JP2000286248A - Method for processing residue of implanted photoresist ions - Google Patents

Abstract

PROBLEM TO BE SOLVED: To aim at ashing removal with high efficiency without leaving behind residues of an organic matter degenerated by a method, wherein residues containing a dopant are removed at higher temperatures than those at ashing removal of a photoresist in which the dopant is injected. SOLUTION: A photoresist, in which a dopant is injected, is subjected to ashing removal by use of gas plasma which does not contain fluorine, thereby exposing a surface of a body to be processed (S1). Thereafter, residues containing the dopant left behind on a surface of the body to be processed are removed. The residues containing the dopant are removed by used of a gas containing fluorine and/or hydrogen at higher temperatures than those at ashing removal of the photoresist (S2). As a result, a highly pure body to be processed surface can be obtained. By setting the temperature in step S1 is set lower than 120 deg.C, popping is restricted, so that the temperatures at step S2 are increased to 200 deg.C or higher. Thus, removal efficiency of a dopant oxide can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device and the like, and a processing method for removing a photoresist and a residue thereof on a substrate used for the method. The present invention relates to a chemical treatment and a treatment method for removing residues.

[0002]

2. Description of the Related Art In a process of manufacturing a semiconductor device, a photoresist, which is a photosensitive resin, is widely used as a mask material for selective etching and local ion implantation for forming a device structure. It is necessary that the photoresist is removed after various processes utilizing the same. In recent years, generally, the photoresist is generally oxidized and ashed by a dry process using an oxidizing action, mainly using oxygen plasma, oxygen radicals, ozone, and the like. You.

[0003] That is, as a method of removing a photoresist which is an organic substance mainly composed of carbon and hydrogen, the photoresist is exposed to oxygen activated by electric discharge or ultraviolet irradiation, and water vapor, carbon dioxide or carbon dioxide is oxidized by the oxidation. A technique of removing ashing by converting it into a gas such as carbon oxide is widely used.

On the other hand, when a photoresist is used as a mask for ion implantation of a dopant or the like, the surface of the resist is deteriorated by the energy of the implanted ions, making it difficult to remove by oxidation, and significantly lowering the processing efficiency. In addition, when the ion-implanted photoresist is heated to a normal ashing temperature of 150 to 250 ° C., the altered layer on the surface is ruptured by the vapor of the organic solvent generated from the unaltered layer under the photoresist, and the flake-like shape is formed. It is known that a phenomenon of scattering as particles (popping) is observed and consequently the wafer is contaminated. Further injected As,
Since dopant ions such as P and B do not generate a substance having a high vapor pressure by oxidation, oxides of the ions remain on the wafer after the resist is ashed and removed by an oxygen-based active species, and the wet processing Need to be removed.

Conventionally, in order to remove the resist which is difficult to incinerate after the ion implantation as described above, the deteriorated layer on the resist surface has been removed by hydrogenating the dopant with hydrogen plasma or water vapor plasma together with the removal of the resist. Later, a method of ashing and removing the underlying unaltered layer by oxygen plasma or a method of increasing the ashing rate and adding a gas containing fluorine having a function of removing the implanted ion species to the oxygen gas by using a plasma of a mixed gas plasma. And the like have been proposed.

Japanese Patent Application Laid-Open No. Hei 5-275326 discloses that
A method of treating with oxygen and CF ₄ and then treating with oxygen and nitrogen is disclosed in JP-A-6-104.
No. 223 discloses a method of performing a process using oxygen and nitrogen and then performing a process using oxygen and SF ₄ . Further, JP-A-5-160022 discloses a method in which a photoresist is ashed with oxygen plasma and then the residue is ashed with hydrogen plasma.

[0007]

However, when the altered layer generated by ion implantation is removed by hydrogen plasma or water vapor plasma, the reaction rate is generally slow, so that the processing efficiency is reduced. Further, it is necessary to sufficiently raise the temperature of the object to be processed in order to supplement the reaction rate, and popping is more likely to occur.

[0008] As an example of a gas containing halogen, in a process using plasma in which a gas containing fluorine, which is a kind of halogen, is added to oxygen, the processing efficiency is higher than that of oxygen plasma alone due to the action of generated fluorine ions and fluorine radicals. Although low-temperature processing tends to generate photoresist residues, it is necessary to perform processing at a high temperature at which popping tends to occur to avoid this.

