JPS6418242A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6418242A
JPS6418242A JP17379287A JP17379287A JPS6418242A JP S6418242 A JPS6418242 A JP S6418242A JP 17379287 A JP17379287 A JP 17379287A JP 17379287 A JP17379287 A JP 17379287A JP S6418242 A JPS6418242 A JP S6418242A
Authority
JP
Japan
Prior art keywords
film
silicon oxide
oxide film
flattened
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17379287A
Other languages
Japanese (ja)
Inventor
Sadayuki Imanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP17379287A priority Critical patent/JPS6418242A/en
Publication of JPS6418242A publication Critical patent/JPS6418242A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form a flattened film satisfactorily without causing a cavity by a method wherein a silicon oxide film is formed by a vapor phase growth method on a pattern having a stepped part on a semiconductor substrate, the surface of the grown film is etched by using a mixed solution of ammonium fluoride and hydrofluoric acid and the film is flattened while a temperature is increased to 800-1000 deg.C. CONSTITUTION:A silicon oxide film 3 is formed by a vapor phase growth method on a pattern 2 having stepped parts on a semiconductor substrate 1. After the surface of the grown film 3 has been etched by a mixed solution of ammonium fluoride and hydrofluoric acid, the film 3 is flattened while a temperature is increased within a range of 800-1000 deg.C. By this setup, it is possible to prevent a cavity in the silicon oxide film which is caused because a step coverage of the silicon oxide film 3 is worsened due to the miniaturization of the pattern; it is possible to flatten an insulating film stably and satisfactorily.
JP17379287A 1987-07-14 1987-07-14 Manufacture of semiconductor device Pending JPS6418242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17379287A JPS6418242A (en) 1987-07-14 1987-07-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17379287A JPS6418242A (en) 1987-07-14 1987-07-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6418242A true JPS6418242A (en) 1989-01-23

Family

ID=15967240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17379287A Pending JPS6418242A (en) 1987-07-14 1987-07-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6418242A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02294053A (en) * 1989-05-08 1990-12-05 Sony Corp Formation of flattened film
US8771073B2 (en) 2007-08-23 2014-07-08 Funky Moves Ltd Interactive sporting apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02294053A (en) * 1989-05-08 1990-12-05 Sony Corp Formation of flattened film
US8771073B2 (en) 2007-08-23 2014-07-08 Funky Moves Ltd Interactive sporting apparatus

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