JPS6425434A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6425434A JPS6425434A JP18146487A JP18146487A JPS6425434A JP S6425434 A JPS6425434 A JP S6425434A JP 18146487 A JP18146487 A JP 18146487A JP 18146487 A JP18146487 A JP 18146487A JP S6425434 A JPS6425434 A JP S6425434A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- cvd
- cavity
- bpsg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To bury an insulating film in a flat structure having no cavity by correcting the film in a groove so as to have a smooth slope by a heat treatment. CONSTITUTION:After grooves are formed on a semiconductor substrate 1, a CVD SiO2 film is formed as a first insulating film 10 on a whole surface. Further, a BPSG film is formed by a CVD method as a second insulating film 22 on the upper face. When it is heat treated at 850-900 deg.C in O2 or N2 atmospheric gas for 5-30min, the BPSG film is softened, and second insulating film 12 smoothed in its surface shape is obtained. Further, a CVD SiO2 film is formed as a third insulating film 13 on the upper surface. In this case, since the base surface is smooth, the CVD SiO2 film is formed without cavity. Then, a first photoresist film 4 and a second photoresist film 5 are formed, and etched back to obtain a shape shown in Figure (e).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18146487A JPS6425434A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18146487A JPS6425434A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425434A true JPS6425434A (en) | 1989-01-27 |
Family
ID=16101213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18146487A Pending JPS6425434A (en) | 1987-07-21 | 1987-07-21 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425434A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02304947A (en) * | 1989-05-05 | 1990-12-18 | American Teleph & Telegr Co <Att> | Manufacture of semicowductor device |
KR20010058498A (en) * | 1999-12-30 | 2001-07-06 | 박종섭 | Method of forming trench type isolation layer in semiconductor device |
KR100384877B1 (en) * | 1999-06-28 | 2003-05-22 | 주식회사 하이닉스반도체 | A method for coating photoresist |
-
1987
- 1987-07-21 JP JP18146487A patent/JPS6425434A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02304947A (en) * | 1989-05-05 | 1990-12-18 | American Teleph & Telegr Co <Att> | Manufacture of semicowductor device |
KR100384877B1 (en) * | 1999-06-28 | 2003-05-22 | 주식회사 하이닉스반도체 | A method for coating photoresist |
KR20010058498A (en) * | 1999-12-30 | 2001-07-06 | 박종섭 | Method of forming trench type isolation layer in semiconductor device |
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