For this reason, in an actual semiconductor device manufacturing process, after ashing with oxygen, the oxide of the dopant remaining on the wafer to be processed is cleaned and removed by wet cleaning.

[0010]

SUMMARY OF THE INVENTION An object of the present invention is to provide a processing method capable of efficiently removing foreign substances on the surface of an object without leaving a residue such as an ion-implanted dopant oxide. It is in.

According to the present invention, after the photoresist into which the dopant is implanted is removed by ash to expose the surface of the object to be processed,
In a residue removing method for removing a residue containing the dopant remaining on the surface of the object to be processed, the residue containing the dopant is removed at a temperature higher than a temperature at the time of removing the photoresist by ashing. And

The present invention also provides a method for treating an object to be treated, wherein the step of ashing at a first temperature the photoresist on the surface of the object to which the dopant has been implanted, the first step comprising: Removing the residue containing the dopant at a second temperature higher than the temperature.

Further, the present invention provides a method of manufacturing a semiconductor device, comprising the steps of: forming a photoresist pattern on the surface of a substrate; implanting a dopant into the substrate using the photoresist pattern as a mask; Ashing and removing the photoresist on the surface of the substrate into which the dopant is implanted, and removing a residue containing the dopant at a second temperature higher than the first temperature. And

[0014]

FIG. 1 is a flow chart of a processing method according to the present invention, and FIG. 2 is a schematic cross-sectional view of an object for explaining the processing method.

Reference numeral 1 denotes an object to be processed such as a silicon wafer, 2 denotes a photoresist in which a dopant such as phosphorus, arsenic or boron is ion-implanted, and 3 denotes a dopant such as phosphorus oxide, arsenic oxide or boron oxide. It is a residue.

In step S1, the photoresist 2 into which the dopant has been implanted is ashed and removed to expose the surface of the workpiece 1.

Thereafter, in step S2, the residue 3 containing the dopant remaining on the surface of the object 1 is removed.

At this time, the residue 3 containing the dopant is removed at the temperature of step S1, that is, at a temperature T2 higher than the temperature T1 at the time of photoresist ash removal.

Thus, a highly clean surface of the object to be processed is obtained.

By reducing the temperature in step S1, popping is suppressed, and by increasing the temperature in step S2, the efficiency of removing the dopant oxide is increased.

The temperature of the object to be processed in step S1 is lower than 150 ° C., specifically 130 ° C. or lower, more preferably 120 ° C. or lower.

The temperature of the object to be processed in step S2 may be higher than the temperature of the object to be processed in step S1, but is more preferably 150 ° C. or higher, and more preferably 20 ° C.
0 ° C. or higher.

In step S1, an oxidizing gas (first gas) is used to ashing the photoresist.
In order not to damage the surface of the object to be processed, it is preferable to perform the incineration treatment using plasma of a gas containing no fluorine.
The gas containing no fluorine means a gas to which no fluorine-based gas is intentionally added, and may be a gas in which fluorine is detected as a so-called background level or contamination level. Step S1
Examples of the first gas used include oxygen gas having an oxygen concentration of 100%, and a mixed gas of oxygen gas and an inert gas (the oxygen concentration is arbitrary). As the inert gas, a rare gas such as helium, argon, neon, xenon, or krypton or a nitrogen gas is used. Further, if necessary, water, nitric oxide, or the like may be added.

The gas used in step S2 is a gas containing fluorine and / or hydrogen. More specifically, they are carbon fluoride, nitrogen fluoride, ammonia, sulfur fluoride, fluorine, hydrogen, and water, and may be used by being mixed with an oxygen gas or an inert gas as needed. Among them, carbon fluoride, nitrogen fluoride, sulfur fluoride and ammonia are preferred. Oxygen not only acts as a diluent gas, but also reacts with carbon and nitrogen generated from carbon fluoride, nitrogen fluoride, and ammonia to produce carbon dioxide and nitrogen oxide gas and treat residual carbon and nitrogen. It also has the effect of quickly removing it from space.

In the steps S1 and S2, it is preferable to perform a plasma treatment using microwave plasma of the first or second gas.

