JPS64766A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS64766A JPS64766A JP6916988A JP6916988A JPS64766A JP S64766 A JPS64766 A JP S64766A JP 6916988 A JP6916988 A JP 6916988A JP 6916988 A JP6916988 A JP 6916988A JP S64766 A JPS64766 A JP S64766A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- fluorine
- gas
- concentration
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thin Film Transistor (AREA)
Abstract
PURPOSE: To provide sufficient electric characteristics and adhesion, by providing a semiconductor layer comprising polycrystalline silicon on a substrate, including hydrogen and fluorine in the vicinity of the grain boundary of the polycrystalline silicon, and distributing either of the concentration of the hydrogen or the concentration of the fluorine in the direction of the thickness of the semiconductor layer.
CONSTITUTION: Hydrogen and fluorine are included in a semiconductor at the same time. The concentration of the hydrogen is distributed in the direction of a layer. As the method for including the hydrogen and the fluorine in the vicinity of the grain boundary of a polycrystalline thin film, heat treatment is performed in a plasma atmosphere of a gas, whose main component is the hydrogen or the fluorine, after the formation of the polycrystalline silicon thin film. Namely, plasma is yielded at substrate temperature of 100∼500°C, gas pressure of 10-5Torr∼10Torr, high frequency power of 10-3∼10-2W/m2 and high frequency of 5∼50GHz. At this time, the hydrogen and the fluorine are mainly used as the gas. Inactive gas such as Ar, He, Ne and the like can be added.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6916988A JPS64766A (en) | 1987-03-23 | 1988-03-23 | Semiconductor device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-68305 | 1987-03-23 | ||
| JP6830587 | 1987-03-23 | ||
| JP62-69776 | 1987-03-24 | ||
| JP6916988A JPS64766A (en) | 1987-03-23 | 1988-03-23 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01766A JPH01766A (en) | 1989-01-05 |
| JPS64766A true JPS64766A (en) | 1989-01-05 |
Family
ID=26409522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6916988A Pending JPS64766A (en) | 1987-03-23 | 1988-03-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS64766A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4992839A (en) * | 1987-03-23 | 1991-02-12 | Canon Kabushiki Kaisha | Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same |
| US7946592B2 (en) | 2004-11-02 | 2011-05-24 | Komatsu Corporation | Bearing seal |
| JP2012019146A (en) * | 2010-07-09 | 2012-01-26 | Sony Corp | Imaging device, display image device and electronic equipment |
-
1988
- 1988-03-23 JP JP6916988A patent/JPS64766A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4992839A (en) * | 1987-03-23 | 1991-02-12 | Canon Kabushiki Kaisha | Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same |
| US7946592B2 (en) | 2004-11-02 | 2011-05-24 | Komatsu Corporation | Bearing seal |
| JP2012019146A (en) * | 2010-07-09 | 2012-01-26 | Sony Corp | Imaging device, display image device and electronic equipment |
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