003-09-02 | Sanyo Electric Co., Ltd. | Thin-film transistor and method of producing the same |
| KR100544919B1 (en) * | 1997-09-30 | 2006-04-21 | 산요덴키가부시키가이샤 | Thin film transistor and method of manufacturing the same |
| US6555419B2 (en) | 1997-10-03 | 2003-04-29 | Sanyo Electric Co., Ltd. | Thin film transistor and manufacturing method of thin film transistor |
| US6867075B2 (en) | 1997-10-03 | 2005-03-15 | Sanyo Electric Co | Manufacturing method of thin film transistor in which a total film thickness of silicon oxide films is defined |
| US7550398B2 (en) * | 2004-03-30 | 2009-06-23 | Eudyna Devices, Inc. | Semiconductor device and method of fabricating the same |
| JP2005026712A (en) * | 2004-09-17 | 2005-01-27 | Semiconductor Energy Lab Co Ltd | Thin film integrated circuit and active type liquid crystal display device |
| US8889288B2 (en) | 2006-12-11 | 2014-11-18 | Lg Chem, Ltd. | Lithium ion battery of crimping shape of increased safety |
| US9130203B2 (en) | 2006-12-11 | 2015-09-08 | Lg Chem, Ltd. | Lithium ion battery of crimping shape of increased safety |
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