As the second gas, CF 2 is preferably used._Four , C
_Two F₆ , C_Three F₈ , C_Three F₆ , NF _Three , SF₆ , NH_Three 
And the like are preferably used. These are mixed with oxygen
May be. In the second step, phosphorus, arsenic, boron, etc.
Out of the photoresist that has been implanted
Mainly oxides remaining on the surface of the workpiece after the
To remove. Dopants such as phosphorus, arsenic, and boron
Fluorine ion, fluorine radical, hydrogen ion, hydrogen radical
These residues are volatile due to the action of active species such as calcium.
Is removed from the surface of the workpiece as fluoride or hydride
It is. Fluorocarbon gas and nitrogen fluoride gas are desirable
Do not have elements that cause unwanted contamination
And the efficiency of generation of fluorine active species is good.
Since the desired effect can be exhibited by adding
Less damage to Ammonia is also better than hydrogen
Easy handling and low NH bond energy
The ability to efficiently generate active hydrogen species
NH radicals have a long lifetime and
It is very effective because it can be reduced efficiently.

(Embodiment 1) FIG. 3 is a diagram showing a configuration of a plasma processing apparatus that generates plasma using microwaves and performs a plasma process on a wafer to be processed. 1
Numeral 01 denotes a vacuum chamber, which forms a processing chamber for generating plasma together with the dielectric window 107 for microwave introduction, and is evacuated through an exhaust port 102 by a vacuum pump (not shown). Reference numeral 108 denotes a microwave waveguide, which guides a microwave generated by a microwave generator (not shown) to the above-described vacuum vessel. Reference numeral 106 denotes a gas introduction pipe which supplies a plasma processing gas at a predetermined flow rate supplied from a gas supply system (not shown) to the processing chamber. In the figure, W denotes a wafer having a photoresist in which phosphorus (P) has been ion-implanted, and is mounted on the heater 105.

In the ashing apparatus shown in FIG. 3, a wafer as an object to be processed is placed above the heater set at the processing temperature while being lifted from the heater by a wafer elevating pin (not shown) or the like. After the chamber is evacuated to a substantially vacuum by a vacuum pump connected with the chamber airtight, the wafer is placed on the heater by operating the elevating pins. Thereby, the wafer temperature can be kept sufficiently lower than the heater temperature by the effect of vacuum insulation. In the actual measurement, the wafer temperature at this time was about 80 ° C.

For the purpose of removing the organic components constituting the resist, a predetermined amount of oxygen shown below is introduced into the chamber, the processing is started under predetermined conditions, and discrimination is made by an end point detecting device having a plasma monitor (not shown). The time until the end point of the ashing is measured, and the processing is ended after a time of about 1.5 to 2 times the elapsed time has elapsed from the start time.

Active species for incineration can be produced with high efficiency by not only the apparatus shown in FIG. 3 but also a microwave plasma processing apparatus having a slotted conductor flat plate. Higher efficiency can be obtained by using a flat plate antenna in which the H-plane of the endless annular waveguide is planar and a plurality of slots are formed therein, or a microwave plasma processing apparatus using a radial line slot antenna.

Such a device is disclosed in Japanese Patent No. 2925535.
And US Pat. No. 5,034,086.

The first step is as follows when the processing conditions are summarized. Gas / flow: O _2/1000 sccm process pressure: 1 Torr (about 133 Pa) Heating Temperature: 250 ° C. wafer temperature: 80 ° C.

In this way, the photoresist 9 on the wafer
5% or more is completely removed, so that it cannot be visually observed.

Next, the vacuum insulation is broken, and oxygen is introduced into the chamber until the pressure becomes approximately atmospheric pressure in order to heat the wafer to the heater temperature. The gas to be introduced may be a gas other than oxygen.

Next, after the inside of the chamber is evacuated again, the second step S2 is performed. Here, for the purpose of removing the residue remaining on the wafer, which cannot be removed only by oxygen, an oxygen / CF ₄ mixed gas mixed at a predetermined concentration is introduced into a predetermined amount chamber, and processing is started under predetermined conditions. , 1
Perform processing for about 5 seconds. By performing this treatment, the residue made of the oxide of the dopant remaining in the first-stage treatment is removed.

The processing conditions in the second step are, for example, as follows. Gas / flow _{rate: O 2 + CF 4 / 500sccm} + 2
sccm Processing pressure: 0.6 Torr (about 80 Pa) Wafer temperature: 250 ° C. Microwave output: 1500 W Processing time: about 15 seconds

(Embodiment 2) A wafer to be processed is placed on a heater set at a processing temperature (low temperature) in the ashing apparatus shown in FIG. 3, and after the wafer reaches the processing temperature, the chamber is removed. The inside of the chamber is evacuated to a substantially vacuum by a vacuum pump connected in an airtight manner.

For the purpose of removing the organic components constituting the resist, a predetermined amount of oxygen is introduced into the chamber, the processing is started under predetermined conditions, and the time until the end point of the ashing determined by the end point detection device of the plasma monitor is measured. The processing is performed for about twice as long.

The processing conditions in the first step are as follows. Gas / flow: O _2/100 sccm process pressure: 0.1 Torr (about 13.3 Pa) treatment temperature: 80 ° C. Microwave output: 1500 W Treatment time: emission spectra or emission intensity until changed time 1.5-2 About twice as long

Thereafter, the chamber is opened to the atmosphere and the wafer is taken out. The photoresist on the wafer is visually removed so that it cannot be observed.

The wafer to be processed is placed on the heater set at the processing temperature (high temperature) in the ashing apparatus shown in FIG. 3, and after the wafer reaches the processing temperature, the chamber is airtightly connected. The inside of the chamber is evacuated to a substantially vacuum by the vacuum pump. At this time, the processing may be performed in another chamber, or the processing may be performed by changing the set temperature of the same chamber.

For the purpose of removing the residue when the organic component in the resist is removed in the first step, a predetermined amount of oxygen / CF ₄ mixed gas mixed at a predetermined concentration is introduced into a chamber under a predetermined condition. To start the process and perform the process for about 15 seconds. By performing this treatment, the residue composed of the oxide of the dopant can be removed, and a clean surface without the residue can be obtained.

The processing conditions in the second step are as follows. Gas / flow rate: O ₂ + CF ₄ / 500sccm + 2s
ccm Processing pressure: 0.6 Torr (about 80 Pa) Wafer temperature: 250 ° C. Microwave output: 1500 W

In this method, the processing temperature in the first step performed with the non-fluorine-based oxidizing gas is set to a temperature lower than that in the second step, that is, a temperature sufficiently lower than 150 ° C.
Popping was suppressed.

(Embodiment 3) The plasma processing apparatus of FIG. 4 is an apparatus in which lift pins 109 as a wafer elevating device are added to the apparatus of FIG.

A wafer to be processed is placed on the ashing apparatus shown in FIG. 4 in a state of being lifted above the heater by an elevating device, and the inside of the chamber is evacuated to almost vacuum by a vacuum pump connected with the chamber airtight. I do.

For the purpose of removing organic components constituting the resist, a predetermined amount of oxygen is introduced into the chamber, the processing is started under predetermined conditions, and the time until the end point of ashing determined by an end point detecting device of a plasma monitor or the like. The processing is about twice as long as.

The processing conditions of this first step are as follows. Gas / flow: O _2/100 sccm process pressure: 0.1 Torr (about 13.3P
a) Heater temperature: 250 ° C. Microwave output: 1500 W Processing time: 1.5 to 2 times the time until the emission spectrum or emission intensity changes

Although the heater temperature at this time is 250 ° C., the wafer temperature is sufficiently lower than 150 ° C. since the wafer itself is lifted from the heater by the lift pins.

As a result, 95% or more of the photoresist can be surely removed.

After the first step, the wafer is lowered by a wafer raising / lowering device, placed on a heater, and a gas such as oxygen is introduced into the chamber at substantially atmospheric pressure, thereby heating the wafer for a certain period of time. Is raised to about 250 °.

For the purpose of removing the residue after removing the organic components in the resist in the previous treatment, a predetermined amount of an oxygen / CF ₄ mixed gas mixed at a predetermined concentration is introduced into a chamber under a predetermined condition. Processing is started, and processing is performed for about 15 seconds. By performing this processing, the same processing as the processing of the second embodiment can be efficiently performed in a shorter time.

The processing conditions in the second step are as follows. Gas / flow rate: O ₂ + CF ₄ / 500sccm
+2 sccm Processing pressure: 0.6 Torr (about 80 Pa) Heater temperature (workpiece temperature): 250 ° C. Microwave output: 1500 W Processing time: about 15 seconds

Active species of fluorine generated when a gas containing fluorine is converted into plasma corrode silicon and silicon oxide constituting an object to be processed if the processing time is long. Further, if ashing is performed by adding a gas containing fluorine, the resist may be fluorinated and ashing may be difficult.

In the embodiment described above, there is no such problem.

[0056] Sulfur (S) irrelevant to the reaction system is not mixed, it is difficult to maintain the plasma, and the generation efficiency of the fluorine active species is not deteriorated.

(Embodiment 4) Next, a method of manufacturing a semiconductor device according to the present invention will be described with reference to FIG.

As the object 1 to be processed, a semiconductor substrate such as a Si wafer is prepared.

As shown in FIG. 5A, the surface of the object 1 is coated with a photoresist material 4.

As shown in FIG. 5B, the photoresist material is exposed and developed to obtain a photoresist pattern 2.

As shown in FIG. 5C, a dopant such as phosphorus, arsenic, or boron is implanted using the photoresist pattern 2 as a mask. A doped layer 5 is formed in a portion exposed from the photoresist pattern. Further, a dopant is introduced into the photoresist pattern.

The first process as described in the first to third embodiments is performed, and the photoresist pattern 2 is ashed and removed. As a result, the residue 3 made of the oxide of the dopant remains on the surface of the object 1 as shown in FIG.

Next, if the second step as described above is performed, the residue 3 is removed as shown in FIG. Thus, the doped layer 5 of the semiconductor device can be formed.

[0064]

EXAMPLE After the photoresist into which P ions had been implanted was ashed by the procedure described in the third embodiment, and the residue was removed, almost no residue of the dopant oxide remained.

[0065]

According to the present invention, it is possible to remove ash with high efficiency without leaving a residue of altered organic matter, to suppress corrosion of the surface of the object to be ashed, and to reduce particle contamination. The cause can be suppressed. Further, the conventional wet cleaning for removing the residue can be omitted.

[Brief description of the drawings]

FIG. 1 is a diagram showing a processing method of the present invention.

FIG. 2 is a diagram showing a state of processing according to the present invention.

FIG. 3 is a diagram showing an example of a plasma processing apparatus used in the present invention.

FIG. 4 is a diagram showing another example of the plasma processing apparatus used in the present invention.

FIG. 5 is a diagram showing a method for manufacturing a semiconductor device according to the present invention.

Claims (36)

[Claims] 1. A residue removing method for removing a residue containing the dopant remaining on the surface of the object after exposing the surface of the object by ashing and removing the photoresist into which the dopant has been implanted. And removing the residue containing the dopant at a temperature higher than the temperature at the time of removing the photoresist by ashing. 2. The method for removing residues according to claim 1, wherein the ash removal of the photoresist into which the dopant has been implanted is an ash treatment using plasma of a gas containing no fluorine. 3. The method for removing a residue according to claim 1, wherein the removal of the residue containing the dopant is a treatment using a gas containing fluorine and / or hydrogen. 4. The method for removing a residue according to claim 1, wherein the removal of the residue containing the dopant is a treatment using a gas containing oxygen, fluorine and / or hydrogen. 5. The ashing process of the photoresist in which the dopant is implanted is an ashing process using a plasma of a first gas not containing fluorine, and the removal of the residue containing the dopant is performed by removing fluorine and / or hydrogen. The method for removing a residue according to claim 1, wherein the treatment is a treatment using a second gas containing: 6. The ash removal of the photoresist in which the dopant is implanted is an ash treatment using a plasma of a first gas containing no fluorine, and the removal of the residue containing the dopant is performed by removing oxygen and fluorine. And / or hydrogen.
The method for removing a residue according to claim 1, wherein the treatment is a treatment using a gas. 7. The ash removal of the photoresist in which the dopant has been implanted is an ash treatment using oxygen plasma, and the removal of the residue containing the dopant is performed by using fluorocarbon,
The method for removing a residue according to claim 1, wherein the treatment is a treatment using a gas containing at least one of nitrogen fluoride, sulfur fluoride, and ammonia, and oxygen. 8. The method according to claim 1, wherein the dopant is at least one of phosphorus, arsenic, and boron. 9. The method of removing residues according to claim 1, wherein the ashing is a plasma processing method using microwave plasma. 10. The method according to claim 1, wherein the residue removing process is a plasma processing method using microwave plasma. 11. The method according to claim 9, wherein the microwave plasma radiates a microwave from a microwave antenna having a plurality of slots in a conductive flat plate to generate plasma. 12. The ashing process is performed in a state where the object is lifted from a heater, and the residue removal process is performed by bringing the object into contact with the heater. Method of removing residue. 13. A method for treating an object to be processed, wherein at a first temperature, a photoresist on a surface of the object to be processed into which a dopant has been implanted is ashed and removed, A process for removing the residue containing the dopant at a temperature of 2. 14. The method for treating an object to be treated according to claim 13, wherein the ashing removal step is an ashing treatment using a plasma of a gas containing no fluorine. 15. The method for treating an object to be treated according to claim 13, wherein the residue removing step is a treatment using a gas containing fluorine and / or hydrogen. 16. The method according to claim 13, wherein the step of removing the residue is a process using a gas containing oxygen, fluorine, and / or hydrogen. 17. The ashing removal step is an ashing treatment using a plasma of a first gas containing no fluorine, and the removing step of the residue uses a second gas containing fluorine and / or hydrogen. The method for processing an object to be processed according to claim 13, wherein the processing is performed. 18. The ashing removal step is an ashing treatment using a plasma of a first gas containing no fluorine, and removing the residue containing the dopant comprises removing oxygen, fluorine and / or hydrogen. 14. The method for processing an object to be processed according to claim 13, wherein the processing is performed using a second gas containing the second gas. 19. The incineration removing step is an incineration treatment using oxygen plasma, and the residue removing step includes at least one of carbon fluoride, nitrogen fluoride, sulfur fluoride and ammonia. 14. The method for treating an object to be treated according to claim 13, wherein the treatment is performed using a gas containing oxygen and oxygen. 20. The method according to claim 13, wherein the dopant is at least one of phosphorus, arsenic, and boron. 21. The method according to claim 13, wherein the ashing process is a plasma processing method using microwave plasma. 22. The method for processing an object to be processed according to claim 13, wherein the residue removal processing is a plasma processing method using microwave plasma. 23. The method according to claim 21, wherein the microwave plasma radiates a microwave from a microwave antenna having a plurality of slots in a conductive flat plate to generate plasma. 24. In the ashing process, the object is lifted from a heater, and in the residue removing process,
14. The method for treating an object according to claim 13, wherein the object is brought into contact with the heater. 25. A method of manufacturing a semiconductor device, comprising the steps of: forming a photoresist pattern on a surface of a substrate; implanting a dopant into the substrate using the photoresist pattern as a mask; Ashing the photoresist on which the dopant is implanted on the surface of the semiconductor device, and removing a residue containing the dopant at a second temperature higher than the first temperature. Manufacturing method. 26. The method of manufacturing a semiconductor device according to claim 25, wherein the ashing removal step is an ashing treatment using a plasma of a gas containing no fluorine. 27. The method of manufacturing a semiconductor device according to claim 25, wherein the step of removing the residue is a process using a gas containing fluorine and / or hydrogen. 28. The method of manufacturing a semiconductor device according to claim 25, wherein the step of removing the residue is a process using a gas containing oxygen, fluorine, and / or hydrogen. 29. The ashing process is an ashing process using plasma of a first gas containing no fluorine, and the removing process of the residue uses a second gas containing fluorine and / or hydrogen. 26. The method of manufacturing a semiconductor device according to claim 25, wherein the processing is performed. 30. The ashing removal step is an ashing treatment using plasma of a first gas containing no fluorine, and removing the residue containing the dopant comprises removing oxygen, fluorine and / or hydrogen. 26. The method of manufacturing a semiconductor device according to claim 25, wherein the process is a process using a second gas containing the second gas. 31. The ashing removal step is an ashing treatment using oxygen plasma, and the residue removing step includes at least one of carbon fluoride, nitrogen fluoride, sulfur fluoride and ammonia. 26. The method for manufacturing a semiconductor device according to claim 25, wherein the processing is performed using a gas containing oxygen and oxygen. 32. The method according to claim 25, wherein the dopant is at least one of phosphorus, arsenic, and boron. 33. The method of manufacturing a semiconductor device according to claim 25, wherein the ashing process is a plasma processing method using microwave plasma. 34. The method of manufacturing a semiconductor device according to claim 25, wherein the residue removal processing is a plasma processing method using microwave plasma. 35. The method of manufacturing a semiconductor device according to claim 33, wherein the microwave plasma radiates microwaves from a microwave antenna having a plurality of slots in a conductive flat plate to generate plasma. 36. In the ashing process, the object is lifted from a heater, and in the residue removing process,
The method for manufacturing a semiconductor device according to claim 25, wherein the object to be processed is brought into contact with the heater.